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SEMIKRON SEMIX303GB12E4S Igbt Module, Dual, 1.2Kv, 466A; Continuous Collector Current:466A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SEMIX303GB12E4S
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX303GB12E4S	Bulk			6	1 - 10 $169.73 100 $155.19 1000 $155.19 10000 $155.19	Buy Now
RS	SEMIX303GB12E4S	Bulk			1	1 $767.96 10 $706.53 100 $706.53 1000 $706.53 10000 $706.53	Get Quote
SEMIKRON SEMIX303GB12E4S 27890130 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX303GB12E4S 27890130				1	1 $501.3 10 $398.1 100 $398.1 1000 $398.1 10000 $398.1	Get Quote

SEMIX303GB12E4S Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX303GB12E4s E63532 AppliMiX303GB12E4s	PDF
Untitled Abstract: No abstract text available Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX303GB12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V	Original	SEMiX303GB12E4s SEMiX303GB12E4s E63532	PDF
semix303gb12e4s Abstract: No abstract text available Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX303GB12E4s VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 20 V	Original	SEMiX303GB12E4s SEMiX303GB12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX303GB12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C	Original	SEMiX303GB12E4s E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX303GB12E4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 466 A Tc = 80 °C 359 A 300 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	SEMiX303GB12E4s E63532	PDF
453gb12e4s Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1	Original	AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF