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    RK73H2ATTD10R0F Price and Stock

    KOA Speer Electronics Inc RK73H2ATTD10R0F

    RES 10 OHM 1% 1/4W 0805
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    DigiKey RK73H2ATTD10R0F Cut Tape 324,670 1
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    RK73H2ATTD10R0F Digi-Reel 324,670 1
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    RK73H2ATTD10R0F Reel 324,000 5,000
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    Mouser Electronics RK73H2ATTD10R0F 379,184
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    Verical RK73H2ATTD10R0F 70,000 5,000
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    RK73H2ATTD10R0F 55,000 5,000
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    Arrow Electronics RK73H2ATTD10R0F 70,000 8 Weeks 5,000
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    RK73H2ATTD10R0F 55,000 6 Weeks 5,000
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    RK73H2ATTD10R0F Cut Strips 68 6 Weeks 68
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    Future Electronics RK73H2ATTD10R0F Reel 12 Weeks 25,000
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    Bristol Electronics RK73H2ATTD10R0F 78,645
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    RK73H2ATTD10R0F 22,211
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    RK73H2ATTD10R0F 3,302
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    RK73H2ATTD10R0F 1,800 178
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    Quest Components RK73H2ATTD10R0F 58,492
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    RK73H2ATTD10R0F 32,000
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    RK73H2ATTD10R0F 17,768
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    RK73H2ATTD10R0F 2,993
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    RK73H2ATTD10R0F 2,060
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    RK73H2ATTD10R0F 1,440
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    TTI RK73H2ATTD10R0F Reel 1,245,000 5,000
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    Chip 1 Exchange RK73H2ATTD10R0F 110,000
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    KOA Speer Electronics Inc RK73H2ATTD10R0F.

    Res, 10R, 1%, 0.25W, 0805 Rohs Compliant: Yes |Koa RK73H2ATTD10R0F.
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    Newark RK73H2ATTD10R0F. Cut Tape 1
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    Bristol Electronics RK73H2ATTD10R0F 6,078
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    KOA Speer Electronics Inc RK73H2ATTD10R0FT

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    Bristol Electronics RK73H2ATTD10R0FT 2,500
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    Quest Components RK73H2ATTD10R0FT 2,000
    • 1 $0.0795
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    • 1000 $0.0265
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    . RK73H2ATTD10R0F

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics RK73H2ATTD10R0F 1,982
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    RK73H2ATTD10R0F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RK73H2ATTD10R0F KOA Speer Electronics RES 10-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA ROHS Original PDF

    RK73H2ATTD10R0F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability


    Original
    AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3 PDF

    MD8IC970NR1

    Abstract: GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original
    MD8IC970N MD8IC970NR1 MD8IC970GNR1 GRM31MR71H105KA88L MD8IC SG73P2AT ipc sm 840 GRM188R71C104K01D ATC600F4R7BT250XT TO270 ATC600S5R6JT250XT PDF

    gsc3

    Abstract: GRM188R71C104K01D ATC600F4R7BT250XT
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 0, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original
    MD8IC970N MD8IC970NR1 MD8IC970N gsc3 GRM188R71C104K01D ATC600F4R7BT250XT PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original
    AFT21S240--12S AFT21S240-12SR3 PDF

    SEIKO EPSON SG-615 DATE CODE

    Abstract: S1D13781F00A100 Seiko Epson
    Text: S5U13781R00C100 Reference Board User Manual Document Number: X94A-G-004-01 Status: Revision 1.0 Issue Date: 2012/03/26 SEIKO EPSON CORPORATION Rev. 1.0 Page 2 Evaluation board/kit and Development tool important notice 1. This evaluation board/kit or development tool is designed for use for engineering evaluation,


    Original
    S5U13781R00C100 X94A-G-004-01 X94A-G-004-xx SEIKO EPSON SG-615 DATE CODE S1D13781F00A100 Seiko Epson PDF

    RR1220P-102-D

    Abstract: D58764 HSF-141C-35
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 1, 7/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original
    MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 RR1220P-102-D D58764 HSF-141C-35 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 2, 5/2011 RF LDMOS Wideband Integrated Power Amplifiers The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original
    MD8IC970N MD8IC970N MD8IC970NR1 MD8IC970GNR1 PDF

    HSF-141C-35

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5150N Rev. 0, 5/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5150NR1 MRFE6VP5150GNR1 These high ruggedness devices are designed for use in high VSWR


    Original
    MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1 MRFE6VP5150NR1 5/2014Semiconductor, HSF-141C-35 PDF

    ATC600S470JT250XT

    Abstract: SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35
    Text: Freescale Semiconductor Technical Data Document Number: MD8IC970N Rev. 1, 2/2011 RF LDMOS Wideband Integrated Power Amplifier The MD8IC970N wideband integrated circuit is designed with on-chip prematching that makes it usable from 136 to 940 MHz. This multi-stage


    Original
    MD8IC970N MD8IC970N MD8IC970NR1 ATC600S470JT250XT SG73P2AT GRM31MR71H105KA88L GRM188R71C104K01D RK73H2ATTD10R0F Soshin GSC362 J506 equivalent SG73P2ATTD Rogers RO4350B R8C35 PDF