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    SC-89 JEDEC Search Results

    SC-89 JEDEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP139AIYAHR Texas Instruments JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 Visit Texas Instruments Buy
    SN74SSQEA32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQE32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments
    SN74SSQEB32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQEC32882ZALR Texas Instruments JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy

    SC-89 JEDEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSSOP 8PIN MARK 21

    Abstract: land pattern for TSsOP 16 6pin land pattern for TSsOP 8 2952 8pin HA005-A-P
    Text: CMOS IC PACKAGES Package Type DIP/TO Gull-wing Flat-lead WLP *1 Pin Count 3 8 4 5 3 5 6 3 5 8 14 8 10 8 16 24 8 5 6 8 8 10 6 4 6 8 4 5 6 8 Package Name TO-92 8-Pin DIP SC-82AB SC-88A SOT-23-3 SOT-23-5 SOT-23-6 SOT-89-3 SOT-89-5 8-Pin SOP JEDEC 14-Pin SOP


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    PDF SC-82AB SC-88A OT-23-3 OT-23-5 OT-23-6 OT-89-3 OT-89-5 14-Pin 10-Pin 16-Pin TSSOP 8PIN MARK 21 land pattern for TSsOP 16 6pin land pattern for TSsOP 8 2952 8pin HA005-A-P

    ULTVST5VESGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD ULTVST5VESGP ULTRA-LOW CAPACITANCE TVS VOLTAGE 5 V 125 WATTS PEAK PULSE POWER FEATURES *125W peak pulse power dissipation rating at tp= 8X20uSec * Low leakage curren a *Protects up to two I/O lines SC-75/SOT-523/SC-89-3 * High temperature soldering guaranteed :


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    PDF 8X20uSec SC-75/SOT-523/SC-89-3 260C/10 SC-75 ULTVST5VESGP

    2SC5547

    Abstract: mark 641 sot dc AD 4272
    Text: 〈Transistor〉 2SC5547 For High Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING 2SC5547 is SC-62 SOT-89 package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. UNIT:mm


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    PDF 2SC5547 2SC5547 SC-62 OT-89) OT-89 SC-62 mark 641 sot dc AD 4272

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    PDF Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


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    PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1012R, Si1012X Vishay Siliconix N-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 • • • • • • • SC-75A or SC-89 G 1 APPLICATIONS 3


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    PDF Si1012R Si1012X SC-75A SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21


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    PDF Si1013R/X SC-75A SC-89 2002/95/EC SC-75A OT-416) Si1013R OT-490) Si1013X

    Untitled

    Abstract: No abstract text available
    Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 External dimensions (Unit : mm) Features Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89


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    PDF 2SD2661 180mV SC-62 OT-89

    2SD2661

    Abstract: T100
    Text: 2SD2661 Transistors Low frequency amplifier transistor 12V, 2A 2SD2661 zExternal dimensions (Unit : mm) zFeatures Low VCE(sat) ≤ 180mV (IC / IB = 1A / 50mA) 4.0 2.5 0.4 1.5 1.0 0.5 (1) 4.5 3.0 0.5 1.6 (2) 0.4 1.5 0.4 1.5 (3) ROHM : MPT3 JEITA : SC-62 JEDEC: SOT-89


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    PDF 2SD2661 180mV SC-62 OT-89 2SD2661 T100

    Untitled

    Abstract: No abstract text available
    Text: MCP111/112 Micropower Voltage Detector Features Package Types 3-Pin SOT-89 3-Pin SOT23-3/SC-70 VOUT 1 VSS 2 VDD MCP111/112 • Ultra-low supply current: 1.75 µA max. • Precision monitoring options of: - 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V, 4.38V and 4.63V


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    PDF MCP111/112 OT-89 OT23-3/SC-70 MCP111 MCP112 OT23-3, SC-70 OT-89-3 MCP1XX-195)

    Untitled

    Abstract: No abstract text available
    Text: Si1039X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.165 at VGS = - 4.5 V - 0.95 0.220 at VGS = - 2.5 V - 0.82 0.280 at VGS = - 1.8 V - 0.67 SC-89 (6-LEADS) D 1 6 D D 2 5 D APPLICATIONS 3 4 • Cell Phones and Pagers


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    PDF Si1039X SC-89 2002/95/EC Si1039X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: WGSMF05C 5-Line ESD Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20µs) * Protects Up To Four / Five I/O Lines * Ultra-Small SC-89 Package (1.6 x 1.6 x 0.55mm) Requires Less Than 2.9mm2 Of PCB Area


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    PDF WGSMF05C SC-89 IEC61000-4-2 IEC61000-4-4 5/50ns OT-563 OT-563 10sec.

    Untitled

    Abstract: No abstract text available
    Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers


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    PDF Si1037X SC-89 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si1037X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.195 at VGS = - 4.5 V - 0.84 0.260 at VGS = - 2.5 V - 0.73 0.350 at VGS = - 1.8 V - 0.64 SC-89 (6-LEADS) APPLICATIONS D 1 6 D D 2 5 D 3 4 • Cell Phones and Pagers


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    PDF Si1037X SC-89 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    L425

    Abstract: lanskroun
    Text: Ta CAPACITORS WITH CONDUCTIVE POLYMER ROBUST TO LEAD FREE PROCESS A B S T R A C T : Tantalum capacitors with conductive polymer cathodes have found a place in the market as a low ESR component with reduced ignition. Conductive polymer cathodes however, suffer from instability


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    PDF S-TCCPR0M605-N L425 lanskroun

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)


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    PDF LRB521S-30T1 SC-79/SOD523) 200mA 200mA) OD523/SC-79 LRB521S-30T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)


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    PDF LRB521S-30T1 SC-79/SOD523) 200mA 200mA) OD523/SC-79 LRB521S-30T1

    CY7C1335

    Abstract: CY7C1336 DO30 3Tg 21
    Text: „ ADVANCED INFORMATION CY7C1335 CY7C1336 '# C Y P n h b b 32K x 32 Synchronous Cache RAM Features • Synchronous self-timed writes • Supports 75-MHz Pentium and PowerPC™ operations with zero wait states • Asynchronous output enable • JEDEC-standard 100 TQFP pinout


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    PDF CY7C1335 CY7C1336 75-MHz 66-MHz 60-MHz CY7C1335) CY7C1336) CY7C1336 DO30 3Tg 21

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


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    PDF III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337

    2sc180

    Abstract: 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2sc180 2SC176 2SC175 2SC76 3N36 2SC177 2SC73 2SC75 2SC77 2SC78

    MT1711

    Abstract: 2sC103 transistor 2sC124 at336 2sc120 2SC103 2SC634 2SC632 2SC899 FK918
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF 450MS 370fS MD2369BF* 500MSA ME5001 500M5 SE5010 500MS TI407 MT1711 2sC103 transistor 2sC124 at336 2sc120 2SC103 2SC634 2SC632 2SC899 FK918

    3T202

    Abstract: 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF 250nb 2SD63 2SD64 2SD65 2SC89Ã 2SC179t 3T202 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73

    2N1103

    Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155

    2N35 Ge NPN

    Abstract: 2SD128 2N2426 2SC18H 2SC34 2SD31 2SD32 GT1608 GT1609 SYL1454
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


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    PDF NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 2N35 Ge NPN 2SD128 2N2426 2SC18H 2SC34 2SD31 2SD32 GT1608 GT1609 SYL1454