RFB18N10CSHM Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: RFB18N10CSHM Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ	Original	PDF	RFB18N10CSHM
F18N10CS Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking Text: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl	OCR Scan	PDF	43GE271 RFB18N10CS/ 1810CS01 RFB18N10CS, RFB18N10CSVM, RFB18N10CSHM AN7254 AN7260. FB78N70CS, T-39-90 F18N10CS n713 18N10CS f18n10 RFB18N10CSVM Harris top marking

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: RFB18N10CSHM Transistors N-Channel Enhanc. MOSFET w/ Current Sensing V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)18# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)56# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ

Original

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RFB18N10CSHM

F18N10CS

Abstract: n713 18N10CS f18n10 RFB18N10CSVM Harris top marking
Text: HARRIS SbE D 43GE271 □ 0 4 2 2 1 b August 1991 Features TDM « H A S RFB18N10CS/ CSVM/CSHM Current Sensing N-Channel Enhancement-Mode Power Field-Effect Transistor S E M C O N D SECTOR • p s s - q o Package • 18 A, 100V T S -0 0 1 5 LEAD TOP VIEW • rD S (O N ). ° - 1 fl

OCR Scan

PDF

43GE271 RFB18N10CS/ 1810CS01 RFB18N10CS, RFB18N10CSVM, RFB18N10CSHM AN7254 AN7260. FB78N70CS, T-39-90 F18N10CS n713 18N10CS f18n10 RFB18N10CSVM Harris top marking