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    RFM12N Search Results

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    RFM12N Price and Stock

    Baumer Electric Ag IRFM12N13G3/L

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    Bristol Electronics IRFM12N13G3/L 1
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    Harris Semiconductor RFM12N40

    POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 400V, 0.5OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA
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    Quest Components RFM12N40 41
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    Harris Semiconductor RFM12N10

    12A, 100V, 0.2ohm, N-Channel, POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFM12N10 21 1
    • 1 $1.04
    • 10 $1.04
    • 100 $0.9776
    • 1000 $0.884
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    RFM12N Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFM12N08 Intersil 12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs Original PDF
    RFM12N08 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A. Scan PDF
    RFM12N08 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N08 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM12N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM12N08L General Electric N-channel logic level power field-effect transistor (LL FET). 80V, 12A. Scan PDF
    RFM12N08L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N08L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N10 Intersil 12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs Original PDF
    RFM12N10 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A. Scan PDF
    RFM12N10 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N10 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM12N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM12N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM12N10L General Electric N-channel logic level power field-effect transistor (LL FET). 100V, 12A. Scan PDF
    RFM12N10L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N10L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N18 Intersil 12A, 180V and 200V, 0.250 ?, N-Channel Power MOSFETs Original PDF

    RFM12N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: RFM12N35 RFM12N40
    Text: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,


    Original     		PDF RFM12 RFM12N35, RFM12N40 AN7254 RFM12N35 RFM12N40

    cgs resistor

    Abstract: RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig
    Text: RFM12N08, RFM12N10, RFP12N08, RFP12N10 Semiconductor Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs [ /Title RFM12 These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such N08, RFM12 as switching regulators, switching converters, motor drivers,


    Original     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 RFM12 RFP12 TA09594. RFM12N08 cgs resistor RFP12N08 rfm12 ic 6 pin diode n10 RFM12N08 RFM12N10 RFP12N10 TB334 833ig

    RFP12N18

    Abstract: RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12
    Text: [ /Title RFM12 N18, RFM12 N20, RFP12N 18, RFP12N 20 /Subject (12A, 180V and 200V, 0.250 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO204AA, TO220AB) /Creator () /DOCIN RFM12N18, RFM12N20, RFP12N18, RFP12N20


    Original     		PDF RFM12 RFP12N O204AA, O220AB) RFM12N18, RFM12N20, RFP12N18, RFP12N20 RFP12N18 RFP12N20 "Harris Corporation 1998" AN7254 RFM12N18 RFM12N20 TB334 RFM12

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    12n08

    Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
    Text: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92CS-3374I RFM12N08 RFM12N10 RFP1I2N08 RFM12N18, 12n08 rca application notes pt 4115 TA9284 AN7260 AN7254 RFP12N08

    f12n10l

    Abstract: f12N08L F12N08L FET RFP12N08L RFP12N10L f12n10 RFM12N08L f12n08 f12n "Voltage to Current Converter"
    Text: Logic-Level Power MOSFETs F ile N u m b e r IN RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 151 N-Channel Logic Level Power Field-Effect Transistors L2 FET 12 A, 80 V and 100 V rD s(on ): 0.2 O Features: • Design optim ized for 5 volt gate drive ■ Can be driven dire ctly from Q-MOS, N-MOS, TTL C ircuits


    OCR Scan     		PDF RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L 92CS-33741 RFM12N08L RFM12N10L RFP12N08L RFP12N10L* l92CS-37213 f12n10l f12N08L F12N08L FET f12n10 f12n08 f12n "Voltage to Current Converter"

    f12n10l

    Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
    Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L


    OCR Scan     		PDF 01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"

    Untitled

    Abstract: No abstract text available
    Text: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 TB334 AN7254 AN7260.

    RFP12N08

    Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10
    Text: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,| 3Ô 7 S Ü Û 1 DOlfllSB 1 | _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode


    OCR Scan     		PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92cs-33t4i RFM12N08 RFM12N10 RFP12N08 RFP12N10 l3fl750fll TA9284

    RFP12N20

    Abstract: RFP12N18 RFM12N18 RFM12N20
    Text: ^01 DE I 3fl7SGfll OOiaiiS? =1 3875081 G E S O L I D S T A T E 01E 18157 D Standard Power MOSFETs-:- - RFM12N18, RFM12N20, RFP12N18, RFP12N20 File N u m b e r


    OCR Scan     		PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 92cs-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20*

    RFM12N40

    Abstract: RFM12 B RFM12N35
    Text: Standard Power MOSFETs — RFM12N35, RFM12N40 File Number 1787 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 350 V - 4 0 0 V N-CHANNEL ENHANCEMENT MODE rDs on = 0 .5 O Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF RFM12N35, RFM12N40 RFM12N35 RFM12N40* AN-7254 AN-7260. 92cs-37236 92cs-37237 92cs-37238 92cs-37239 RFM12N40 RFM12 B

    Untitled

    Abstract: No abstract text available
    Text: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 250S2 TB334 TA09293. 75BVnss 75BVncc 50BVd

    RFP12N18

    Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20
    Text: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds


    OCR Scan     		PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 92CS-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20* RFP12N20 RFP12M20 RFP mosfets

    F12N08L FET

    Abstract: F12N10 12N08l
    Text: 13 0 2 27 1 a0S17t,M TSt " H A S . . . . RFM12N08L/1OL RFP12N08L/10L H a r r is N -Chan nel Logic Level Power Field-Effect Transistors L 2 FET August 1991 Package Features TO-204AA BOTTOM VIEW • 12A, 80V and 100V • rDS(ON) = 0 2 n SOURCE f • Design Optimized for 5V Gate Drives


    OCR Scan     		PDF a0S17t RFM12N08L/1OL RFP12N08L/10L O-204AA RFM12N08L RFM12N10L 92CS-372I6 92CS-572I7 92CS-372I8 F12N08L FET F12N10 12N08l

    buz11

    Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
    Text: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12


    OCR Scan     		PDF T0-204 O-205 O-218 O-220 RFM15N05 RFM25N05 RFK45N05 RFL2N05 RFH45N05 RFP4N05 buz11 BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    rfp12n18

    Abstract: RFH12N 12N35
    Text: ^ RFH12N3 5 RFH12N40 h A R f r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Features Package T O -2 1 8 A C • 12A, 3 5 0 V and 4 0 0 V TOP VIEW • ro s o n = 0 .0 3 8 f i • S 0 A is P o w er-D issip atio n Lim ited


    OCR Scan     		PDF RFH12N3 RFH12N40 92CS-37236 92CS-37239 rfp12n18 RFH12N 12N35

    12N18

    Abstract: 1117h
    Text: R FM 12N 18 /1 2N 20 R FP 12N 18/12N 20 HARRIS N-Channel Enhancement Mode Power Field Effect Transistors August 1991 Packages Features T0-204AA • 12A, 180V and 200V • rDS on = 0 .2 5 Î Î f SOURCE • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds


    OCR Scan     		PDF 18/12N T0-204AA RFM12N18 RFM12N20 RFP12N18 RFP12N20 12N18 1117h

    rfp12n10

    Abstract: No abstract text available
    Text: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni


    OCR Scan     		PDF 00S11G0 PCF12N10W jF12N1 Mil-Std-750, IRF120 IRF520 IRFR120 IRFF120 RFM12N10 RFP12N10 rfp12n10

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


    OCR Scan     		PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    field-effect transistors

    Abstract: 05LSM RFP8N18L RFP25N06L transistors 2N6904 field-effect transistor RFP14N05L M 615 transistor transistor 684
    Text: _ POWER MOSFETs 6 L O G IC L E V E L P O W E R M O S F E T s PAGE 2N6901 N-Channel Logic Level Power MOS Field-Effect Transistor L2F E T . 6-3 2N6902 N-Channel Logic Level Power MOS Field-Effect Transistor (L2F E T ) .


    OCR Scan     		PDF 2N6901 2N6902 2N6903 2N6904 RFL1N08L, RFL1N10L RFL1N12L, RFL1N15L RFL1N18L, RFL1N20L field-effect transistors 05LSM RFP8N18L RFP25N06L transistors field-effect transistor RFP14N05L M 615 transistor transistor 684