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    Untitled

    Abstract: No abstract text available
    Text: in te i’ 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 ¡¡A (max.)


    OCR Scan     		PDF 51C256L 51C256L-15 51C256L-20 51C256L S1C256L

    51C258L

    Abstract: 51C258L-12 51C258L-15 51C258L-20 28012* intel
    Text: in t e i 51C258Lt LOW PO W ER 6 4 K x 4 C H M O S DYN A M IC RA M 51C258L-12 51C258L-15 51C258L-20 120 0.1 150 200 0.1 0.1 Maximum Access Time ns Maximum CHMOS Standby Current (mA) Low O perating Current — 50 m A (max.) Low Power Data Retention - sta n d b y current, C H M O S — 100 /iA


    OCR Scan     		PDF 51C258Lt 64Kx4 51C258L-12 51C258L-15 51C258L-20 51C258L 51C258L-20 28012* intel

    28003* intel

    Abstract: 51C256L 51C256L-15 51C256L-20 2800-310
    Text: in te i 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C256L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 Low Power Data Retention • TTL and HCT Compatible — Standb y current, C HM O S — 100 /¿A (m ax.) — R efresh period, R AS-O nly — 32 m s (m ax)


    OCR Scan     		PDF 51C256L 51C256L-15 51C256L-20 51C256L S1C256L 28003* intel 51C256L-20 2800-310