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    RFD15P06SM9A Price and Stock

    Fairchild Semiconductor Corporation RFD15P06SM 9A

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    Bristol Electronics RFD15P06SM 9A 286
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    Fairchild Semiconductor Corporation RFD15P06SM9A

    TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,15A I(D),TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFD15P06SM9A 228
    • 1 $3.339
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    • 100 $2.226
    • 1000 $2.0591
    • 10000 $2.0591
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    RFD15P06SM9A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD15P06SM9A Fairchild Semiconductor 15A, 60V, 0.150 Ohm, P-Channel Power MOSFET Original PDF
    RFD15P06SM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RFD15P06SM9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    F15P06

    Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
    Text: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 60V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve


    Original
    PDF RFD15P06, RFD15P06SM, RFP15P06 TA09833. TB334 F15P06 RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334

    F15P06

    Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 TB334
    Text: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet January 2002 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives


    Original
    PDF RFD15P06, RFD15P06SM, RFP15P06 TA09833. F15P06 RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 TB334

    F15P06

    Abstract: RFD15P06 RFD15P06SM RFD15P06SM9A RFP15P06 f15p
    Text: RFD15P06, RFD15P06SM, RFP15P06 S E M I C O N D U C T O R 15A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 60V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model


    Original
    PDF RFD15P06, RFD15P06SM, RFP15P06 O-220AB O-251AA RFP15P06 1e-30 15e-4 F15P06 RFD15P06 RFD15P06SM RFD15P06SM9A f15p

    F15P06

    Abstract: RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334
    Text: RFD15P06, RFD15P06SM, RFP15P06 Data Sheet Title FD1 06, D15 6S P15 6 bt A, V, 50 m, anwer OSTs) utho eyrds ter- July 1999 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs Features These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature


    Original
    PDF RFD15P06, RFD15P06SM, RFP15P06 TA09833. F15P06 RFD15P06SM9A RFD15P06 RFD15P06SM RFP15P06 TB334

    Untitled

    Abstract: No abstract text available
    Text: * f* 3 2 S RFD15P06, RFD15P06SM, RFP15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Description Features 15A, 60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­


    OCR Scan
    PDF RFD15P06, RFD15P06SM, RFP15P06 0-150S2 285e-12 1e-30 15e-4 47e-3 37e-5)

    f15p06

    Abstract: TA09833 15A60 15A60V
    Text: in te r r ii RFD15P06, RFD15P06SM, RFP15P06 Data S h e e t J u ly 1999 Features 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs • 15A.60V These P-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives


    OCR Scan
    PDF RFD15P06, RFD15P06SM, RFP15P06 TA09833. 0-150Q RFP15P06 AN7254 AN7260. f15p06 TA09833 15A60 15A60V