SEMIX653GB176HDS Search Results

SEMIX653GB176HDS Price and Stock

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SEMIKRON SEMIX653GB176HDS Igbt Power Module; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- Rohs Compliant: Yes \|Semikron SEMIX653GB176HDS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SEMIX653GB176HDS	Bulk			6	1 - 10 $334.44 100 $315.19 1000 $315.19 10000 $315.19	Buy Now
SEMIKRON SEMIX653GB176HDS 27890450 Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SEMIX653GB176HDS 27890450				1	1 $996.76 10 $787.03 100 $708.11 1000 $708.11 10000 $708.11	Get Quote

SEMIX653GB176HDS Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SEMIX653GB176HDS		Semikron	Trench IGBT Modules		Original	PDF
SEMiX653GB176HDS		Semikron	Trench IGBT Modules		Original	PDF

SEMIX653GB176HDS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX653GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V	Original	SEMiX653GB176HDs SEMiX653GB176HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C	Original	SEMiX653GB176HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs	PDF
E63532 Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules	Original	SEMiX653GB176HDs E63532	PDF
Untitled Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs	PDF
Untitled Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs	PDF
Untitled Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1700 V Tc = 25°C 619 A Tc = 80°C 438 A 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25°C 545 A Tc = 80°C 365 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules	Original	SEMiX653GB176HDs B100/125 R100exp B100/125 1/T-1/T100)	PDF
IC1700 Abstract: No abstract text available Text: SEMiX653GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1700 V Tc = 25 °C 619 A Tc = 80 °C 438 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -55 . 150 °C Tc = 25 °C	Original	SEMiX653GB176HDs IC1700	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
SEMIX353GB126V1 Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots	Original	SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1	PDF