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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet 2SC5509 NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04 FEATURES • • • • • <R> Ideal for medium output power amplification


    Original     		PDF 2SC5509 R09DS0056EJ0300 2SC5509-A 2SC5509-T2 2SC5509-T2-A

    Untitled

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Preliminary 2SC5509 / NE663M04 Data Sheet NPN SILICON RF TRANSISTOR R09DS0056EJ0300 Rev.3.00 Mar 5, 2013 FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M04


    Original     		PDF 2SC5509 NE663M04 R09DS0056EJ0300 2SC5509 2SC5509-A 2SC5509-T2 2SC5509-T R09DS0056EJ0300