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    S8210 Search Results

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    S8210 Price and Stock

    Essentra Components SRS8-2-10-01

    BRD SPT SNAP LOCK SCREW MNT 5/8"
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    DigiKey SRS8-2-10-01 Bulk 5,000 1
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    Mouser Electronics SRS8-2-10-01
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    RS SRS8-2-10-01 Bulk 19 Weeks 1,000
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    DB Roberts SRS8-2-10-01
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    Bel Fuse SS-82100-005

    MOD JACK KEYSTONE CAT5E SHLD
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    DigiKey SS-82100-005 Box 274 1
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    Avnet Americas SS-82100-005 Bulk 8 Weeks, 6 Days 1
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    Stewart Connector SS-82100-001

    CONN MOD JACK 8P8C SHIELDED
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    DigiKey SS-82100-001 Bag 69 1
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    Master Electronics SS-82100-001 502
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    Electro Switch Corporation PS82-100G

    SWITCH PUSHBUTTON SPDT 5A 125V
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    DigiKey PS82-100G Bulk 1
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    onsemi SURS8210T3G

    DIODE GEN PURP 100V 2A SMB
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    S8210 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRLL110PBF

    Abstract: IRLL110TRPBF
    Text: IRLL110, SiHLL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D Surface Mount Available in Tape and Reel


    Original     		PDF IRLL110, SiHLL110 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRLL110PBF IRLL110TRPBF

    IRFL110TR

    Abstract: IRFL110, Siliconix
    Text: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFL110, SiHFL110 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFL110TR IRFL110, Siliconix

    s8210

    Abstract: A/s8210
    Text: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 s8210 A/s8210

    s8210

    Abstract: No abstract text available
    Text: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 s8210

    Untitled

    Abstract: No abstract text available
    Text: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFL110, SiHFL110 OT-223 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    S8210

    Abstract: TPCS8210
    Text: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 S8210 TPCS8210

    handbook of shipboard electromagnetic shielding practices

    Abstract: ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915
    Text: S9407-AB-HBK-010 Revision 2 HANDBOOK OF SHIPBOARD ELECTROMAGNETIC SHIELDING PRACTICES This document supersedes S9407-AB-HBK-010, Revision 1 date published 30 September 1989 APPROVED FOR PUBLIC RELEASE; DISTRIBUTION IS UNLIMITED Published by Direction of Commander, Naval Sea Systems Command


    Original     		PDF S9407-AB-HBK-010 S9407-AB-HBK-010, S9407-AB-HBK-010 03Z44, 05H31, 08K/CHABAY) PMS303A41, handbook of shipboard electromagnetic shielding practices ASTM-A-753 MIL-B-857 MIL-STD-463 s41 hall effect sensor s41 hall effect sensor s41 s41 hall effect sensor S9300-AW-EDG-010 Bendix synchro control transformer MIL-C-915

    IRFL210TRPBF

    Abstract: S8210
    Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRFL210, SiHFL210 OT-223 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFL210TRPBF S8210

    Untitled

    Abstract: No abstract text available
    Text: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D


    Original     		PDF IRFL9014, SiHFL9014 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFL014, SiHFL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the


    Original     		PDF IRFL014, SiHFL014 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRLL014, SiHLL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) () VGS = 5.0 V Qg (Max.) (nC) 0.20 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single Surface mount Available in tape and reel


    Original     		PDF IRLL014, SiHLL014 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFL110, SiHFL110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) () VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the


    Original     		PDF IRFL110, SiHFL110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRLL014, SiHLL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 5.0 V 0.20 Qg (Max.) (nC) 8.4 Qgs (nC) 3.5 Qgd (nC) 6.0 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRLL014, SiHLL014 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFL110

    Abstract: IRFL110, Siliconix
    Text: IRFL110, SiHFL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 10 V 0.54 Qg (Max.) (nC) 8.3 Qgs (nC) 2.3 Qgd (nC) 3.8 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF IRFL110, SiHFL110 2002/95/EC OT-223 11-Mar-11 IRFL110 IRFL110, Siliconix

    Untitled

    Abstract: No abstract text available
    Text: IRFL210, SiHFL210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRFL210, SiHFL210 OT-223 2002/95/EC OT-223 11-Mar-11

    irll110

    Abstract: IRLL110TRPBF
    Text: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRLL110, SiHLL110 2002/95/EC OT-223 OT-223 11-Mar-11 irll110 IRLL110TRPBF

    Untitled

    Abstract: No abstract text available
    Text: IRFL210, SiHFL210 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D SOT-223 G D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRFL210, SiHFL210 OT-223 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount


    Original     		PDF IRLL110, SiHLL110 2002/95/EC OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFL214, SiHFL214 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) () VGS = 10 V 2.0 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D Third generation power MOSFETs from Vishay provide the


    Original     		PDF IRFL214, SiHFL214 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRFL9110

    Abstract: No abstract text available
    Text: IRFL9110, SiHFL9110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -100 RDS(on) () VGS = -10 V Qg (Max.) (nC) 1.2 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DESCRIPTION Third generation power MOSFETs from Vishay provide the


    Original     		PDF IRFL9110, SiHFL9110 OT-223 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 IRFL9110

    s8210

    Abstract: TPCS8210 TPCS8210 application A1930 "S8210"
    Text: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications Unit: mm • Has a small footprint. • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 s8210 TPCS8210 TPCS8210 application A1930 "S8210"

    IRLL110TRPBF

    Abstract: s8210 SiHLL110
    Text: IRLL110, SiHLL110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration Single D DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRLL110, SiHLL110 2002/95/EC OT-223 OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRLL110TRPBF s8210

    s8210

    Abstract: TPCS8210 S-8210 TPCS8210 application
    Text: S8210 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIII S8210 Lithium Ion Battery Applications • Unit: mm Small footprint due to small and thin package · Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) · High forward transfer admittance: |Yfs| = 9.2 S (typ.)


    Original     		PDF TPCS8210 s8210 TPCS8210 S-8210 TPCS8210 application

    Untitled

    Abstract: No abstract text available
    Text: IRFL214, SiHFL214 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRFL214, SiHFL214 2002/95/EC OT-223 OT-223 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12