SB61H1024AS-12
Abstract: SB61H1024AS SB61H1024AS-10 SB61H1024AS12 sb61h1024 SB61H1024A SB61
Text: SB61H1024AS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AS
SB61H1024AS
072-words
32-pin
300mil
072-word
500mV
SB61H1024AS-12
SB61H1024AS-10
SB61H1024AS12
sb61h1024
SB61H1024A
SB61
|
SB61H1024AS-10
Abstract: SB61H1024AS-15 SB61H1024AS
Text: SB61H1024AS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AS
SB61H1024AS
072-words
32-pin
300mil
072-word
500mV
SB61H1024AS-10
SB61H1024AS-15
|
Untitled
Abstract: No abstract text available
Text: SB61H1024AT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AT-XG
SB61H1024AT-XG
072-words
32-pin
20mil
072-word
500mV
|
SB61H1024AT-12
Abstract: No abstract text available
Text: SB61H1024AT Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AT
072-words
SB61H1024AT
32-pin
20mil
072-word
500mV
SB61H1024AT-12
|
SB61H1024AS
Abstract: SB61H1024AS-XG SB61H1024AS-12 SB61H1024AS-12G SB61H1024AS-10 SB61H1024A SB61H1024AS12
Text: SB61H1024AS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AS-XG
SB61H1024AS-XG
072-words
32-pin
300mil
072-word
500mV
SB61H1024AS
SB61H1024AS-12
SB61H1024AS-12G
SB61H1024AS-10
SB61H1024A
SB61H1024AS12
|
Untitled
Abstract: No abstract text available
Text: SB61H1024AT Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AT
072-words
SB61H1024AT
32-pin
20mil
072-word
500mV
|
Untitled
Abstract: No abstract text available
Text: SB61H1024AS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AS-XG
SB61H1024AS-XG
072-words
32-pin
300mil
072-word
500mV
|
Untitled
Abstract: No abstract text available
Text: SB61H1024AT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024AT-XG
SB61H1024AT-XG
072-words
32-pin
20mil
072-word
500mV
|
SB61H1024A-10
Abstract: SB61H1024A-12 SB61H1024A-15
Text: SB61H1024A Silicon-Based Technology 131,072 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024A series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and
|
Original
|
PDF
|
SB61H1024A
SB61H1024A
072-words
32-pin
300mil
072-word
500mV
SB61H1024A-10
SB61H1024A-12
SB61H1024A-15
|
CS16LV40963
Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D
|
Original
|
PDF
|
32Kx8
LY6264
LY62L64
LY62256
LY62L256
LY62256
128Kx8
64Kx16
LY621024
LY62L1024
CS16LV40963
BS62LV4006
sram cross reference
CS18LV40963
LY6264
Hynix Cross Reference
cs18lv10245
cs18lv02560
LY621024
K6X1008C2D
|