SA101
Abstract: SA102
Text: SA series, high-precision, Pt-film thermal sensors. Resistance tolerance of Ϯ0.06% class A . Suitable for high-precision temperature measurements up to 500ЊC. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical
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SA101
SA102
10sec.
850ppm/C
100ppm/C
15sec.
SA102
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Untitled
Abstract: No abstract text available
Text: SA series, high-precision, Pt-film thermal sensors. Resistance tolerance of Ϯ0.06% class A suitable for high-precision temperature measurements up to 500ЊC. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical
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SA101
SA102
SA101
10sec.
850ppm/C
100ppm/C
15sec.
55500C
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Untitled
Abstract: No abstract text available
Text: SE series, high-precision, Pt-film thermal sensors. Resistance tolerance of +/-0.06% class A suitable for high-precision temperature measurements up to 500 degree C. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical
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SA101
SA102
SA101
3850ppm/Ð
10sec.
100ppm/Ð
15sec.
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Untitled
Abstract: No abstract text available
Text: SA series, high-precision, Pt-film thermal sensors. Resistance tolerance of Ϯ0.06% class A . Suitable for high-precision temperature measurements up to 500ЊC. Available in various package for specific needs. SPECIFICATIONS Dimension (mm) L W P T Mechanical
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SA101
SA102
SA101
10sec.
850ppm/C
100ppm/C
15sec.
55500C
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SE102
Abstract: SE10255 sa102 equivalent
Text: SE series, high-precision, chiptype Pt-film thermal sensors. A surface-mount type with an excellent +/-0.48% resistance tolerance ideal for high-precision temperature measurement. SPECIFICATIONS Mechanical 1206 W P Dimension (mm) L W P T SE102* 3.20Ϯ0.20
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SE102*
SE10255
3750100ppm/C
55C125C
000pcs/reel
3850ppm/C
10sec.
100ppm/C
15sec.
55500C
SE102
sa102 equivalent
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SE102
Abstract: No abstract text available
Text: SE series, high-precision, chiptype Pt-film thermal sensors. A surface-mount type with an excellent Ϯ0.48% resistance tolerance ideal for high-precision temperature measurement. SPECIFICATIONS Mechanical 1206 W P Dimension (mm) L W P T SE102* 3.20Ϯ0.20
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SE102*
SE10155
3850100ppm/C
55C125C
000pcs/reel
SE10255
3750100ppm/C
SA101
SE102
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD23180FM-70 • FEATURES • Power supply voltage of 2.7 V to 3.1 V • High performance 70 ns maximum access time (Flash)
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MB84VD23180FM-70
73-ball
73-pinatives
4kw marking
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SGA29
Abstract: 32-KW Load Bank SA133 MBM29DL640E SA72 SA136
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50301-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x ×16) FLASH MEMORY & 16 M (× ×16) Mobile FCRAMTM MB84VD23381EF-85 • FEATURES • Power Supply Voltage of 2.7 V to 3.0 V for FCRAM • Power Supply Voltage of 2.7 V to 3.3 V for Flash
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DS05-50301-1E
MB84VD23381EF-85
SGA29
32-KW Load Bank
SA133
MBM29DL640E
SA72
SA136
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SA136
Abstract: SGA29 sA117 4kw marking SA97 Sa98 MB84VD23280FC-70 MBM29DL64DF SGA43 SA133
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0309
SA136
SGA29
sA117
4kw marking
SA97
Sa98
MB84VD23280FC-70
MBM29DL64DF
SGA43
SA133
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SA101
Abstract: 4kw marking Diode SA98 SA102 Sa98 MB84VD23180FM-70 MBM29DL64DF
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0310
SA101
4kw marking
Diode SA98
SA102
Sa98
MB84VD23180FM-70
MBM29DL64DF
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VCCF02
Abstract: sA117 SA97 S-A106 sa123 SA124 Sa84 MBM29BS64LF SA125 SA101
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0311
VCCF02
sA117
SA97
S-A106
sa123
SA124
Sa84
MBM29BS64LF
SA125
SA101
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BGA-101P-M01
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-2E
MB84LD23381EJ-10
101-ball
BGA-101P-M01
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4kw marking
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0307
4kw marking
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32 KB SRAM
Abstract: DS05-50208-1E SWITCH SA125
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-1E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power supply voltage of 2.3 to 2.7 V for FCRAM • Power supply voltage of 2.3 to 2.7 V for Flash
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DS05-50208-1E
MB84LD23381EJ-10
101-ball
MB84VD23381EJ-90
32 KB SRAM
DS05-50208-1E
SWITCH SA125
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32 KB SRAM
Abstract: MBM29DL640E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50209-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) SRAM Interface FCRAM MB84VD23381EJ-90 • FEATURES • Power supply voltage of 2.7 V to 3.1 V for FCRAM • Power supply voltage of 2.7 V to 3.3 V for Flash
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DS05-50209-2E
MB84VD23381EJ-90
32 KB SRAM
MBM29DL640E
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V
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DS05-50210-1E
MB84LD23280EA-10/MB84LD23280EE-10
101-ball
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Untitled
Abstract: No abstract text available
Text: MB84VD23381FJ-80 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MB84VD23381FJ-80
F0307
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50221-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84VD23280FA-70 • FEATURES • • • • • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50221-1E
MB84VD23280FA-70
65-ball
F0204
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash
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DS05-50208-3E
MB84LD23381EJ-10
101-ball
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Untitled
Abstract: No abstract text available
Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0406
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM
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DS05-50208-3E
MB84LD23381EJ-10
101-ball
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-4E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance
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DS05-50211-4E
MB84VD23280EA/EE-85/90
ns/90
101-ball
F0107
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50221-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84VD23280FA-70 • FEATURES • • • • • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50221-1E
MB84VD23280FA-70
65-ball
F0204
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA/EE-85/90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance
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DS05-50211-3E
MB84VD23280EA/EE-85/90
ns/90
101-ball
F0105
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