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    Text: Preliminary Datasheet RJK03P6DPA MOS1 30 V, 15 A, 9.4 mΩ max. MOS2 30 V, 45 A, 2.4 mΩ max. Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0905EJ0110 Rev.1.10 Nov 01, 2012 Features •     Low on-resistance Capable of 4.5 V gate drive


    Original     		PDF RJK03P6DPA R07DS0905EJ0110 PWSN0008DD-B