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    RJK03B Search Results

    RJK03B Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK03B7DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET, WPAK(3F), /Embossed Tape Visit Renesas Electronics Corporation
    RJK03B8DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK03B9DPA-00#J5A Renesas Electronics Corporation N Channel Power MOSFET, WPAK(3F), /Embossed Tape Visit Renesas Electronics Corporation
    RJK03B9DPA-00#J53 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
    RJK03B8DPA-00#J53 Renesas Electronics Corporation N Channel Power MOSFET Visit Renesas Electronics Corporation
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    RJK03B Price and Stock

    Rochester Electronics LLC RJK03B9DNS-00-J5

    N-CHANNEL POWER MOSFET
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    DigiKey RJK03B9DNS-00-J5 Bulk 625
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    Rochester Electronics LLC RJK03B9DPA-0T-J53

    N-CHANNEL POWER MOSFET
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    DigiKey RJK03B9DPA-0T-J53 Bulk 541
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    Rochester Electronics LLC RJK03B8DPA-WS-J53

    N-CHANNEL POWER MOSFET
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    DigiKey RJK03B8DPA-WS-J53 Bulk 541
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    Rochester Electronics LLC RJK03B7DPA-WS-J53

    N-CHANNEL POWER MOSFET
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    DigiKey RJK03B7DPA-WS-J53 Bulk 541
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    Rochester Electronics LLC RJK03B8DPA-00-J53

    MOSFET N-CH 30V 30A 8WPAK
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    DigiKey RJK03B8DPA-00-J53 Bulk 541
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    Find more RJK03B price and stock on Findchips.com

    RJK03B Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK03B7DPA Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0077]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1670; toff ( us) typ: -; Package: WPAK Original PDF
    RJK03B7DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A W-PAK Original PDF
    RJK03B8DPA Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0072; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0093]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1330; toff ( us) typ: -; Package: WPAK Original PDF
    RJK03B8DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A 2WPACK Original PDF
    RJK03B9DPA Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : -; RDS (ON) typ. (ohm) @10V: 0.0083; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0109]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1110; toff ( us) typ: -; Package: WPAK Original PDF
    RJK03B9DPA-00#J53 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A W-PAK Original PDF
    RJK03B9DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 30A 2WPACK Original PDF

    RJK03B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B8DPA REJ03G1790-0210 Rev.2.10 May 12, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.2 m typ. (at VGS = 10 V)


    Original     		RJK03B8DPA REJ03G1790-0210 PWSN0008DC-A PDF

    RJK03B9DPA

    Abstract: RJK03B9DPA-00-J53
    Text: RJK03B9DPA Silicon N Channel Power MOS FET Power Switching REJ03G1791-0310 Rev.3.10 Apr 03, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 8.3 mΩ typ. (at VGS = 10 V)


    Original     		RJK03B9DPA REJ03G1791-0310 PWSN0008DA-A RJK03B9DPA RJK03B9DPA-00-J53 PDF

    RJK03B9DPA

    Abstract: RJK03B9DPA-00-J53
    Text: Preliminary Datasheet RJK03B9DPA Silicon N Channel Power MOS FET Power Switching REJ03G1791-0320 Rev.3.20 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 8.3 m typ. (at VGS = 10 V)


    Original     		RJK03B9DPA REJ03G1791-0320 PWSN0008DC-A to9044 RJK03B9DPA RJK03B9DPA-00-J53 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B7DPA 30 V, 30 A, 7.8 m max. N Channel Power MOS FET High Speed Power Switching R07DS0930EJ0300 Previous: REJ03G1789-0210 Rev.3.00 Nov 09, 2012 Features •       High speed switching Capable of 4.5 V gate drive


    Original     		RJK03B7DPA R07DS0930EJ0300 REJ03G1789-0210) PWSN0008DC-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B7DPA REJ03G1789-0210 Rev.2.10 May 12, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.0 m typ. (at VGS = 10 V)


    Original     		RJK03B7DPA REJ03G1789-0210 PWSN0008DC-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B8DPA 30V, 30A, 9.3m max. N Channel Power MOS FET High Speed Power Switching R07DS0931EJ0400 Rev.4.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03B8DPA R07DS0931EJ0400 PWSN0008DE-A PDF

    RJK03B8DPA

    Abstract: RJK03B8DPA-00-J53
    Text: Preliminary Datasheet RJK03B8DPA REJ03G1790-0210 Rev.2.10 May 12, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.2 m typ. (at VGS = 10 V)


    Original     		RJK03B8DPA REJ03G1790-0210 PWSN0008DC-A c9044 RJK03B8DPA RJK03B8DPA-00-J53 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B9DPA Silicon N Channel Power MOS FET Power Switching REJ03G1791-0320 Rev.3.20 May 12, 2010 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 8.3 m typ. (at VGS = 10 V)


    Original     		RJK03B9DPA REJ03G1791-0320 PWSN0008DC-A Channe9044 PDF

    RJK03B8DPA

    Abstract: RJK03B8DPA-00-J53
    Text: RJK03B8DPA Silicon N Channel Power MOS FET Power Switching REJ03G1790-0200 Rev.2.00 Apr 03, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 7.2 mΩ typ. (at VGS = 10 V)


    Original     		RJK03B8DPA REJ03G1790-0200 PWSN0008DA-A RJK03B8DPA RJK03B8DPA-00-J53 PDF

    RJK03B7DPA

    Abstract: RJK03B7DPA-00-J53
    Text: RJK03B7DPA Silicon N Channel Power MOS FET Power Switching REJ03G1789-0200 Rev.2.00 Apr 03, 2009 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.0 mΩ typ. (at VGS = 10 V)


    Original     		RJK03B7DPA REJ03G1789-0200 PWSN0008DA-A RJK03B7DPA RJK03B7DPA-00-J53 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B8DPA 30 V, 30 A, 9.3 m max. N Channel Power MOS FET High Speed Power Switching R07DS0931EJ0300 Previous: REJ03G1790-0210 Rev.3.00 Nov 09, 2012 Features •       High speed switching Capable of 4.5 V gate drive


    Original     		RJK03B8DPA R07DS0931EJ0300 REJ03G1790-0210) PWSN0008DC-B PDF

    RJK03B7DPA

    Abstract: RJK03B7DPA-00-J53 RJK03B
    Text: Preliminary Datasheet RJK03B7DPA REJ03G1789-0210 Rev.2.10 May 12, 2010 Silicon N Channel Power MOS FET Power Switching Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS on = 6.0 m typ. (at VGS = 10 V)


    Original     		RJK03B7DPA REJ03G1789-0210 PWSN0008DC-A c9044 RJK03B7DPA RJK03B7DPA-00-J53 RJK03B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B7DPA 30V, 30A, 7.8m max. N Channel Power MOS FET High Speed Power Switching R07DS0930EJ0400 Rev.4.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03B7DPA R07DS0930EJ0400 PWSN0008DE-A PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03B9DPA 30V, 30A, 10.6m max. N Channel Power MOS FET High Speed Power Switching R07DS0932EJ0500 Rev.5.00 Mar 22, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		RJK03B9DPA R07DS0932EJ0500 PWSN0008DE-A PDF

    RJH60F7

    Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652
    Text: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to


    Original     		RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    HAT1128R

    Abstract: RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB
    Text: April 2010 Renesas Electronics Power MOSFETs for DC/DC Converter – 1 Improving Supply Efficiency by Low Loss Features Low ON resistance, High-speed switching, Low Qg. Applications Merits Improve power supply efficiency for energy saving , Fast response


    Original     		RJK0305DPB RJK0331DPB) HAT2188WP RJK2055DPA RJK2057DPA HAT2191WP HAT2192WP HAT2193WP RJK2555DPA RJK2557DPA HAT1128R RJJ0315DSP HAT1125H RJK0351DPA RJK0380DPA HAT2215R hat1128 hat2215 HAT1054R RJK0329DPB PDF

    RJJ0319DSP

    Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
    Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?


    Original     		R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram PDF

    rjp6065

    Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
    Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance


    Original     		PDF

    rjh60f5

    Abstract: RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK
    Text: Rev.27.01 2010.2.2 Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation www.renesas.com Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors General Presentation January 2010 Standard Product Business Group 2/2/2010 Rev.27.01 2010. Renesas Technology Corp., All rights reserved.


    Original     		REJ13G0003-2701 rjh60f5 RJH60F7 R2J240 R2J24020 HAT2292C HAT2286C HAT1146C RJH60 rjh60d7 RJH60F7ADPK PDF

    RJK03B9DPA

    Abstract: RJK03B9DPA-00-J53
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    R2J24020F

    Abstract: R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114
    Text: 2009.07 ルネサス 電源システム RENESAS Power supply system www.renesas.com 電気に変換されたエネルギーは無駄なく使うことで地球全体 の炭素使用量を減らし地球の温暖化を防ぐことができます。 電気は主に発電所で作られ、高電圧のACで送電されること


    Original     		RJJ01F0008-0201 R2J24020F R2A20117 R2J240 R2J24020 HAT1130r R2A20114 10A triac control PWM battery Charger dimmer diagrams IGBT r2a20104 pfc pwm evaluation board R2A20114 PDF