NSCSANN100PGUNV
Abstract: 1200 RTV spirometer 100MD
Text: TruStability Board Mount Pressure Sensors: NSC Series– Uncompensated/Unamplified DESCRIPTION The TruStability NSC Series-Uncompensated/Unamplified is a piezoresistive silicon pressure sensor offering a ratiometric analog output for reading pressure over the specified full scale
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008221-1-EN
NSCSANN100PGUNV
1200 RTV
spirometer
100MD
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Untitled
Abstract: No abstract text available
Text: 2 #4-40 UNC Jackscrews installed 53.04±0.38 Shell- Steel, Nickel plated 47.04±0.25 Insulator- High Temp Thermoplastic UL 94V-0,color black 9.0 38.38±0.25 Contact Material: Socket- Phosphor Bronze 13 1 Contact Plating Options: 7.90 25 2.84 14 3.18±0.25
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Voltage500V
Resistance13
Temperature-55
K11XHT-B25S-NJ
K11XHT-B25S-NJ15
K11XHT-B25S-NJ30
LR78160
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Untitled
Abstract: No abstract text available
Text: 2 #4-40 UNC Riveted Threaded Insert 53.04±0.38 Shell- Steel, Nickel plated 47.04±0.25 Insulator- High Temp Thermoplastic UL 94V-0,color black 9.0 38.38±0.25 Contact Material: Socket- Phosphor Bronze 13 1 Contact Plating Options: 7.90 25 2.84 14 3.18±0.25
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Voltage500V
Resistance13
Temperature-55
K11XHT-B25S-N
K11XHT-B25S-N15
K11XHT-B25S-N30
LR78160
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Untitled
Abstract: No abstract text available
Text: #4-40 Riveted Threaded Inserts Shell- Steel, Nickel plated 30.81±0.38 5.9 24.99±0.25 Insulator- High Temp Thermoplastic UL 94V-0,color black 9.0 16.92±0.25 Contact Material: Plug- Brass 1 5 8.36 Contact Plating Options: 2.84 12.55±0.25 30 Option- .000030" gold
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Voltage500V
Resistance13
Temperature-55
K11XHT-E9P-N
K11XHT-E9P-N15
K11XHT-E9P-N30
LR78160
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PDF
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Untitled
Abstract: No abstract text available
Text: #4-40 Riveted Threaded Inserts 30.81±0.38 5.9 24.99±0.25 Shell- Steel, zinc plated or tin plated 9.0 Insulator- PBT, 30% glassfiber reinforced UL 94V-0,color black 16.92±0.25 1 Contact Material: Plug- Brass 5 8.36 2.84 12.55±0.25 Contact Plating Options:
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00076mm]
00038mm]
Resistance13milliohm
K11X-E9P-N
K11X-E9P-N15
K11X-E9P-N30
Temperature-55
LR78160
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400MG
Abstract: "pressure sensor" Honeywell Silicon Pressure Sensor
Text: TruStability Board Mount Pressure Sensors: NSC Series– Uncompensated/Unamplified DESCRIPTION The TruStability NSC Series-Uncompensated/Unamplified is a piezoresistive silicon pressure sensor offering a ratiometric analog output for reading pressure over the specified full scale
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Original
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008221-1-EN
400MG
"pressure sensor"
Honeywell Silicon Pressure Sensor
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet MPC5200 Rev. 4, 01/2005 MPC5200 Data Sheet NOTE The information in this document is subject to change. For the latest data on the MPC5200, visit www.freescale.com and proceed to the MPC5200 Product Summary Page. 1 Overview
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MPC5200
MPC5200
MPC5200,
MPC603e
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13001 H
Abstract: 5VDC Telecom relay AXICOM V23026 AXICOM V23026-D1021-B201 AXICOM Relay V23026-C1052
Text: Signal Relays Axicom P1 Relay V23026 n Directly triggerable with TTL standard modules as ALS, HCT & ACT line 13.5x7.85mm 0.531x0.309” n Switching current 1 A n Bifurcated 1 form C (CO) contact n Immersion cleanable AXICOM n High sensitivity results in low nominal
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V23026
531x0
130mW
150mW
V23026
2/10s)
GR-1089
10/160s)
equip3774-5
13001 H
5VDC Telecom relay
AXICOM V23026
AXICOM V23026-D1021-B201
AXICOM Relay
V23026-C1052
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RAS 0510 SUN HOLD
Abstract: sun hold RAS 0510 SIRBA TCR513 MGT5100 bosch AL 1115 CV IBM lcd monitor circuit diagram free 004C 020C 24U02
Text: MGT5100 User Manual G2 Communications Microcontroller Order Number: MGT5100UM/D Revision 0, April 2002 This document contains information on a new product under development by Motorola. Motorola reserves the right to change or discontinue this product without notice.
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MGT5100
MGT5100UM/D
RAS 0510 SUN HOLD
sun hold RAS 0510
SIRBA
TCR513
bosch AL 1115 CV
IBM lcd monitor circuit diagram free
004C
020C
24U02
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Untitled
Abstract: No abstract text available
Text: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20
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SUP/SUB65P06-20
T0-220AB
O-263
SUP65P06-20
SUB65P06-20
T0-220AB
O-263)
O-263
P-39628--Rev.
28-Dec-94
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SI9950DY
Abstract: Si9950
Text: IF Siliconix SÌ9950DY A M e m b e r o f th e T e m ic G ro u p Complimentary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel r DS(on) (Q) Id (A) 0.3 @ V GS = 10 V ± 2.0 1.0 @ V GS = 5 V ± 1.2 50 u v+ v+ SO-16 GND OUTPUT OUTPUT P-GATE OUTPUT OUTPUT
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9950DY
SO-16
AA07448--Rev.
SI9950DY
Si9950
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Untitled
Abstract: No abstract text available
Text: B U R R -B R O W N | b e IS0130 = » | High IMR, Low Cost ISOLATION AMPLIFIER FEATURES APPLICATIONS • • MOTOR AND SCR CONTROL HIGH ISOLATION-MODE REJECTIONS OkV/ is (min • MOTOR PHASE CURRENT SENSING • LARGE SIGNAL BANDWIDTH: 85kHz (typ) • • INDUSTRIAL PROCESS CONTROL:
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OCR Scan
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IS0130
85kHz
UL1577,
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Untitled
Abstract: No abstract text available
Text: Tem ic Si9426DY Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) 20 r DS(on) (£2) I d (A) 0.0135 @ VGs = 4.5 V ±10 0.0160 @ VGs = 2.5 V ±9.3 i D Q SO-8 6 s N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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OCR Scan
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Si9426DY
S-49532â
02-Feb-98
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Untitled
Abstract: No abstract text available
Text: Tem ic Si4431DY Semiconductors P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) r DS(on) (£2) 30 Id (A) 0.040 @VGs = -10 V ±5.8 0.070 @ VGs = -4.5 V ±4.5 s s s SO-8 D D D D P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)
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Si4431DY
S-49534â
06-Oct-97
DD17flflT
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iran
Abstract: SMP40N10 b0606 D5040
Text: T e m ic SiHconix_ SMP40N10 N-Channel Enhancement-Mode Transistor Product Summary V ISR I)SS (V) 100 I d (A) 40 ;r DS(onj (£2) 0.040 TO-22ÜAB o DRAIN connected to TAB o GD S Top View s N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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SMP40N10
O-220AB
P-36665â
iran
SMP40N10
b0606
D5040
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Untitled
Abstract: No abstract text available
Text: AN ALO G D E V IC E S □ FEATURES Update Rates to 125MHz Low Glitch Energy Complete Composite Inputs On-Chip Reference Voltage Single -S.2V Power Supply Monolithic Video D/A Converter AD9700 AD9700 FUNCTIONAL BLOCK DIAGRAM APPLICATIONS Raster Scan Displays
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125MHz
AD9700
AD9700
125MHz.
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mercury-wetted reed relay
Abstract: No abstract text available
Text: SIP SERIES REED RELAYS SIL4 - DSS4 • MVS4 • MSS4 SRC Devices offers a large selection of molded SIP relays to meet customer applications. The DSS4 was developed several years ago and continues to be the relay of choice for hook switch applications in modems and
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dual diode TO254AA 600V
Abstract: No abstract text available
Text: OM 1N100SA OM 5N100SA OM1N100ST QM 3N100SA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V. Up To 6 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • • Isolated Hermetic Metal Package
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1N100SA
5N100SA
OM1N100ST
3N100SA
MIL-19500,
10secs.
O-257AA
O-254AA
205Crawtord
dual diode TO254AA 600V
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Untitled
Abstract: No abstract text available
Text: 1 mLttM PACKARD W h ü H E W L E T T NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Surface Mount Package • Operates Over a Wide Range SOT-343 SC-70 Features • • • • of Voltages and Frequencies +25.0 dBm PldB and 60 % Collector Efficiency @
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AT-38043
OT-343
SC-70)
5966-1275E
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Untitled
Abstract: No abstract text available
Text: U S ilic o n ix SÌ9410DY A M e m b e r o f th e T e m ic G ro u p N-Channel Enhancement-Mode MOSFET Product Summary Vds r DS on Id (V) (Q ) (A) 0.03 @ V GS = 10 V ±7.0 0.05 @ V GS = 4.5 V ±5.4 30 uu D D D D SO-8 <Jt n s s N -Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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9410DY
AA07450--
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Untitled
Abstract: No abstract text available
Text: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View
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2N7086
O-257AB
P-37012--Rev.
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FDS 4800
Abstract: No abstract text available
Text: Tem ic SUP/SUB75N06-08 S e m i c o n d u c t o r s N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V ) r DS(on) (£2) I d (A ) 60 0.008 75a D O T O -220A B o T O -263 r 1 Jl DRAIN connected to TAB G D S Top View G D S o s SUB75N06-08 Top View
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SUP/SUB75N06-08
-220A
SUP75N06-08
SUB75N06-08
O-263)
S-47969--Rev.
08-M-96
FDS 4800
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Untitled
Abstract: No abstract text available
Text: Tem ic Si4936DY Semiconductors Dual N-Channel 30-V D-S Rated MOSFET Product Sum m ary V D S (V ) r DS(on) (£2) I d (A ) 0.037 @ V Gs = 10 V ± 5 .8 0.055 @ V Gs = 4.5 V ± 4 .7 30 Di D i Q Q D2 D2 O O 6 Si 6 S2 SO -8 |X IX S2 X XI °i X 1 °i XI d2 G2 | 4
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Si4936DY
S-49532â
02-Feb-98
S2SM735
DD17flflT
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PDF
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Untitled
Abstract: No abstract text available
Text: Temic Si4953DY Semiconductors Dual P-Channel 30-V D-S Rated MOSFET Product Sum m ary VDS(V) 30 r DS(on) (£2) I d (A) 0.053 @ VGs = -10 V ±4.9 0.095 @ VGs = -4.5 V ±3.6 s2 9 Si o SO-8 6 Di 6 Di P-Channel MOSFET 6 6 d2 d2 P-Channel MOSFET Absolute M axim um Ratings (Ta = 25 °C Unless Otherwise Noted)
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Si4953DY
S-49534â
06-Oct-97
DD17flflT
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PDF
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