Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SHF0186K Search Results

    SHF0186K Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SHF-0186K Sirenza Microdevices DC-3 GHz, 0.5 Watt AlGaAs/GaAs HFET Original PDF
    SHF-0186K-TR1 Sirenza Microdevices DC-4 GHz, 0.5 Watt AIGaAs/GaAs HFET Original PDF
    SHF-0186K-TR2 Sirenza Microdevices DC-4 GHz, 0.5 Watt AIGaAs/GaAs HFET Original PDF
    SHF-0186K-TR3 Sirenza Microdevices DC-4 GHz, 0.5 Watt AIGaAs/GaAs HFET Original PDF

    SHF0186K Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN-020

    Abstract: sirenza fet
    Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original
    PDF SHF-0186K 100mA. SHF-0186K TypiSHF-0186K EDS-101577 AN-020 sirenza fet

    SHF-0186K

    Abstract: Sirenza Microdevices, Inc sirenza fet
    Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original
    PDF SHF-0186K 100mA. 100mA) SHF-0186K EDS-101577 Sirenza Microdevices, Inc sirenza fet

    Untitled

    Abstract: No abstract text available
    Text: Product Description SHF-0186K Stanford Microdevices’ SHF-0186K is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency.


    Original
    PDF SHF-0186K SHF-0186K SHF-0186K-TR1 SHF-0186K-TR2 SHF-0186K-TR3

    SHF-0186K

    Abstract: AN020 shf0186k
    Text: Preliminary Preliminary Product Description Stanford Microdevices’ SHF-0186K is a high performance GaAs Heterostructure FET housed in a low-cost surface-mount plastic package. HFET technology improves breakdown voltage while minimizing Schottky leakage current for higher power added


    Original
    PDF SHF-0186K 100mA. SHF-0186K EDS-101577 AN020 shf0186k

    shf0186k

    Abstract: SHF-0186K Sirenza Microdevices, Inc
    Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.


    Original
    PDF SHF-0186K 100mA. 100mA) SHF-0186K EDS-101577 shf0186k Sirenza Microdevices, Inc

    HFET

    Abstract: SHF-0186K-TR2 SHF-0186K-TR3 SHF-0186K SHF-0186K-TR1
    Text: Product Description SHF-0186K Stanford Microdevices’ SHF-0186K is a AIGaAs/GaAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology improves breakdown voltage for high drain voltage operation. Its low Schottky leakage current improves power added efficiency.


    Original
    PDF SHF-0186K SHF-0186K SHF-0186K-TR1 SHF-0186K-TR2 SHF-0186K-TR3 HFET SHF-0186K-TR2 SHF-0186K-TR3 SHF-0186K-TR1

    2.5 GHz RF power transistors with s-parameters

    Abstract: No abstract text available
    Text: 1Stanford Microdevices SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky


    OCR Scan
    PDF SHF-0186K SHF-0186K SHF-0186K-TR1 SHF-0186K-TR2 SHF-0186K-TR3 2.5 GHz RF power transistors with s-parameters

    Untitled

    Abstract: No abstract text available
    Text: SHF-0186, -0186K DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET October, 1995 Features - AIGaAs/GaAs H e te ro stru ctu re FET T ech n o lo g y - High Pow er Added E fficie n cy: Up to 40% - High A sso cia te d G ain: 16dB T ypical at 2GHz - A vailable in P lastic o r Flanged Ceram ic Package


    OCR Scan
    PDF SHF-0186, -0186K DC-12 Id-150mA) 50mAj 150mA,

    Untitled

    Abstract: No abstract text available
    Text: 1Stanford Microdevices Product Description SHF-0186K Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky


    OCR Scan
    PDF SHF-0186K SHF-0186K

    SNA-486

    Abstract: SPF-1576 SPF-2076 Z27D SPF-1676 sna-186 SPDT FETs
    Text: Table of Contents Model Description SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 Low-Noise GaAs FETs 1-2GHz 0.8dB NF r 2GHz 1-2GHz 0.5dB NF ® 2G H z 2-!2G H z0.7dB NF ¡34G H z 2-12GHz 0.5dB NF {n}4GHz 2-26GHz 0.6dB NF ® 12GHz 2-26G H z0.5dB N F ® 12G H z


    OCR Scan
    PDF SPF-284 SPF-484 SPF-684 SPF-884 SPF-1576 SPF-1676 SPF-2076 SPF-2098 SPF-2298 SPF-2086 SNA-486 Z27D sna-186 SPDT FETs

    Untitled

    Abstract: No abstract text available
    Text: SHF-0186K Product Description Stanford M icrodevices’ SHF-0186K is a AIG aAs/G aAs Heterostructure FET housed in a low cost surface mount plastic package. HFET technology im proves breakdown voltage for high drain voltage operation. Its low Schottky leakage current im proves power added efficiency.


    OCR Scan
    PDF SHF-0186K SHF-0186K