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    RJ 22 DIODE Search Results

    RJ 22 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RJ 22 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode rj

    Abstract: RJ 22 diode
    Text: SK35DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JZ; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JZ;P C F <J%,+A .5 P @ +' =¥ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +


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    PDF SK35DGDL12T4 diode rj RJ 22 diode

    Untitled

    Abstract: No abstract text available
    Text: SK25DGDL12T4 T CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter,Chopper OJ:9 <J <JY; OH:9 =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 =' P BQ UVSW RJ <JY;P C F <J%,+A .5 P @ +' =[ Diode - Inverter,Chopper SEMITOP 4 3-phase bridge rectifier +


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    PDF SK25DGDL12T4

    diode marking code RJ

    Abstract: No abstract text available
    Text: SDA06WS SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 RJ Top View Marking Code: "RJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC


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    PDF SDA06WS OD-323 OD-323 diode marking code RJ

    S11 SCHOTTKY diode

    Abstract: Avago Technologies Schottky diode ADS model rf detector diode low power LSSP ADS 10 diode HSMS2865 k 2865 EEsof Circuit Components for Manual for ADS B-286
    Text: Diode Detector Simulation using Avago Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Avago Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against


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    PDF HSMS-2865, 5968-1885E S11 SCHOTTKY diode Avago Technologies Schottky diode ADS model rf detector diode low power LSSP ADS 10 diode HSMS2865 k 2865 EEsof Circuit Components for Manual for ADS B-286

    diode hp 2800

    Abstract: hp 2800 diode hp diode 2800 diode rj 93 5082-2824 DIODE 2800 hp 5082-2800 diode
    Text: Square Law and Linear Detection Application Note 986 100 Introduction Above about -10 dBm the slope is closer to linear but may vary about 30% for different values of frequency, diode capacitance, and load resistance. The slope may be controlled by tuning at the proper power


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    PDF

    ADS 10 diode

    Abstract: S11 SCHOTTKY diode LSSP diode ADS model rf detector diode low power pn junction diode H286 b286DIE pn junction diode ideality factor HSMS-2865
    Text: Diode Detector Simulation using Agilent Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Agilent Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against temperature.


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    PDF HSMS-2865, 5968-1885E ADS 10 diode S11 SCHOTTKY diode LSSP diode ADS model rf detector diode low power pn junction diode H286 b286DIE pn junction diode ideality factor HSMS-2865

    ADS 10 diode

    Abstract: diode ADS model S11 SCHOTTKY diode LSSP pn junction diode HSMS-2665 EESof b286DIE h286 die 5968-1885E
    Text: Diode Detector Simulation using Hewlett-Packard EESOF ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Hewlett-Packard EESOF ADS software package can be used to simulate a diode detector circuit reliably against temperature.


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    PDF HSMS-2865, 5968-1885E ADS 10 diode diode ADS model S11 SCHOTTKY diode LSSP pn junction diode HSMS-2665 EESof b286DIE h286 die 5968-1885E

    Airpax 5003

    Abstract: Airpax 5024 zero bias schottky diode detector Thermostat Airpax Series 5003 transformer 5024 5966-0784E Airpax HSMS-2850 HSMS-2860 bimetal temperature control airpax 5003
    Text: The Zero Bias Schottky Diode Detector at Temperature Extremes – Problems and Solutions Application Note 1090 Abstract Introduction The zero bias Schottky diode detector [1], [2] is widely used in RF/ ID and other applications where no primary DC power is available in the standby or “listen”


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    PDF 5966-0784E Airpax 5003 Airpax 5024 zero bias schottky diode detector Thermostat Airpax Series 5003 transformer 5024 5966-0784E Airpax HSMS-2850 HSMS-2860 bimetal temperature control airpax 5003

    Airpax 5003

    Abstract: Airpax 5024 HSMS-2850 Thermostat Airpax Series 5003 Airpax HSMS-2860 Airpax Series 5003
    Text: The Zero Bias Schottky Diode Detector at Temperature Extremes – Problems and Solutions Application Note 1090 Abstract Introduction The zero bias Schottky diode detector [1], [2] is widely used in RF/ ID and other applications where no primary DC power is available in the standby or “listen”


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    PDF L-644 5966-0784E Airpax 5003 Airpax 5024 HSMS-2850 Thermostat Airpax Series 5003 Airpax HSMS-2860 Airpax Series 5003

    Airpax 5003

    Abstract: Airpax 5024 Thermostat Airpax Series 5003 bimetal temperature control airpax 5003 Airpax Series 5003 HSMS-2850 HSMS-2860 equivalent zero bias schottky diode detector ghz detector Airpax
    Text: The Zero Bias Schottky Diode Detector at Temperature Extremes – Problems and Solutions Application Note AN 1090 Abstract The zero bias Schottky diode detector is ideal for RF/ID tag applications where it can be used to fabricate a receiver which consumes no primary power. However,


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    a913

    Abstract: A912 Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913
    Text: Silicon Switching Diodes BAS 78 A … BAS 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 78 A BAS 78 B BAS 78 C BAS 78 D Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913


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    PDF Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913 OT-223 a913 A912 Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913

    Untitled

    Abstract: No abstract text available
    Text: SK50DGDL12T4T CONVERTER, INVERTER, BRAKE =' P BQ RJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions Values Units IGBT - Inverter.For IGBT chopper maximum ratings, please refer to SK35DGDL12T4T OJ:9 <J <JY; OH:9 =' P BQ UVSW RJ <JY;P C F <J%,+A .5 P @ +'


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    PDF SK50DGDL12T4T SK35DGDL12T4T

    MA40416-1010

    Abstract: MA40404-119 MA40400 Ka Band Mixer mixer diodes MA40415 MA40419-1108 MA40403 MA40404 MA40408
    Text: GaAs Schottky Mixer Diodes MA40400 Series V3.00 Features ● ● ● ● ● ● ● Case Styles Very Low Noise Figure from X through W-Band Low Junction Capacitance Low Series Resistance Wide Range of Available Product – Packaged Diodes – Chips – Beam Leads


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    PDF MA40400 MA40416-1010 MA40404-119 Ka Band Mixer mixer diodes MA40415 MA40419-1108 MA40403 MA40404 MA40408

    W-band diode

    Abstract: MA4AGBPL912 Microwave PIN diode MA4AGBLP912 beam lead pin diode MA4AGBLP912 M541 W-band PIN diode SPICE model pin diode model spice
    Text: MA4AGBLP912 AlGaAs Beam Lead PIN Diode Features n n n n n n n V 1.00 Outline Topview Ultra Low Capacitance < 22 fF Excellent RC Product < 0.10 pS High Switching Cutoff Frequency > 110 GHz 5 Nanosecond Switching Speed Driven by Standard +5 V TTL PIN Diode Driver


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    PDF MA4AGBLP912 MA4AGBLP912 pa300 MA4AGBPL912 0E-14 W-band diode Microwave PIN diode MA4AGBLP912 beam lead pin diode M541 W-band PIN diode SPICE model pin diode model spice

    AN-957

    Abstract: circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
    Text: Applications of PIN Diodes Application Note 922 Introduction Characteristics of the PIN Diode The most important property of the PIN diode is the fact that it can, under certain circumstances, behave as an almost pure resistance at RF frequencies, with a resistance


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    PDF have5771-26 5965-8666E AN-957 circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005

    AVAGO MARKING E4

    Abstract: AN1124 381B HSMP3810 HSMP4810 MARKING E4 "Pin Diode" e4 b09
    Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and


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    PDF HSMP-381x, HSMP-381x HSMP-481x OT-23 OT-323 OT-323 SC70-3 OT-363 SC70-6 AV01-0378EN AVAGO MARKING E4 AN1124 381B HSMP3810 HSMP4810 MARKING E4 "Pin Diode" e4 b09

    Untitled

    Abstract: No abstract text available
    Text: r n “ THSTSBOSSirBTJilPUKEHEE- IE RELEASED FM NJ6LI6ATI6N COPTRCHT - _ BY TYCO ELECTRONCS CORPORATOR 01ST ALL ROUTS RESERVED. M REVISIONS 22 B MECHANICAL: A MAX A I— u I 0 .5 5 5 0 .6 0 0 MAX r uT Pin Designations r / - A 70 c_ I 00 RJ— 1 LED1 •


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    PDF C26800 100jalNCH 50jxlNCH 0BMM200S 09IMR2005 1000pF, 51MAR2000

    TCA420A

    Abstract: TCA420 TCA530 TCA420A circuit diagram voltage stabilizer, circuit diagram TCA530 circuit diagram
    Text: TCA530 J V _ INTEGRATED VOLTAGE STABILIZER The TCA530 is an adjustable 30 V integrated circuit voltage stabilizer for use w ith variable capacitance diodes. The circuit features: continuous short-circuit protected output, a.f.c. control voltage input, internal


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    PDF TCA530 TCA530 v6-16 av6-16 TCA420A. TCA420A TCA420 TCA420A circuit diagram voltage stabilizer, circuit diagram TCA530 circuit diagram

    TCA530

    Abstract: AT AV6 voltage stabilizer, circuit diagram tca 530 TCA530 circuit diagram
    Text: TCA530 J V_ INTEGRATED VOLTAGE STABILIZER The TC A 53 0 is an adjustable 30 V integrated c irc u it voltage stabilizer fo r use w ith variable capacitance diodes. The c irc u it features: continuous s h o rt-c irc u it protected o u tp u t, a.f.c. c o n tro l voltage inpu t, internal


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    PDF TCA530 TCA530 AT AV6 voltage stabilizer, circuit diagram tca 530 TCA530 circuit diagram

    MA40420

    Abstract: schottky diodes Anti parallel
    Text: MA40401/MA40422 Series GaAs Schottky Mixer Diodes Features • VERY LOW NOISE FIGURE X, W-BAND ■ LOW JUNCTION CAPACITANCE ■ LOW SERIES RESISTANCE ■ WIDE RANGE OF AVAILABLE PRODUCT Description This family of Gallium Arsenide Schottky diodes is fabri­


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    PDF MA40401/MA40422 MA40420 schottky diodes Anti parallel

    AEG T 308 f

    Abstract: No abstract text available
    Text: A E G CORP 17E D OOSTHBb QQOTTl? 3 • BZT 03/D. TElLllFyMKilNl electronic Creative Technologies Silicon Z-Diodes r - I I - I f f Applications: Medium power voltage regulators, and medium power transient suppression circuits Features: Clamping time in picoseconds


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    PDF pS100 BZT03/D. flthJAS100K/W AEG T 308 f

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2-Phase Stepper-Motor Driver TLE 4726 Overview Bipolar 1C Features • 2 x 0.75 A / 50 V outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Low standby-current drain • Full, half, quarter, mini step


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    PDF 067006-A9297 P-DSO-24-3 P-DS0-24-3 GPS05144

    DIODE AA 119

    Abstract: No abstract text available
    Text: a n A M P co m p a n y GaAs Schottky Mixer Diodes MA40400 Series V3.00 Features Case Styles • • • • Very Low Noise Figure from X through W-Band Low Junction Capacitance Low Series Resistance Wide Range of Available Product - Packaged Diodes - Chips


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    PDF MA40400 DIODE AA 119

    Untitled

    Abstract: No abstract text available
    Text: Am29861 - 64 High Performance Bus Transceivers DISTINCTIVE CHARACTERISTICS High-speed symmetrical bidirectional transceivers - Noninverting tpp = 5.0ns typ - Inverting tpo = 4.5ns typ 200mV minimum input hysteresis on input data ports Three-state outputs glitch-free during power-up and


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    PDF Am29861 200mV Am29860 Am29863/64 300pF 03369B wf001470 wf001450