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    SCHOTTKY HIGH VOLTAGE Search Results

    SCHOTTKY HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    SCHOTTKY HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: WSD751S Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package


    Original     		WSD751S OD-523 OD-523 1000m PDF

    TSF20U100C

    Abstract: No abstract text available
    Text: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF20U100C 2011/65/EU 2002/96/EC ITO-220AB D1403005 TSF20U100C PDF

    Untitled

    Abstract: No abstract text available
    Text: WSD520S/521S Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 200m AMPERES 30 VOLTS Feature: *Extrmely High Switching Speed. *Low Forward Voltage and Low Reverse Current. *High Reliability. *Schottky Barrier Diodes Encapsulated in a SOD-523 Package


    Original     		WSD520S/521S OD-523 OD-523 0WSD520S/521S WSD521S PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408022 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1408021 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10H100C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10H100C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401020 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF2080C creat by ART Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF2080C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401018 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSPB15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSPB15U100S J-STD-020 2011/65/EU 2002/96/EC D1408051 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSPB10U45S J-STD-020 2011/65/EU 2002/96/EC D1407011 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSN520M60 J-STD-020 2011/65/EU 2002/96/EC D1408069 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP12U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408044 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP20U60S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1312013 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSP15U50S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309033 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401021 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30U45C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30U45C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1310024 PDF

    10U45

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 10U45 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408042 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP20U60S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP20U60S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408047 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF10U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF10U60C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401023 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSF30U60C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability


    Original     		TSF30U60C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1311002 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1407012 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSP10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement


    Original     		TSP10U45S J-STD-020 2011/65/EU 2002/96/EC O-277A JESD22-B102 D1309024 PDF