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    IRFSL11N50A

    Abstract: No abstract text available
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling


    Original
    PDF IRFSL11N50A, SiHFSL11N50A 2002/95/EC O-262) IRFSL11N50APbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. IRFSL11N50A

    Untitled

    Abstract: No abstract text available
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling


    Original
    PDF IRFSL11N50A, SiHFSL11N50A O-262) IRFSL11N50APbF SiHFSL11N50A-E3 IRFSL11N50A 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling


    Original
    PDF IRFSL11N50A, SiHFSL11N50A O-262) 2002/95/EC IRFSL11N50APbF SiHFSL11N50A-E3 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling


    Original
    PDF IRFSL11N50A, SiHFSL11N50A 2002/95/EC O-262) IRFSL11N50APbF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling


    Original
    PDF IRFSL11N50A, SiHFSL11N50A O-262) IRFSL11N50APbF SiHFSL11N50A-E3 IRFSL11N50A 18-Jul-08

    IRFSL11N50A

    Abstract: SiHFSL11N50A SiHFSL11N50A-E3
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration RoHS* • Fast Switching COMPLIANT • Ease of Paralleling


    Original
    PDF IRFSL11N50A, SiHFSL11N50A O-262) IRFSL11N50APlectual 18-Jul-08 IRFSL11N50A SiHFSL11N50A-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFSL11N50A_RC, SiHFSL11N50A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF IRFSL11N50A SiHFSL11N50A AN609, 4581m 8195m 3666m 0172m 3823m

    Untitled

    Abstract: No abstract text available
    Text: IRFSL11N50A, SiHFSL11N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V Qg (Max.) (nC) 51 Qgs (nC) 12 Qgd (nC) 23 Configuration • Repetitive Avalanche Rated 0.55 • Fast Switching • Ease of Paralleling


    Original
    PDF IRFSL11N50A, SiHFSL11N50A O-262) 2002/95/EC IRFSL11N50APbF SiHFSL11N50A-E3 11-Mar-11