SC70t
Abstract: l 0713
Text: Package Information Vishay Siliconix CASE OUTLINE for PowerPAK SC70T D A Terminal #1 b e b Pin 1 T Pin 1 D3 D2 D2 E2 E2 E2 K E3 K4 E4 Pin 2 D2 C A1 K K Topside View e Pin 3 L Pin 2 L E Pin 3 A Pin 4 Pin 5 Pin 6 K3 K2 K1 Z MILLIMETERS NOM. MAX. 0.60 0.65
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SC70T
C09-0671-Rev.
07-SepILLIMETERS
07-Sep-09
SC70t
l 0713
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65370
Abstract: No abstract text available
Text: Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK SC70T D A b e PIN3 PIN1 T L PIN3 K E2 E2 D3 D2 b PIN2 D2 D2 K K E4 E3 K4 L PIN2 E PIN1 E2 e Terminal #1 Topside View PIN6 PIN6 PIN4 PIN5 K1 K2 C PIN4 K2 K1 Backside View of Single
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SC70T
C12-0160-Rev.
05-Mar-12
05-Mar-12
65370
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Untitled
Abstract: No abstract text available
Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA444DJT
SC-70-6L-Single
SC-70
2002/95/EC
SiA444DJT-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: LMH7220 www.ti.com SNOSAL3D – SEPTEMBER 2006 – REVISED MAY 2008 LMH7220 High Speed Comparator with LVDS Output Check for Samples: LMH7220 FEATURES DESCRIPTION • The LMH7220 is a high speed, low power comparator with an operating supply voltage range of 2.7V to
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LMH7220
LMH7220
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PIN-RD100
Abstract: No abstract text available
Text: LMH6601 www.ti.com SNOSAK9D – JUNE 2006 – REVISED OCTOBER 2009 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Check for Samples: LMH6601 FEATURES DESCRIPTION • The LMH6601 is a low voltage 2.4V – 5.5V , high speed voltage feedback operational amplifier suitable
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LMH6601
LMH6601/LMH6601Q
LMH6601Q
AEC-Q100
LMH6601
PIN-RD100
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA907EDJT
SC-70
2002/95/EC
SC-70-6L-Dual
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: LMH6601, LMH6601-Q1 www.ti.com SNOSAK9E – JUNE 2006 – REVISED MARCH 2013 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Check for Samples: LMH6601, LMH6601-Q1 FEATURES DESCRIPTION • The LMH6601 is a low voltage 2.4V – 5.5V , high
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LMH6601,
LMH6601-Q1
LMH6601/LMH6601Q
LMH6601
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiA907EDJT
SC-70
2002/95/EC
SC-70-6L-Dual
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 4.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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SiA444DJT
SC-70
2002/95/EC
SC-70-6L-Single
SiA444DJT-T1-GE3
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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SiA429DJT
SC-70
2002/95/EC
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.057 at VGS = - 4.5 V - 4.5a 0.095 at VGS = - 2.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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SiA907EDJT
SC-70
2002/95/EC
SC-70-6L-Dual
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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SiA429DJT
SC-70
2002/95/EC
SC-70-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA444DJT www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 VDS (V) 30 • TrenchFET power MOSFET Qg (TYP.) • New thermally enhanced PowerPAK® SC-70
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SiA444DJT
SC-70
SC-70-6L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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SiA444DJT
SC-70
2002/95/EC
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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0.1Hz+to+10Hz+noise
Abstract: No abstract text available
Text: Arthur Kay TI Precision Designs: Verified Design 0.1Hz to 10Hz Noise Filter TI Precision Designs Circuit Description TI Precision Designs are analog solutions created by TI’s analog experts. Verified Designs offer the theory, component selection, simulation, complete PCB
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ISO/TS16949
ISO/TS16949.
0.1Hz+to+10Hz+noise
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Untitled
Abstract: No abstract text available
Text: User Guide for FEBFHR1200_SPG01A Evaluation Board High-Performance Shunt Regulator Featured Fairchild Product: FHR1200 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com 2014 Fairchild Semiconductor Corporation
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FEBFHR1200
SPG01A
FHR1200
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Untitled
Abstract: No abstract text available
Text: SiA907EDJT www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) ID (A) 0.057 at VGS = -4.5 V -4.5 a 0.095 at VGS = -2.5 V -4.5 a Qg (TYP.) 4.9 nC PowerPAK SC-70-6L Dual S2 4 D1 6 G2 5 • TrenchFET® power MOSFET
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SiA907EDJT
SC-70-6L
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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SiA429DJT
SC-70
2002/95/EC
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA429DJT Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.0205 at VGS = - 4.5 V - 12a 0.027 at VGS = - 2.5 V - 12a 0.036 at VGS = - 1.8 V - 12a 0.060 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21
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Original
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SiA429DJT
SC-70
2002/95/EC
SC-70-6L-Single
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiA444DJT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a 0.017 at VGS = 10 V 12 0.022 at VGS = 4.5 V 12 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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SiA444DJT
SC-70
2002/95/EC
SC-70-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: LMH6601, LMH6601-Q1 www.ti.com SNOSAK9E – JUNE 2006 – REVISED MARCH 2013 LMH6601/LMH6601Q 250 MHz, 2.4V CMOS Operational Amplifier with Shutdown Check for Samples: LMH6601, LMH6601-Q1 FEATURES DESCRIPTION • The LMH6601 is a low voltage 2.4V – 5.5V , high
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Original
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LMH6601,
LMH6601-Q1
LMH6601/LMH6601Q
LMH6601Q
AEC-Q100
LMH6601
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PDF
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Untitled
Abstract: No abstract text available
Text: SiA430DJT www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. ID (A) b, c 0.0135 at VGS = 10 V 12 a 0.0185 at VGS = 4.5 V 10.8 • TrenchFET power MOSFET Qg (Typ.) • Thermally enhanced PowerPAK® SC-70 package
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SiA430DJT
SC-70
SC-70-6L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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