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Advanced Thermal Solutions Inc ATS-21A-19-C2-R0 HEATSINK 54X54X20MM XCUT T766
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DigiKey	ATS-21A-19-C2-R0	Tray	25		1	1 $4.82 10 $4.69 100 $4.82 1000 $4.82 10000 $4.82	Buy Now
Advanced Thermal Solutions Inc ATS-21A-10-C2-R0 HEATSINK 45X45X25MM XCUT T766
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DigiKey	ATS-21A-10-C2-R0	Tray	25		1	1 $6.28 10 $5.572 100 $6.28 1000 $6.28 10000 $6.28	Buy Now
Advanced Thermal Solutions Inc ATS-21A-112-C2-R1 HEATSINK 60.00MM X 60.00MM ALUM
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DigiKey	ATS-21A-112-C2-R1	Tray	25		1	1 $6.96 10 $6.773 100 $6.96 1000 $6.96 10000 $6.96	Buy Now
Avnet Americas	ATS-21A-112-C2-R1	Tray		8 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Thermal Solutions Inc ATS-21A-124-C2-R0 HEATSINK 50X50X25MM XCUT T766
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DigiKey	ATS-21A-124-C2-R0	Tray	25		1	1 $4.19 10 $4.077 100 $4.19 1000 $4.19 10000 $4.19	Buy Now
Avnet Americas	ATS-21A-124-C2-R0	Tray		8 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Thermal Solutions Inc ATS-21A-148-C2-R0 HEATSINK 35X35X15MM L-TAB T766
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DigiKey	ATS-21A-148-C2-R0	Tray	25		1	1 $4.05 10 $3.936 100 $4.05 1000 $4.05 10000 $4.05	Buy Now
Avnet Americas	ATS-21A-148-C2-R0	Tray		8 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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S21A1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
s-parameter Abstract: S11S22-S12S21 fa12 mark RF S-parameters RF transistors with s-parameters s-parameter s11 s12 s21 FA12 FB12 agilent ads cst microwave studio Text: DesignCon 2006 Accurate Calibration and Measurement of Non-Insertable Fixtures in FPGA and ASIC Device Characterization Hong Shi, Altera Corporation [[email protected]] Geping Liu, Altera Corporation Alan Liu, Altera Corporation CP-ACMFIX-1.0 Abstract S-parameter measurement on interfaces with non-insertable connections has been a	Original		PDF
TRANSISTOR SMD MARKING CODE NM Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is	Original	MC3403 2N2219 1N4148 MBC775 TRANSISTOR SMD MARKING CODE NM philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes	PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: S11A1 Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz S11A1 Glossary of Microwave Transistor Terminology	PDF
common emitter amplifier Abstract: No abstract text available Text: Transistors Explanation of symbols Explanation of symbols FGeneral symbols The following symbols are used to indicate electrical characteristics and other parameters. V : Voltage f : Frequency I : Current C : Capacitance P : Power N : Noise T : Temperature	Original		PDF
transistor s11 s12 s21 s22 Abstract: 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E transistor s11 s12 s21 s22 5091-8350E MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT high power FET transistor s-parameters s11a1 s-parameter s11 s12 s21	PDF
sot333 Abstract: sot390 Text: Philips Semiconductors General QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by: Philips Semiconductors is a Quality Company, renowned	Original	QS9000 sot333 sot390	PDF
Audio Output Transistor Amplifier Abstract: s11a1 Text: Transistors Explanation of symbols Explanation of symbols FGeneral symbols The following symbols are used to indicate electrical characteristics and other parameters. V : Voltage f : Frequency I : Current C : Capacitance P : Power N : Noise T : Temperature	Original		PDF
high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Abstract: Glossary of Microwave Transistor Terminology Text: High-Frequency Transistor Primer Part I Silicon Bipolar Electrical Characteristics Table of Contents I. Transistor Structure Types . A. Bipolar .	Original	5966-3085E high-frequency PNP and NPN transistors with transition frequencies above 5 GHz and 9 GHz Glossary of Microwave Transistor Terminology	PDF
smd-transistor DATA BOOK Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A Text: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance	Original	MC3403 2N2219 1N4148 MBC775 smd-transistor DATA BOOK smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A	PDF
Untitled Abstract: No abstract text available Text: 7 GHz 高频继电器 MEDER electronic 干簧继电器能处理高达10GHz的频率简介历年来的工程师都认为转换高频率和非常短而快的数字脉冲已有最佳方法，这种方法适用于为处理高频率而特别设计半导体– 即砷化镓场效应管。但现在砷	Original	10GHz 50ohm Z11Z12Z21Z22 TCE10 8-10GHz	PDF
AN1849 Abstract: APP1849 LS12 LS22 MAX2320 Text: Maxim > App Notes > Wireless and RF Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1849 Low-Noise Amplifier Stability Concept to Practical Considerations,	Original	MAX2320: com/an1849 AN1849, APP1849, Appnote1849, AN1849 APP1849 LS12 LS22 MAX2320	PDF
nec tokin oe 128 Abstract: NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	X18437JJ3V0IF00 X18437JJ2V0IF 10BASE2/5/-T 10Mbps 200m5 100BASE-T 100Mbps 100BASE-TX100BASE-T4100BASE-FX 1000BASE-X 1000BASE-LX1000BASE-SX1000BASE-CX nec tokin oe 128 NEC emma2 NEC 720114 PD720101 N13T2 JAPANESE 2SC TRANSISTOR 2010 uPC 2002 453 8pin opto p281 opto 5.5V 0.47f GC	PDF
RF transistors with s-parameters Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Hewlett-Packard High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E RF transistors with s-parameters MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT transistor s11 s12 s21 s22 Hewlett-Packard transistor microwave	PDF
high power FET transistor s-parameters Abstract: transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1 Text: High-Frequency Transistor Primer Part II Noise and S-parameter Characterization This is the second part of the Agilent Technologies High Frequency Transistor Primer series. It is an introduction to the noise and S-parameter characterization of GaAs FET and silicon bipolar	Original	5091-8350E 5968-1411E high power FET transistor s-parameters transistor s11 s12 s21 s22 FET transistors with s-parameters transistor s parameters noise 2S12 circle of constant Noise MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT bipolar transistor ghz s-parameter s21a1	PDF

AN1849 Abstract: APP1849 LS12 LS22 MAX2320 MAX2720 MAX2721 Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lna, rf, rfic, amplifier, stability, power gain, transmission lines, rfics, theory, smith chart, rf ics, radio frequency, amplifiers, low noise amplifier, amps Jan 09, 2003 APPLICATION NOTE 1849 Low-Noise Amplifier Stability Concept to Practical Considerations,	Original	com/an1849 MAX2320: MAX2720: MAX2721: AN1849, APP1849, Appnote1849, AN1849 APP1849 LS12 LS22 MAX2320 MAX2720 MAX2721	PDF
Untitled Abstract: No abstract text available Text: Transistors Explanation of symbols Explanation of symbols •G e n e ra l symbols V ceo : Collector-emitter voltage The maximum volt The following symbols are used to indicate electrical age betw een the collector and em itter when characteristics and other parameters.	OCR Scan		PDF