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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: b3E D Sb42E05 0000043 ¡=,33 HAP MICROWAVE PULSED POWER TRANSISTOR PH1214-6.OM PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 -1.4 GHz Operation Common Base Configuration Gold Metallization System


    OCR Scan     		Sb42E05 PH1214-6 100pS MA2026A ATC100AConfiguration ATC100A TT5QM50A, PDF

    T4 0450

    Abstract: transistor j8
    Text: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry


    OCR Scan     		PH0404-30EL Sb42E05 Sb422DS D001177 T4 0450 transistor j8 PDF

    MA4P506-1072

    Abstract: MA4P504-30 MA4P504-1072 MA4P506-258
    Text: m an A M P company Packaged PIN Diodes MA4P100 thru 600 Series Features • • • • • • High Power PIN Diodes Fast Speed PIN Diodes Voltage Ratings to 1500 Volts Long Carrier Lifetime Designs Wide Variety of Hermetic Packages High Reliability for Space/Military Applications


    OCR Scan     		MA4P100 MA4P202, MA4P203, MA4P303, MA4P404 MA4P102) MA4P504, MA4P505, MA4P506) MA4P604, MA4P506-1072 MA4P504-30 MA4P504-1072 MA4P506-258 PDF