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    BUV48 SE

    Abstract: SGSD00036 kkz 10
    Text: rZ 7 SGS-THOMSON [fflD g œ iIlL IÊ ÏÏM M ! TECHNICAL NOTE COMPARISON OF POWER MOS AND BIPOLAR POWER TRANSISTORS It is highly predictable that in the near future POWER MOS will, in many applications, gradually replace power bipolar devices due to the numerous


    OCR Scan     		PDF SGS30MA050D1 250fi SGS30M SGS40TA045D: SGS400T045D O-24Q BUV48 SE SGSD00036 kkz 10