TSSOP 8PIN MARK 21
Abstract: land pattern for TSsOP 16 6pin land pattern for TSsOP 8 2952 8pin HA005-A-P
Text: CMOS IC PACKAGES Package Type DIP/TO Gull-wing Flat-lead WLP *1 Pin Count 3 8 4 5 3 5 6 3 5 8 14 8 10 8 16 24 8 5 6 8 8 10 6 4 6 8 4 5 6 8 Package Name TO-92 8-Pin DIP SC-82AB SC-88A SOT-23-3 SOT-23-5 SOT-23-6 SOT-89-3 SOT-89-5 8-Pin SOP JEDEC 14-Pin SOP
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SC-82AB
SC-88A
OT-23-3
OT-23-5
OT-23-6
OT-89-3
OT-89-5
14-Pin
10-Pin
16-Pin
TSSOP 8PIN MARK 21
land pattern for TSsOP 16
6pin
land pattern for TSsOP 8
2952 8pin
HA005-A-P
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ULTVST5VESGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD ULTVST5VESGP ULTRA-LOW CAPACITANCE TVS VOLTAGE 5 V 125 WATTS PEAK PULSE POWER FEATURES *125W peak pulse power dissipation rating at tp= 8X20uSec * Low leakage curren a *Protects up to two I/O lines SC-75/SOT-523/SC-89-3 * High temperature soldering guaranteed :
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8X20uSec
SC-75/SOT-523/SC-89-3
260C/10
SC-75
ULTVST5VESGP
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2SC5547
Abstract: mark 641 sot dc AD 4272
Text: 〈Transistor〉 2SC5547 For High Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING 2SC5547 is SC-62 SOT-89 package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. UNIT:mm
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2SC5547
2SC5547
SC-62
OT-89)
OT-89
SC-62
mark 641 sot dc
AD 4272
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Untitled
Abstract: No abstract text available
Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21
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Si1013R/X
SC-75A
SC-89
2002/95/EC
SC-75A
OT-416)
Si1013R
OT-490)
Si1013X
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Untitled
Abstract: No abstract text available
Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3
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Si1012R
Si1012X
SC-75A
SC-89
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3
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Si1012R
Si1012X
SC-75A
SC-89
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21
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Si1013R/X
SC-75A
SC-89
2002/95/EC
SC-75A
OT-416)
Si1013R
OT-490)
Si1013X
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Untitled
Abstract: No abstract text available
Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89
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2SD2661
180mV
SC-62
OT-89
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Untitled
Abstract: No abstract text available
Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89
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2SD2661
180mV
SC-62
OT-89
2SD2661
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2SD2661
Abstract: T100
Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89
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2SD2661
180mV
SC-62
OT-89
2SD2661
T100
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Untitled
Abstract: No abstract text available
Text: MCP111/112 Micropower Voltage Detector Features Package Types 3-Pin SOT-89 3-Pin SOT23-3/SC-70 VOUT 1 VSS 2 VDD MCP111/112 • Ultra-low supply current: 1.75 µA max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 4.38V and 4.63V
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MCP111/112
OT-89
OT23-3/SC-70
MCP111
MCP112
OT23-3,
SC-70
OT-89-3
MCP1XX-195)
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Untitled
Abstract: No abstract text available
Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers
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Si1039X
SC-89
2002/95/EC
Si1039X-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: WGSMF05C 5-Line ESD Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20µs) * Protects Up To Four / Five I/O Lines * Ultra-Small SC-89 Package (1.6 x 1.6 x 0.55mm) Requires Less Than 2.9mm2 Of PCB Area
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WGSMF05C
SC-89
IEC61000-4-2
IEC61000-4-4
5/50ns
OT-563
OT-563
10sec.
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Untitled
Abstract: No abstract text available
Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers
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Si1037X
SC-89
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
|
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Untitled
Abstract: No abstract text available
Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers
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Si1039X
SC-89
2002/95/EC
Si1039X-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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L425
Abstract: lanskroun
Text: Ta CAPACITORS WITH CONDUCTIVE POLYMER ROBUST TO LEAD FREE PROCESS A B S T R A C T : Tantalum capacitors with conductive polymer cathodes have found a place in the market as a low ESR component with reduced ignition. Conductive polymer cathodes however, suffer from instability
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S-TCCPR0M605-N
L425
lanskroun
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)
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LRB521S-30T1
SC-79/SOD523)
200mA
200mA)
OD523/SC-79
LRB521S-30T1
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CY7C1335
Abstract: CY7C1336 DO30 3Tg 21
Text: „ ADVANCED INFORMATION CY7C1335 CY7C1336 '# C Y P n h b b 32K x 32 Synchronous Cache RAM Features • Synchronous self-timed writes • Supports 75-MHz Pentium and PowerPC™ operations with zero wait states • Asynchronous output enable • JEDEC-standard 100 TQFP pinout
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CY7C1335
CY7C1336
75-MHz
66-MHz
60-MHz
CY7C1335)
CY7C1336)
CY7C1336
DO30
3Tg 21
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diode sy 345
Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989
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PDF
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III/18/379
diode sy 345
diode SY 192
sd 339
sy 320 diode
SD 338
SY 345
KT 829 b
k3451
KT 828 A
SD337
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2sc180
Abstract: 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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PDF
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
2sc180
2SC176
2SC175
2SC76
3N36
2SC177
2SC73
2SC75
2SC77
2SC78
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MT1711
Abstract: 2sC103 transistor 2sC124 at336 2sc120 2SC103 2SC634 2SC632 2SC899 FK918
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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PDF
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450MS
370fS
MD2369BF*
500MSA
ME5001
500M5
SE5010
500MS
TI407
MT1711
2sC103 transistor
2sC124
at336
2sc120
2SC103
2SC634
2SC632
2SC899
FK918
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3T202
Abstract: 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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PDF
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250nb
2SD63
2SD64
2SD65
2SC89Ã
2SC179t
3T202
25C60
2n1779
2n1780
2N1783
2T52
3N29
2SC175
2SC177
2SC73
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2N1103
Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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buy56-4
BUY56-6
buy56-10
BUY72-4
BUY72-6
BUY72-10
2N1103
2SC5220
2SA479
AC122-30
OC75N
2SC167
2SC166
2N2161
AF185
SFT155
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2N35 Ge NPN
Abstract: 2SD128 2N2426 2SC18H 2SC34 2SD31 2SD32 GT1608 GT1609 SYL1454
Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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OCR Scan
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PDF
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
2N35 Ge NPN
2SD128
2N2426
2SC18H
2SC34
2SD31
2SD32
GT1608
GT1609
SYL1454
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