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    SEMIX703GB126HD Search Results

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    SEMIX703GB126HD Price and Stock

    SEMIKRON SEMIX703GB126HD

    Igbt Module, 1.2Kv, 646A, Semix 3; Continuous Collector Current:650A; Collector Emitter Saturation Voltage:1.2Kv; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX703GB126HD
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    Newark SEMIX703GB126HD Bulk 6
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    Richardson RFPD SEMIX703GB126HD 1
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    SEMIKRON SEMIX703GB126HDS

    Igbt Module, 1.2Kv, 650A, Semix 3S; Continuous Collector Current:642A; Collector Emitter Saturation Voltage:2.1V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2V Rohs Compliant: Yes |Semikron SEMIX703GB126HDS
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    Newark SEMIX703GB126HDS Bulk 6
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    SEMIKRON SEMIX703GB126HDS 27890700

    Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
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    TME SEMIX703GB126HDS 27890700 1
    • 1 $888.78
    • 10 $701.89
    • 100 $631.28
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    SEMIX703GB126HD Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SEMIX703GB126HD Semikron IGBT Module; Continuous Collector Current, Ic:700A; Collector Emitter Saturation Voltage, Vce(sat):1.7V; Collector Current:700A; Collector Emitter Voltage, Vceo:1200V; Continuous Collector Current @ 25 C:700A; Package/Case:SEMiX 3 RoHS Compliant: Yes Original PDF
    SEMiX703GB126HD Semikron Trench IGBT Modules Original PDF
    SEMIX703GB126HD Semikron Trench IGBT Modules Original PDF
    SEMiX703GB126HDS Semikron Trench IGBT Modules Original PDF
    SEMIX703GB126HDS Semikron Trench IGBT Modules Original PDF

    SEMIX703GB126HD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		SEMiX703GB126HDs SEMiX703GB126HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		SEMiX703GB126HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C


    Original     		SEMiX703GB126HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules ICRM = 2xICnom 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


    Original     		SEMiX703GB126HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 642 A Tc = 80 °C 449 A 450 A ICnom ICRM SEMiX 3s Trench IGBT Modules SEMiX703GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V


    Original     		SEMiX703GB126HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		SEMiX703GB126HDs B100/125 R100exp B100/125 1/T-1/T100) PDF

    Diode c 642

    Abstract: semix703gb126hd SEMiX703GB126
    Text: SEMiX703GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 642 A Tc = 80°C 449 A 900 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 561 A Tc = 80°C 384 A ICRM = 2xICnom VGES SEMiX 3s Trench IGBT Modules


    Original     		SEMiX703GB126HDs Diode c 642 semix703gb126hd SEMiX703GB126 PDF

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c PDF

    SEMIX353GB126V1

    Abstract: SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1
    Text: Product Change Notification product group: SEMiX no.: 09-039 Change of SEMiX housing subject of change: change of SEMiX housing, namely form of nuts at the main terminals, housing material, one-piece housing, mounting domes for driver assembly and spring slots


    Original     		SK645FR substit43/09 JESD46 1005/Rev SEMIX353GB126V1 SEMIX703GB126V1 semix503gb126v1 SEMiX653GD176v1 SEMIX252GB126V1 SEMiX241MD008s SEMIX302GB126V1 semix503gb126v SEMIX353GB126HDS SEMiX353GD176v1 PDF