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    C277

    Abstract: 6N55 SEFH6N55
    Text: SEFH6H55 SEFH7N50 SEFM6N55 SEFM7H50 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Ghannel enhancement mode P ow er-M os field effect transistors, V D SS R D S ON •d 500 V 0.8 Q 7A


    OCR Scan     		PDF SEFH6H55 SEFH7N50 SEFM6N55 SEFM7H50 300ns, C-279 SEFH6N55 SEFH7H50 SEFM7N50 C277 6N55