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    S1406 Search Results

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    TDK Corporation FS1406-0600-AL

    DC DC CONVERTER 0.6V
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    DigiKey FS1406-0600-AL Cut Tape 15,430 1
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    Mouser Electronics FS1406-0600-AL 77,342
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    TTI FS1406-0600-AL Reel 4,000
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    TDK Corporation FS1406-0600-AS

    DC DC CONVERTER 0.6V
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    DigiKey FS1406-0600-AS Cut Tape 1,471 1
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    FS1406-0600-AS Digi-Reel 1,471 1
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    FS1406-0600-AS Reel 1,000 250
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    Mouser Electronics FS1406-0600-AS 743
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    TTI FS1406-0600-AS Reel 250
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    Chip1Stop FS1406-0600-AS Cut Tape 15,749
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    ASSMANN WSW components GmbH H3CCS-1406M

    IDC CBL - HHKC14S/AE14M/HHKC14S
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    DigiKey H3CCS-1406M Bulk 1,397 1
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    ASSMANN WSW components GmbH H3DDS-1406G

    IDC CBL - HHKR14S/AE14G/HHKR14S
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    DigiKey H3DDS-1406G Bulk 500 1
    • 1 $1.1
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    TDK Corporation FS1406-2500-AS

    DC DC CONVERTER 2.5V
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    DigiKey FS1406-2500-AS Reel 500 250
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    Mouser Electronics FS1406-2500-AS 153
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    Newark FS1406-2500-AS Bulk 142 1
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    TTI FS1406-2500-AS Reel 250
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    Avnet Abacus FS1406-2500-AS 25 Weeks 250
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    Chip1Stop FS1406-2500-AS Cut Tape 199
    • 1 $1.65
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    S1406 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S1406-03 Hamamatsu Scan PDF
    S1406-03 Hamamatsu Photonics SILICON PHOTODIODE WITH BUILT-IN OP AMP Scan PDF
    S1406-04 Hamamatsu Scan PDF
    S1406-04 Hamamatsu Photonics SILICON PHOTODIODE WITH BUILT-IN OP AMP Scan PDF
    S1406-05 Hamamatsu Scan PDF
    S1406-05 Hamamatsu Photonics SILICON PHOTODIODE WITH BUILT-IN OP AMP Scan PDF
    S1406-06 Hamamatsu Scan PDF
    S1406-06 Hamamatsu Photonics SILICON PHOTODIODE WITH BUILT-IN OP AMP Scan PDF
    S14060G Faraday Technology Active Filter: Lowpass: DR00014A Original PDF
    S14065G Faraday Technology GENERAL PURPOSE LP FILTER Original PDF

    S1406 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LSI Logic lsi53c876

    Abstract: LSI53C876 MAS 8100 S LSI53C875 LSI53C876E SN75976A S14044
    Text: TECHNICAL MANUAL LSI53C876/876E PCI to Dual Channel SCSI Multifunction Controller Version 2.1 March 2001 S14066 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties


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    PDF LSI53C876/876E S14066 DB14-000167-00, LSI53C876/876E LSI Logic lsi53c876 LSI53C876 MAS 8100 S LSI53C875 LSI53C876E SN75976A S14044

    D3318

    Abstract: LSI53C897
    Text: TECHNICAL MANUAL LSI53C897 PCI to Dual Channel Ultra2 SCSI Multifunction Controller Version 2.0 April 2001 S14060 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties


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    PDF LSI53C897 S14060 DB14-000090-01, D-33181 D3318

    LSI53C810A

    Abstract: UC5601QP LSI53C810
    Text: TECHNICAL MANUAL LSI53C810A PCI to SCSI I/O Processor Version 2.1 March 2001 S14067 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


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    PDF LSI53C810A S14067 DB14-000168-00, LSI53C810A UC5601QP LSI53C810

    DIODE BY 255

    Abstract: C67078-S1406-A2
    Text: BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol


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    PDF O-220 C67078-S1406-A2 DIODE BY 255 C67078-S1406-A2

    LSI53C875JBE

    Abstract: LSI53C875JB LSI53C875J sem 2105 LSI53C875 SDIR11 B 722 P LSI53C875JE
    Text: TECHNICAL MANUAL LSI53C875/875E PCI to Ultra SCSI I/O Processor Version 4.1 March 2001 S14063 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


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    PDF LSI53C875/875E S14063 DB14-000165-00, LSI53C875/875E 16-Bit 16-Bit 16Bit LSI53C875 LSI53C875JBE LSI53C875JB LSI53C875J sem 2105 SDIR11 B 722 P LSI53C875JE

    LSI22915A

    Abstract: pc 525 ad6070 LSI22915 how to connect led s cables motherboard canada ices 003 class b S14068 str 2105 D3318 ICES-003 LSI53C1010
    Text: USER’S GUIDE LSI22915A PCI to Dual Channel Ultra160 SCSI Host Adapter Version 1.2 April 2001 S14068 Electromagnetic Compatibility Notices This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: 1. 2. This device may not cause harmful interference, and


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    PDF LSI22915A Ultra160 S14068 D-33181 D-85540 LSI22915A pc 525 ad6070 LSI22915 how to connect led s cables motherboard canada ices 003 class b S14068 str 2105 D3318 ICES-003 LSI53C1010

    DNES-309170W

    Abstract: 78148 FSP 3131 seagate logic board ULTRASPARC-III LSI40909G-S LSIFC909 SA30 111d2 Infinity Sales
    Text: USER’S GUIDE LSI40909G-S PCI to Fibre Channel Host Adapter for Sun Solaris Version 1.0 February 2001 S14062 Electromagnetic Compatibility Notices This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions:


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    PDF LSI40909G-S S14062 D-33181 D-85540 DNES-309170W 78148 FSP 3131 seagate logic board ULTRASPARC-III LSI40909G-S LSIFC909 SA30 111d2 Infinity Sales

    LSI53C1000

    Abstract: VHDCI 26 S14064 Mainboard Peacock LSI20160L scsi pinout VDE 0812 AD29 CRC-32 PC99
    Text: USER’S GUIDE LSI20160L PCI to Single Channel Ultra160 SCSI Low Profile Host Adapter Version 1.0 February 2001 S14064 Electromagnetic Compatibility Notices This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions:


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    PDF LSI20160L Ultra160 S14064 D-33181 D-85540 LSI53C1000 VHDCI 26 S14064 Mainboard Peacock scsi pinout VDE 0812 AD29 CRC-32 PC99

    lsi53c710

    Abstract: 53c770 53C700 LSI53C770 *720SE 75LBC976 intel 80386dx intel 80386sx TEA 0663 TEA 5560
    Text: TECHNICAL MANUAL LSI53C770 Ultra SCSI I/O Processor Version 2.1 March 2001 S14061 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


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    PDF LSI53C770 S14061 DB14-000161-00, LSI53C770 lsi53c710 53c770 53C700 *720SE 75LBC976 intel 80386dx intel 80386sx TEA 0663 TEA 5560

    LSI53C860

    Abstract: UC5601QP LSI53C810
    Text: TECHNICAL MANUAL LSI53C860 PCI to Ultra SCSI I/O Processor Version 2.1 April 2001 S14069 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


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    PDF LSI53C860 S14069 DB14-000171-00, LSI53C860 UC5601QP LSI53C810

    s1409

    Abstract: murata REEL label lot number SKY65050-372LF
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65050-372LF Block Diagram


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    PDF SKY65050-372LF: SC-70 J-STD-020) SKY65050-372LF 200967D s1409 murata REEL label lot number

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


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    PDF SiS439DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SKY65051-377LF: 0.45-6.0 GHz Low-Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations  Test instrumentation  LNA for GPS receivers  Satellite receivers Figure 1. SKY65051-377LF Block Diagram


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    PDF SKY65051-377LF: SKY65051-377LF 201069D

    SKY65050-372LF

    Abstract: S1408 S1410 VT47 S1417
    Text: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram


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    PDF SKY65050-372LF: SKY65050-372LF 200967E S1408 S1410 VT47 S1417

    S4112

    Abstract: S25920
    Text: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response


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    PDF S1406-03 S1406-04 SSS80 S5591 S3887 S6204 S2281 S2261-01 S2281-04 S4111 S4112 S25920

    S2858

    Abstract: S2858-01 PIN photodiode 300 nm photodiode 1100 nm S2856 S3887 photodiode 1000 nm G1957 24x24
    Text: c • Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength nm (mm) (mm) Features S1406-03 2.4X2.4 190 to 1100 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000 720 S1406-06 2.4X2.4 320 to 1000


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    PDF S1406-03 S1406-04 S1406-05 S1406-06 S5590 S5591 S3887 G1957 S2856, S2802 S2858 S2858-01 PIN photodiode 300 nm photodiode 1100 nm S2856 photodiode 1000 nm 24x24

    DIODE BUZ 94

    Abstract: No abstract text available
    Text: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1406-A2 40-------V DIODE BUZ 94

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A ^bS on 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    PDF O-220 C67078-S1406-A2 fi535bà Q064b51

    SIL02456

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor BUZ 255 • N channel • Enhancement mode • Avalanche-rated Type VDs ¡D ^DS on Package 11 Ordering Code BUZ 255 250 V 13.0 A 0.24 Q TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 31 "C


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    PDF O-220 C67078-S1406-A2 SIL02456 SIL02456

    Photodiode, TO-5,

    Abstract: ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 S1336 hamamatsu PIN TO5
    Text: SILICON PHOTODIODES WITH BUILT-IN OP AMP S1406 SERIES HAMAMATSU T E C H N IC A L D A T A FEATURES • Uses UV enhanced s ilic o n p h o to d io d e s S1226, S1336 series • FET in p u t o p e ra tio n a l a m p lifie r ( I b = 30pA) • H erm etica lly sealed in th e TO-5 package


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    PDF S1406 S1226, S1336 S1406-03/05 S1406-04/06 340nm, HPF262082F S-194 JAN/94 Photodiode, TO-5, ALCAN S1406-06 S1406-03 340nm Borosilicate S1226 1M12 hamamatsu PIN TO5

    Untitled

    Abstract: No abstract text available
    Text: Si Photodiodes with Pre-amp Type No. Active Area Feature mm S1406 Series 2.4 X S5590 2.4 X S5591 5.8 X Uses a photodiode chip of the S1226 or S1336 series and a borosilicate glass or quartz glass 2.4 window. Low noise operation suitable for precision measurement at low-light-level.


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    PDF S1406 S5590 S5591 S6204 S6204-01 S1226 S1336 10ackage S2281 S2281-01

    Untitled

    Abstract: No abstract text available
    Text: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000


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    PDF 00031a S1406-03 S1406-04 S1406-05 S1406-06 S5590 S5591 S3887 G1957 S1446,

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


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    PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    S1557

    Abstract: S1651-01 metal detectors circuits S1671 S2281 S1651 S1406-06 hamamatsu PIN TO5
    Text: HAMAMATSU CORP 4221fe,CH 00024T4 4 • tonæ rnim um n Speciall&Designe Specially Designed Photodiodes Ham amatsu currently produces a variety of special devices such as photodiode/op-amp detectors, TE-cooled photo­ diodes, and linear and mosaic arrays. If your application calls for something special, please contact us with your specific requirements.


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    PDF 4221fe 00024T4 S1446 S994-13 S1557 S1557-01 18-pin S1300 S1200 S1651-01 metal detectors circuits S1671 S2281 S1651 S1406-06 hamamatsu PIN TO5