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    RJK065 Search Results

    RJK065 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0653DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 45A 4.8Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0652DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 35A 7Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0655DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 35A 6.7Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0651DPB-00#J5 Renesas Electronics Corporation Nch Single Power Mosfet 60V 25A 14Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0659DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 60V 30A 8Mohm Wpak Visit Renesas Electronics Corporation
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    RJK065 Price and Stock

    Renesas Electronics Corporation RJK0651DPB-00-J5

    MOSFET N-CH 60V 25A LFPAK
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    DigiKey RJK0651DPB-00-J5 Reel 20,000 2,500
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    RJK0651DPB-00-J5 Cut Tape 2,414 1
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    Renesas Electronics Corporation RJK0658DPA-00-J5A

    MOSFET N-CH 60V 25A 8WPAK
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    DigiKey RJK0658DPA-00-J5A Reel 6,000 3,000
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    RJK0658DPA-00-J5A Cut Tape 1
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    RJK0658DPA-00-J5A Digi-Reel 1
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    Renesas Electronics Corporation RJK0659DPA-00-J5A

    MOSFET N-CH 60V 30A 8WPAK
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    DigiKey RJK0659DPA-00-J5A Reel 6,000 3,000
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    Renesas Electronics Corporation RJK0654DPB-00-J5

    MOSFET N-CH 60V 30A LFPAK
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    DigiKey RJK0654DPB-00-J5 Cut Tape 4,288 1
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    RJK0654DPB-00-J5 Digi-Reel 4,288 1
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    Avnet Americas RJK0654DPB-00-J5 Reel 18 Weeks 2,500
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    Renesas Electronics Corporation RJK0655DPB-00-J5

    MOSFET N-CH 60V 35A LFPAK
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    DigiKey RJK0655DPB-00-J5 Reel 2,500 2,500
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    RJK0655DPB-00-J5 Cut Tape 1
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    RJK0655DPB-00-J5 Digi-Reel 1
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    Avnet Americas RJK0655DPB-00-J5 Reel 18 Weeks 2,500
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    Avnet Asia RJK0655DPB-00-J5 18 Weeks 2,500
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    RJK065 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RJK0651DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A LFPAK Original PDF
    RJK0652DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK Original PDF
    RJK0653DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 45A LFPAK Original PDF
    RJK0654DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V LFPAK Original PDF
    RJK0655DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 35A LFPAK Original PDF
    RJK0656DPB-00#J5 Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 40A LFPAK Original PDF
    RJK0657DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 20A WPAK Original PDF
    RJK0658DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A WPAK Original PDF
    RJK0659DPA-00#J5A Renesas Electronics FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A WPAK Original PDF

    RJK065 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RJK0652DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0652DPB R07DS0077EJ0200 PTZZ0005DA-A RJK0652DPB

    RJK0656DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching REJ03G1882-0100 Rev.1.00 Nov 18, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 4.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0656DPB REJ03G1882-0100 PTZZ0005DA-A RJK0656DPB

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0654DPB 60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching R07DS1052EJ0200 Previous: REJ03G1880-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 6.5 m typ. (at VGS = 10 V)


    Original     		PDF RJK0654DPB R07DS1052EJ0200 REJ03G1880-0100) PTZZ0005DA-A RJK0654DPB

    RJK0659DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0659DPA 60V, 30A, 8.0mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0345EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0659DPA R07DS0345EJ0300 PWSN0008DE-A RJK0659DPA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0651DPB R07DS0076EJ0102 Previous: REJ03G1765-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0651DPB R07DS0076EJ0102 REJ03G1765-0101) PTZZ0005DA-A curr9044

    RJK0653DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0653DPB R07DS0078EJ0102 Previous: REJ03G1760-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 3.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0653DPB R07DS0078EJ0102 REJ03G1760-0101) PTZZ0005DA-A cur9044 RJK0653DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0658DPA R07DS0344EJ0100 PWSN0008DC-B

    RJK0654DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB

    RJK0655DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0655DPB Silicon N Channel Power MOS FET Power Switching REJ03G1881-0100 Rev.1.00 Nov 17, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 5.3 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0655DPB REJ03G1881-0100 PTZZ0005DA-A RJK0655DPB

    RJK0659DPA

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0659DPA R07DS0345EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0659DPA R07DS0345EJ0100 PWSN0008DC-B RJK0659DPA

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0657DPA R07DS0343EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features •    High speed switching Low drive current High density mounting Low on-resistance RDS on = 14 m typ. (at VGS = 10 V)


    Original     		PDF RJK0657DPA R07DS0343EJ0100 PWSN0008DC-B

    RJK0653DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0653DPB 60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching R07DS0078EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 3.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0653DPB R07DS0078EJ0200 PTZZ0005DA-A RJK0653DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0655DPB 60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching R07DS1053EJ0200 Previous: REJ03G1881-0100 Rev.2.00 Apr 09, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V)


    Original     		PDF RJK0655DPB R07DS1053EJ0200 REJ03G1881-0100) PTZZ0005DA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0657DPA R07DS0343EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features •    High speed switching Low drive current High density mounting Low on-resistance RDS on = 14 m typ. (at VGS = 10 V)


    Original     		PDF RJK0657DPA R07DS0343EJ0100 PWSN0008DC-B

    RJK0655DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0655DPB Silicon N Channel Power MOS FET Power Switching REJ03G1881-0100 Rev.1.00 Nov 17, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 5.3 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0655DPB REJ03G1881-0100 PTZZ0005DA-A RJK0655DPB

    RJK0652DPB

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0652DPB R07DS0077EJ0102 Previous: REJ03G1766-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0652DPB R07DS0077EJ0102 REJ03G1766-0101) PTZZ0005DA-A cur9044 RJK0652DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching REJ03G1882-0100 Rev.1.00 Nov 18, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 4.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0656DPB REJ03G1882-0100 PTZZ0005DA-A

    RJK0652

    Abstract: RJK0652DPB RJK06 R07DS0077EJ0102 rjk0652dpb-00-j5 RJK065
    Text: Preliminary Datasheet RJK0652DPB R07DS0077EJ0102 Previous: REJ03G1766-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free


    Original     		PDF RJK0652DPB R07DS0077EJ0102 REJ03G1766-0101) PTZZ0005DA-A Ava9044 RJK0652 RJK0652DPB RJK06 R07DS0077EJ0102 rjk0652dpb-00-j5 RJK065

    RJK0654DPB

    Abstract: RJK0654
    Text: Preliminary RJK0654DPB Silicon N Channel Power MOS FET Power Switching REJ03G1880-0100 Rev.1.00 Nov 16, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 6.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0654DPB REJ03G1880-0100 PTZZ0005DA-A RJK0654DPB RJK0654

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0658DPA R07DS0344EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features • • • • High speed switching Low drive current High density mounting Low on-resistance RDS on = 9.0 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0658DPA R07DS0344EJ0100 PWSN0008DC-B

    RJK0656DPB

    Abstract: No abstract text available
    Text: Preliminary RJK0656DPB Silicon N Channel Power MOS FET Power Switching REJ03G1882-0100 Rev.1.00 Nov 18, 2009 Features • • • • • Pb-free • Halogen-free • High density mounting High speed switching Low drive current Low on-resistance RDS on = 4.5 mΩ typ. (at VGS = 10 V)


    Original     		PDF RJK0656DPB REJ03G1882-0100 PTZZ0005DA-A RJK0656DPB

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0658DPA 60V, 25A, 11.1mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0344EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0658DPA R07DS0344EJ0300 PWSN0008DE-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK0657DPA 60V, 20A, 13.6mΩ max. N Channel Power MOS FET High Speed Power Switching R07DS0343EJ0300 Rev.3.00 Apr 09, 2013 Features •      High speed switching Low drive current High density mounting Low on-resistance


    Original     		PDF RJK0657DPA R07DS0343EJ0300 PWSN0008DE-A