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    S09006 Price and Stock

    ZETTLER Magnetics Inc BV301S09006

    115V INPUT 0.6VA PWR XFMR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BV301S09006 Tube 600 1
    • 1 $3.55
    • 10 $3.55
    • 100 $2.17417
    • 1000 $1.84376
    • 10000 $1.63673
    		Buy Now

    ZETTLER Magnetics Inc BV302S09006

    230V INPUT 0.6VA PWR XFMR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BV302S09006 Tube 590 1
    • 1 $2.84
    • 10 $2.84
    • 100 $1.73933
    • 1000 $1.47502
    • 10000 $1.4375
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    TME BV302S09006 155 1
    • 1 $1.97
    • 10 $1.97
    • 100 $1.59
    • 1000 $1.33
    • 10000 $1.24
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    ZETTLER Magnetics Inc BV202S09006

    230V INPUT 0.6VA PWR XFMR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BV202S09006 Tube 358 1
    • 1 $3.88
    • 10 $3.88
    • 100 $2.305
    • 1000 $1.97535
    • 10000 $1.83271
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    ZETTLER Magnetics Inc BV201S09006

    115V INPUT 0.6VA PWR XFMR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BV201S09006 Tube 354 1
    • 1 $3.88
    • 10 $3.88
    • 100 $2.305
    • 1000 $1.97535
    • 10000 $1.83271
    		Buy Now

    CUI Inc EPS090066-P1P

    AC/DC WALL MOUNT ADAPTER 9V 5.9W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EPS090066-P1P Box
    • 1 -
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    Bristol Electronics EPS090066-P1P 5
    • 1 -
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    Find more S09006 price and stock on Findchips.com

    S09006 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFP350LC

    Abstract: No abstract text available
    Text: IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 400 RDS(on) (Ω) VGS = 10 V 0.30 Qg (Max.) (nC) 76 Qgs (nC) 20 Qgd (nC) 37 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247


    Original     		IRFP350LC, SiHFP350LC O-247 18-Jul-08 IRFP350LC PDF

    IRFIBF30GPBF

    Abstract: IRFIBF30G SiHFIBF30G SiHFIBF30G-E3
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFIBF30G, SiHFIBF30G O-220 18-Jul-08 IRFIBF30GPBF IRFIBF30G SiHFIBF30G-E3 PDF

    IRFI9634G

    Abstract: SiHFI9634G SiHFI9634G-E3
    Text: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		IRFI9634G, SiHFI9634G O-220 18-Jul-08 IRFI9634G SiHFI9634G-E3 PDF

    IRFPE30

    Abstract: No abstract text available
    Text: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


    Original     		IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30 PDF

    ENV50204

    Abstract: S09005
    Text: LHR, LGR 4/5000 Series 10.30 Watt AC-DC Converters Input voltage ranges 85.265 V AC 88…168 V DC 1 or 2 outputs up to 48 V DC 4300 V DC I/O electric strength test voltage LGA • Class II equipment double insulation • Short circuit protection • Compact, low cost solution


    Original     		PDF

    SiHFI9Z14G

    Abstract: No abstract text available
    Text: IRFI9Z14G, SiHFI9Z14G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		IRFI9Z14G, SiHFI9Z14G O-220 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFIBF30G, SiHFIBF30G O-220 11-Mar-11 PDF

    IRFIB5N50L

    Abstract: SiHFIB5N50L-E3
    Text: IRFIB5N50L, SiHFIB5N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.67 RoHS COMPLIANT Qg (Max.) (nC) 45 Qgs (nC) 13 • Lower Gate Charge Results in Simpler Drive


    Original     		IRFIB5N50L, SiHFIB5N50L O-220 18-Jul-08 IRFIB5N50L SiHFIB5N50L-E3 PDF

    SiHFI9Z24G

    Abstract: No abstract text available
    Text: IRFI9Z24G, SiHFI9Z24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature


    Original     		IRFI9Z24G, SiHFI9Z24G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SiHFIZ24G

    Abstract: No abstract text available
    Text: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFIZ24G, SiHFIZ24G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFIB7N50L

    Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
    Text: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration


    Original     		IRFIB7N50L, SiHFIB7N50L O-220 18-Jul-08 IRFIB7N50L SiHFIB7N50L-E3 ktp12 PDF

    SiHFB16N60L-E3

    Abstract: w s p 1620 transformer IRFB16N60L SiHFB16N60L
    Text: IRFB16N60L, SiHFB16N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.385 • Lower Gate Charge Results in Simpler Drive Requirements


    Original     		IRFB16N60L, SiHFB16N60L O-220 18-Jul-08 SiHFB16N60L-E3 w s p 1620 transformer IRFB16N60L PDF

    SiHFIZ24G

    Abstract: No abstract text available
    Text: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFIZ24G, SiHFIZ24G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFIBF30G, SiHFIBF30G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFZ44 mosfet

    Abstract: IRFZ44 TO-263 IRFZ44 equivalent SiHFZ44L IRFZ44L IRFZ44S SiHFZ44L-E3 SiHFZ44S SiHFZ44S-E3
    Text: IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.028 Qg (Max.) (nC) 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single G G D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay utilize


    Original     		IRFZ44S, IRFZ44L, SiHFZ44S SiHFZ44L 18-Jul-08 IRFZ44 mosfet IRFZ44 TO-263 IRFZ44 equivalent IRFZ44L IRFZ44S SiHFZ44L-E3 SiHFZ44S-E3 PDF

    IRFP140

    Abstract: No abstract text available
    Text: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 rDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		IRFP140, SiHFP140 O-247 O-247 18-Jul-08 IRFP140 PDF

    D2Pak Package vishay material

    Abstract: IRLZ44S SiHLZ44S SiHLZ44S-E3
    Text: IRLZ44S, SiHLZ44S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.028 Qg (Max.) (nC) 66 Qgs (nC) 12 Qgd (nC) 43 Configuration Single D • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		IRLZ44S, SiHLZ44S O-263) 18-Jul-08 D2Pak Package vishay material IRLZ44S SiHLZ44S-E3 PDF

    IRFS11N50APBF

    Abstract: IRFS11N50A SiHFS11N50A SiHFS11N50A-E3
    Text: IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFS11N50A, SiHFS11N50A O-263) 18-Jul-08 IRFS11N50APBF IRFS11N50A SiHFS11N50A-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFIBF30G, SiHFIBF30G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package 900 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 3.7 • Sink to Lead Creepage Distance = 4.8 mm


    Original     		IRFIBF30G, SiHFIBF30G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFB9N30A, SiHFB9N30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dv/dt Rating 300 RDS(on) (Ω) VGS = 10 V 33 Qgs (nC) 6.9 Qgd (nC) 12 Configuration RoHS* • Repetitive Avalanche Rated 0.45 Qg (Max.) (nC) Available COMPLIANT


    Original     		IRFB9N30A, SiHFB9N30A O-220 O-220 18-Jul-08 PDF

    SiHFI9634G

    Abstract: No abstract text available
    Text: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the


    Original     		IRFI9634G, SiHFI9634G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFSL11N50A

    Abstract: SiHFSL11N50A SiHFSL11N50A-E3
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling


    Original     		IRFSL11N50A, SiHFSL11N50A O-262) IRFSL11N50APlectual 18-Jul-08 IRFSL11N50A SiHFSL11N50A-E3 PDF

    IRFIZ24G

    Abstract: SiHFIZ24G SiHFIZ24G-E3
    Text: IRFIZ24G, SiHFIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating


    Original     		IRFIZ24G, SiHFIZ24G O-220 18-Jul-08 IRFIZ24G SiHFIZ24G-E3 PDF