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    SB61H1024A Search Results

    SB61H1024A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SB61H1024A-10 Silicon Based Technology Company 131072x8-Bits STATIC CMOS RAM Original PDF
    SB61H1024A-12 Silicon Based Technology Company 131072x8-Bits STATIC CMOS RAM Original PDF
    SB61H1024A-15 Silicon Based Technology Company 131072x8-Bits STATIC CMOS RAM Original PDF

    SB61H1024A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SB61H1024AS-12

    Abstract: SB61H1024AS SB61H1024AS-10 SB61H1024AS12 sb61h1024 SB61H1024A SB61
    Text: SB61H1024AS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


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    PDF SB61H1024AS SB61H1024AS 072-words 32-pin 300mil 072-word 500mV SB61H1024AS-12 SB61H1024AS-10 SB61H1024AS12 sb61h1024 SB61H1024A SB61

    SB61H1024AS-10

    Abstract: SB61H1024AS-15 SB61H1024AS
    Text: SB61H1024AS Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


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    PDF SB61H1024AS SB61H1024AS 072-words 32-pin 300mil 072-word 500mV SB61H1024AS-10 SB61H1024AS-15

    Untitled

    Abstract: No abstract text available
    Text: SB61H1024AT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


    Original
    PDF SB61H1024AT-XG SB61H1024AT-XG 072-words 32-pin 20mil 072-word 500mV

    SB61H1024AT-12

    Abstract: No abstract text available
    Text: SB61H1024AT Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


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    PDF SB61H1024AT 072-words SB61H1024AT 32-pin 20mil 072-word 500mV SB61H1024AT-12

    SB61H1024AS

    Abstract: SB61H1024AS-XG SB61H1024AS-12 SB61H1024AS-12G SB61H1024AS-10 SB61H1024A SB61H1024AS12
    Text: SB61H1024AS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


    Original
    PDF SB61H1024AS-XG SB61H1024AS-XG 072-words 32-pin 300mil 072-word 500mV SB61H1024AS SB61H1024AS-12 SB61H1024AS-12G SB61H1024AS-10 SB61H1024A SB61H1024AS12

    Untitled

    Abstract: No abstract text available
    Text: SB61H1024AT Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


    Original
    PDF SB61H1024AT 072-words SB61H1024AT 32-pin 20mil 072-word 500mV

    Untitled

    Abstract: No abstract text available
    Text: SB61H1024AS-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AS-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


    Original
    PDF SB61H1024AS-XG SB61H1024AS-XG 072-words 32-pin 300mil 072-word 500mV

    Untitled

    Abstract: No abstract text available
    Text: SB61H1024AT-XG Silicon-Based Technology 131,072 x8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024AT-XG series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


    Original
    PDF SB61H1024AT-XG SB61H1024AT-XG 072-words 32-pin 20mil 072-word 500mV

    SB61H1024A-10

    Abstract: SB61H1024A-12 SB61H1024A-15
    Text: SB61H1024A Silicon-Based Technology 131,072 x 8-Bits Very High Speed and Low Power Memory STATIC CMOS RAM PRELIMINARY Description: The SB61H1024A series products are 131,072-words by 8-bits static RAM fabricated with advanced 8" wafer submicron CMOS technology. Using unique CMOS peripheral circuits and


    Original
    PDF SB61H1024A SB61H1024A 072-words 32-pin 300mil 072-word 500mV SB61H1024A-10 SB61H1024A-12 SB61H1024A-15

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


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    PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D