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    SDP8406 Search Results

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    SDP8406 Price and Stock

    Honeywell Sensing and Control SDP8406-001

    SENSOR PHOTO 935NM SIDE VIEW RAD
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    DigiKey SDP8406-001 Bulk
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    Verical SDP8406-001 1,050 50
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    • 100 $1.95
    • 1000 $1.313
    • 10000 $1.2649
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    SDP8406-001 430 58
    • 1 $1.09
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    • 100 $1.09
    • 1000 $1.01
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    Onlinecomponents.com SDP8406-001 1,490
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    • 1000 $1.012
    • 10000 $0.908
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    TME SDP8406-001 430
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    Master Electronics SDP8406-001 1,490
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    Honeywell Sensing and Control SDP8406-002

    SENSOR PHOTO 935NM SIDE VIEW RAD
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    Honeywell Sensing and Control SDP8406-003

    SENSOR PHOTO 935NM SIDE VIEW RAD
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    Quest Components SDP8406-003 724
    • 1 $8.55
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    • 1000 $4.275
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    Honeywell Sensing and Control SDP8406-004

    SENSOR PHOTO 935NM SIDE VIEW RAD
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    DigiKey SDP8406-004 Bulk 200
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    Quest Components SDP8406-004 64
    • 1 $3.768
    • 10 $2.7632
    • 100 $2.512
    • 1000 $2.512
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    Honeywell Sensing and Control SDP8406-146

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    Verical SDP8406-146 858 81
    • 1 $0.78
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    Onlinecomponents.com SDP8406-146 858
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    • 1000 $0.839
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    Master Electronics SDP8406-146
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    • 100 $1.162
    • 1000 $0.839
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    SDP8406 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SDP8406 Honeywell Silicon Phototransistor Original PDF
    SDP8406-001 Honeywell Phototransistor Module, 100nA Dark Current, 840nm Wavelength Original PDF
    SDP8406-002 Honeywell Phototransistor Module, 100nA Dark Current, 840nm Wavelength Original PDF
    SDP8406-003 Honeywell Phototransistor Module, 100nA Dark Current, 840nm Wavelength Original PDF
    SDP8406-004 Honeywell Phototransistor Module, 100nA Dark Current, 840nm Wavelength Original PDF
    SDP8406-1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SDP8406-1 Spectronics Product Data Book (Shortform) Scan PDF
    SDP8406-2 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SDP8406-3 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    SDP8406-4 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    SDP8406 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Infrared Phototransistor

    Abstract: infrared diode Infrared Emitting Diode SDP8106 SDP8406 SEP8506
    Text: 17 September 1997 SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 Infrared Phototransistor infrared diode Infrared Emitting Diode SDP8106

    all datasheet phototransistor

    Abstract: Infrared Phototransistor SDP8406 SEP8506 SEP8706
    Text: 17 September 1997 SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF


    Original     		PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506 all datasheet phototransistor Infrared Phototransistor

    SEP8506

    Abstract: SDP8000 SDP8406 SDP8106
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50¡ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    Original     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SDP8000 SDP8106

    SDP8406

    Abstract: SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003 SEP8706
    Text: SDP8406 Silicon Phototransistor INFRA-21.TIF FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes OUTLINE DIMENSIONS in inches (mm)


    Original     		PDF SDP8406 INFRA-21 SEP8506/8526 SEP8706 INFRA-17 SDP8406 SEP8506 INFRA-31 SDP8406-004 SDP8406-001 SDP8406-002 SDP8406-003

    SEP8706-003

    Abstract: SEP8706 SEP8706-001 SDP8106 SEP8706-002
    Text: SEP8706 AlGaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    Original     		PDF SEP8706 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8706 INFRA130 SEP8706-003 SEP8706-001 SDP8106 SEP8706-002

    SDP8106

    Abstract: SDP8406 SEP8706
    Text: SEP8706 AlGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50¡ nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    Original     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8706 SDP8106

    SDP8406

    Abstract: SEP8506 SEP8706
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50¡ nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes INFRA-21.TIF DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded


    Original     		PDF SDP8406 SEP8506 SEP8706 INFRA-21 SDP8406 SEP8506

    SEP8506-001

    Abstract: SEP8506-002 SEP8506-003 SDP8106 SEP8506 infra red diode
    Text: SEP8506 GaAs Infrared Emitting Diode INFRA-20.TIF FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt


    Original     		PDF SEP8506 INFRA-20 SDP8406/8426 SDP8106 SDP8000/8600 INFRA-71 SEP8506 INFRA130 SEP8506-001 SEP8506-002 SEP8506-003 SDP8106 infra red diode

    HOA0825-4

    Abstract: HOA0825-1 HOA0825-3 HOA0825-2 7N55 6n55 2N55 HOA0825 1T55 5T55
    Text: HONEYWELL INC/ MICRO M1E D • 4551330 0013fl75 1 *HONl T - Ml-73 Transmissive With Plastic Encapsulated Components Assemblies Assem blies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device fam ilies. All sensors are phototransistors.


    OCR Scan     		PDF Ml-73 SEP8506 SDP8406 HOA0825-1 HOA0825-2 HOA0825-3 HOA0825-4 -0-L51 060x0 -0-L55 HOA0825-4 HOA0825-1 HOA0825-3 HOA0825-2 7N55 6n55 2N55 HOA0825 1T55 5T55

    Untitled

    Abstract: No abstract text available
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle . Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes DESCRIPTION The SDP8406 is an NPN silicon phototransistor molded


    OCR Scan     		PDF SDP8406 SEP8506 SEP8706 SDP8406 00ES5MC

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package . 50“ nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 SEP8506

    Untitled

    Abstract: No abstract text available
    Text: HONEYWELL INC/ MICRO M1E D 4 5 5 1 0 3 0 00 1 3 07 5 1 IH0N1 -.T-m-73 Transmissive With Plastic Encapsulated Components Assemblies Assemblies on this page are based on plastic-encapsulated components from the SEP8506 and SDP8406 device families. All sensors are phototransistors.


    OCR Scan     		PDF T-m-73 SEP8506 SDP8406 HOA0825-1 HOA0825-2 HOA0825-3 HOA0825-4 060x0 HOAO86- -1-N55)

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive current • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406/8426 SDP8106 SDP8000/8600 SEP8706 SDP8406

    phototransistor 650 nm

    Abstract: No abstract text available
    Text: SDP8406 Silicon Phototransistor FEATURES • Side-looking plastic package • 50° nominal acceptance angle • Wide sensitivity ranges • Mechanically and spectrally matched to SEP8506/8526 and SEP8706 infrared emitting diodes «•flfSr ■ mFï ’ 5, '


    OCR Scan     		PDF SDP8406 SEP8506/8526 SEP8706 SDP8406 SEP8506 phototransistor 650 nm

    Untitled

    Abstract: No abstract text available
    Text: SDP8406 Silicon Phototransistor FEATURES • Sid e-looking plastic packag e • 50° nominal acce p ta n ce angle • W ide sensitivity ranges • M e ch a n ica lly and spectrally m atched to S E P 8 5 0 6 and S E P 8 7 0 6 infrared emitting diodes DESCRIPTION


    OCR Scan     		PDF SDP8406 SDP8406\

    R840

    Abstract: NFRA-20-TIF
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength • Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 NFRA-20-TIF SEP8706 R840 NFRA-20-TIF

    Untitled

    Abstract: No abstract text available
    Text: SEP8506 GaAs Infrared Emitting Diode FEATURES • Side-emitting plastic package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8506 SDP8406 SDP8106 SDP8000/8600 INFRA-20 SEP8506 SEP8506---

    Untitled

    Abstract: No abstract text available
    Text: SEP8706 AIGaAs Infrared Emitting Diode FEATURES • Side-looking plastic package • 50° nominal beam angle • 880 nm wavelength » Higher output power than GaAs at equivalent drive currents • Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106


    OCR Scan     		PDF SEP8706 SDP8406 SDP8106 SDP8000/8600 SEP8706 G0224T4

    Untitled

    Abstract: No abstract text available
    Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 SDP8426

    sep8526-002

    Abstract: No abstract text available
    Text: SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger


    OCR Scan     		PDF SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 SDP8426 sep8526-002

    HOA-1882-12

    Abstract: HOA1874-12 HOA1873-12 HOA1879-15 HOA1879-11 HOA1873-13 HOA1872-13 D 400 transistor HOA1882-12 transistor
    Text: HONEYWELL INC/ MICRO MIE D M SSlfiBD G 013ñ7 b 3 • M O N I K A - Z ? Assemblies Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506IRED, the SDP8406 phototran­ sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE


    OCR Scan     		PDF SEP8506IRED, SDP8406 SDP8106 HOA1872-11 HOA1872-12 HOA1872-13 HOA1873-11 HOA1873-12 HOA1873-13 HOA1874-11 HOA-1882-12 HOA1874-12 HOA1879-15 HOA1879-11 D 400 transistor HOA1882-12 transistor

    HOA1870-33

    Abstract: HOA1881-12 HOA0880-P51 HOA1881-13 HOA0880-T55 HOA0880-T51 HOA0880-N51 HOA0892 HOA0882-T55
    Text: H O NE Y WE L L INC/ MI CRO HIE S • 4531630 0013677 5 ■ Transmissive With Plastic Components, Wire Leads H0NlT-#*73 Assemblies Assemblies listed on this page are based on SEP8506 and SDP8406. All sensors are phototransistors. ORDER AND SPECIFICATION GUIDE


    OCR Scan     		PDF SEP8506 SDP8406. HOA0880-L51 HOA0880-L55 HOA0881-L55 HOA0882-L55 HOA0890-L51 HOA0890-L55 HOA0891-L51 HOA0892-L55 HOA1870-33 HOA1881-12 HOA0880-P51 HOA1881-13 HOA0880-T55 HOA0880-T51 HOA0880-N51 HOA0892 HOA0882-T55

    SEP8526

    Abstract: sep8526-002 diode honeywell
    Text: b7E » • 4SS1Û30 001bb7S MOT « H O N l HONEYWELL INC/ MICRO SEP8526 GaAs Infrared Emitting Diode FEATURES • Side-emitting package • 50° nominal beam angle • 935 nm wavelength • Mechanically and spectrally matched to SDP8406/8426 phototransistor, SDP8106


    OCR Scan     		PDF 001bb7S SEP8526 SDP8406/8426 SDP8106 SDP8000/8600 SEP8526 0Dlbb77 SDP8426 sep8526-002 diode honeywell

    transistor

    Abstract: HOA1873-13 HOA1884-12 HOA1882-12 HOA1874-12 HOA-1882-12 HOA1872-12 HOA1878-13 HOA1872-13 HOA1882-11
    Text: HONEYWELL INC/ MICRO Assemblies 41E J> 4551030 0013fl7b 3 •H0N1 Transmissive With Plastic Encapsulated Components The assemblies on this page are based on SEP8506 IRED, the SDP8406 phototran­ sistor and the SDP8106 photodarlington. ORDER AND SPECIFICATION GUIDE


    OCR Scan     		PDF 45S1A30 0013fl SEP8506 SDP8406 SDP8106 HOA1872-11 HOA1872-12 HOA1872-13 HOA1873-11 HOA1873-12 transistor HOA1873-13 HOA1884-12 HOA1882-12 HOA1874-12 HOA-1882-12 HOA1878-13 HOA1882-11