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Amphenol Communications Solutions G17S0900110EU CONN D-SUB RCPT 9POS SLDR CUP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	G17S0900110EU	Tray	2,180		1	1 $1.28 10 $0.974 100 $0.7485 1000 $0.58661 10000 $0.53349	Buy Now
Newark	G17S0900110EU	Bulk	1,948		1	1 $0.659 10 $0.604 100 $0.557 1000 $0.557 10000 $0.557	Buy Now
TME	G17S0900110EU				2,000	1 - 10 - 100 - 1000 - 10000 $0.472	Get Quote
Master Electronics	G17S0900110EU		725			1 - 10 - 100 $0.5544 1000 $0.4591 10000 $0.4219	Buy Now
Amphenol Corporation G17S 0900 110 EU Conn D-Subminiature RCP 9 POS 2.77mm Solder Pot ST Panel Mount 9 Terminal 1 Port - Bulk (Alt: 96K5471)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	G17S 0900 110 EU	Bulk		17 Weeks, 3 Days	1	1 $1 10 $0.687 100 $0.606 1000 $0.606 10000 $0.606	Buy Now
	G17S 0900 110 EU	Tray		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.43983	Buy Now
Amphenol Corporation G17S0900110EU D-Sub Standard Connectors 9S RECPT SOLDER CUP FIXED PRECISION
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	G17S0900110EU		3,264			1 $1.01 10 $0.678 100 $0.578 1000 $0.518 10000 $0.518	Buy Now
Bristol Electronics	G17S0900110EU		10			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	G17S0900110EU	Tray	2,450		50	1 - 10 - 100 $0.494 1000 $0.457 10000 $0.448	Buy Now
Avnet Abacus	G17S0900110EU		2,000	16 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	G17S0900110EU		1,600		1	1 - 10 - 100 - 1000 $0.5286 10000 $0.4933	Buy Now
The Bergquist Company SP900S-0.009-00-1212 Thermal Interface Products Insulator, Low-Pressure, 12"x12" Sheet, 0.009" Thickness, Sil-Pad TSP1600S/900S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SP900S-0.009-00-1212		570			1 $46.27 10 $43.55 100 $38.11 1000 $38.11 10000 $38.11	Buy Now
Samtec Inc HCSD-07-S-09.00-01-N-ST4 Ribbon Cables / IDC Cables IDC Socket and Terminal Cable Assemblies, 0.100" Pitch Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	HCSD-07-S-09.00-01-N-ST4					1 $8.42 10 $7.7 100 $5.57 1000 $5.05 10000 $5.05	Get Quote

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S09001 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: IRFI9620G, SiHFI9620G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • P-Channel • Dynamic dV/dt • Low Thermal Resistance	Original	PDF	IRFI9620G, SiHFI9620G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFB18N50KPbF Abstract: IRFB18N50K SiHFB18N50K SiHFB18N50K-E3 Text: IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.26 Qg (Max.) (nC) 120 Qgs (nC) 34 Qgd (nC) 54 Configuration • Improved Gate, Avalanche and Dynamic dV/dt	Original	PDF	IRFB18N50K, SiHFB18N50K O-220 18-Jul-08 IRFB18N50KPbF IRFB18N50K SiHFB18N50K-E3
SiHF9530S-E3 Abstract: IRF9530S SiHF9530S IRF9530STRRPBF Text: IRF9530S, SiHF9530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.30 Qg (Max.) (nC) 38 Qgs (nC) 6.8 Qgd (nC) 21 Configuration Single S Surface Mount Available in Tape and Reel	Original	PDF	IRF9530S, SiHF9530S O-263) 18-Jul-08 SiHF9530S-E3 IRF9530S IRF9530STRRPBF
IRF9510 Abstract: No abstract text available Text: IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated	Original	PDF	IRF9510, SiHF9510 O-220 O-220 18-Jul-08 IRF9510
SiHFI830G Abstract: IRFI830G SiHFI830G-E3 Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI830G, SiHFI830G O-220 11-Mar-11 IRFI830G SiHFI830G-E3
Untitled Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	PDF	IRFI520G, SiHFI520G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration RoHS • For Automatic Insertion	Original	PDF	IRFD320, SiHFD320 18-Jul-08
SiHFD420 Abstract: No abstract text available Text: IRFD420, SiHFD420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 500 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration RoHS* • End Stackable COMPLIANT	Original	PDF	IRFD420, SiHFD420 18-Jul-08
CQFN Abstract: pressure sensor instrumentation amplifier circuit SG0614 SG0611 Text: PRODUCT HIGHLIGHT High Temperature Sensor Amplifier Module Designing a high temperature system SGA designs and produces integrated approach that creates a very small instru- is not only a matter of finding the right circuits for high temperature conditions.	Original	PDF	SG0611 CQFN-20 S-09-001-A SE-587 CQFN pressure sensor instrumentation amplifier circuit SG0614
IRFI744G Abstract: SiHFI744G SiHFI744G-E3 mosfet 740 IRFI744 Text: IRFI744G, SiHFI744G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI744G, SiHFI744G O-220 18-Jul-08 IRFI744G SiHFI744G-E3 mosfet 740 IRFI744
Untitled Abstract: No abstract text available Text: IRFI740GLC, SiHFI740GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz)	Original	PDF	IRFI740GLC, SiHFI740GLC O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SiHFI9640G Abstract: No abstract text available Text: IRFI9610G, SiHFI9610G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9610G, SiHFI9610G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 SiHFI9640G
SiHFI634G Abstract: No abstract text available Text: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI634G, SiHFI634G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiHFI640G Abstract: No abstract text available Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

Untitled Abstract: No abstract text available Text: IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI730G, SiHFI730G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiHFI9640G Abstract: No abstract text available Text: IRFI9640G, SiHFI9640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI9640G, SiHFI9640G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFI520G, SiHFI520G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating	Original	PDF	IRFI520G, SiHFI520G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI720G, SiHFI720G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SiHFI830G Abstract: No abstract text available Text: IRFI830G, SiHFI830G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI830G, SiHFI830G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFIBC30G, SiHFIBC30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFIBC30G, SiHFIBC30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
SiHFIZ44G Abstract: No abstract text available Text: IRFIZ44G, SiHFIZ44G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 60 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 0.028 Qg (Max.) (nC) 95 Qgs (nC) 27 • Sink to Lead Creepage Distance = 4.8 mm	Original	PDF	IRFIZ44G, SiHFIZ44G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
IRFI640G Abstract: IRFI640 SiHFI640G Text: IRFI640G, SiHFI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI640G, SiHFI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI640G IRFI640
IRFI720G Abstract: SiHFI720G SiHFI720G-E3 Text: IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance	Original	PDF	IRFI720G, SiHFI720G O-220 11-Mar-11 IRFI720G SiHFI720G-E3
IS09001 Abstract: H-33 H-35 ITR8307 h33 diode Text: eVERJLIGKT S09001 QS9000 APPROVED Subminiature High Sensitivity Photo Interrupter ITR8307 Features: ITR: • FAST RESPONSE TIME. • HIGHLY ANALYTICAL • CUTTING WAVELENGTH A.p=840nm. • THIN. • COMPACT. Package Dimensions: LO <=> Cc\iO ^ -!- 1-1	OCR Scan	PDF	IS09001 QS9000 ITR8307 840nm. ITR8307 CO307 Ta-25Â H-33 H-35 h33 diode

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S09001 Price and Stock

Amphenol Communications Solutions G17S0900110EU

Amphenol Corporation G17S 0900 110 EU

Amphenol Corporation G17S0900110EU

The Bergquist Company SP900S-0.009-00-1212

Samtec Inc HCSD-07-S-09.00-01-N-ST4

S09001 Datasheets Context Search

Untitled

IRFB18N50KPbF

SiHF9530S-E3

IRF9510

SiHFI830G

Untitled

Untitled

SiHFD420

CQFN

IRFI744G

Untitled

SiHFI9640G

SiHFI634G

SiHFI640G

Untitled

SiHFI9640G

Untitled

Untitled

SiHFI830G

Untitled

SiHFIZ44G

IRFI640G

IRFI720G

IS09001