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    S13140 Search Results

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    S13140 Price and Stock

    Cinch Connectivity Solutions MS-13-140

    Barrier Terminal Blocks MARKING STRIP 13 TRM 140 Series
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    Mouser Electronics MS-13-140
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    Interstate Connecting Components MS-13-140
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    Cinch Connectivity Solutions MS-13-140-Y

    Barrier Terminal Blocks 13 TERM 2 ROW .375 MARKER STRIP
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    Mouser Electronics MS-13-140-Y
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    Interstate Connecting Components MS-13-140-Y
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    nVent CSS1314050

    50 Mm Offset Positioner, Solid Round Conductor, Cbsc13, Cbsc14/Erico Electric |Nvent Erico CSS1314050
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    Newark CSS1314050 Pack 25
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    S13140 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD08P06-155L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SUD08P06-155L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiSA04DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiSA04DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS456DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS456DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiHB22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7850DP www.vishay.com Vishay Siliconix N-Channel 60 V D-S Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7850DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7898DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7898DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4490DY www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4490DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD19N20-90 www.vishay.com Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SUD19N20-90 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    7MC156

    Abstract: No abstract text available
    Text: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • High-denslty256K (256K x 1) CMOS static RAM module • Surface mounted LCC components mounted on a co-flred ceram ic substrate • Available In low profile 28-pin ceram ic SIP (single In-line


    OCR Scan     		High-denslty256K 28-pin 600mW IDT7187S 7MC156 S13-144 IDT7MC156 7MC156 S13-145 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT 7MC156 256K 256K x 1-BIT CMOS STATIC RAM SIP MODULE FEATURES: DESCRIPTION: • H igh-dansity 256K (256K x 1) CMOS static RAM m odule • Inputs and outputs d ire ctly TTL-com patible The IDT7MC156 is a 256K (256K x 1-bit) high-speed static RAM m odule constructed on a co-fired ceram ic substrate using four


    OCR Scan     		28-pin 600mW IDT7187s patible44 IDT7MC156 7MC156 256Kx S13-145 PDF