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    SI1077X Search Results

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    SI1077X Price and Stock

    Vishay Siliconix SI1077X-T1-GE3

    MOSFET P-CH 20V SC89-6
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    DigiKey SI1077X-T1-GE3 Digi-Reel 7,641 1
    • 1 $0.61
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    SI1077X-T1-GE3 Cut Tape 7,641 1
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    SI1077X-T1-GE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI1077X-T1-GE3

    Trans MOSFET P-CH 20V 1.75A 6-Pin SC-89 T/R - Tape and Reel (Alt: SI1077X-T1-GE3)
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    Avnet Americas SI1077X-T1-GE3 Reel 6 Weeks 3,000
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    Mouser Electronics SI1077X-T1-GE3 21,059
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    Verical SI1077X-T1-GE3 6,000 3,000
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    Newark SI1077X-T1-GE3 Cut Tape 165 5
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    SI1077X-T1-GE3 Reel 3,000
    • 1 $0.168
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    Bristol Electronics SI1077X-T1-GE3 50,988
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    Quest Components SI1077X-T1-GE3 40,790
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    TME SI1077X-T1-GE3 1
    • 1 $0.422
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    Avnet Asia SI1077X-T1-GE3 8 Weeks 3,000
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    Chip One Stop SI1077X-T1-GE3 Cut Tape 85
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    EBV Elektronik SI1077X-T1-GE3 7 Weeks 3,000
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    SI1077X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1077X-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V SC89-6 Original PDF

    SI1077X Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    s12308

    Abstract: No abstract text available
    Text: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V


    Original     		Si1077X SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s12308 PDF

    si1077

    Abstract: SOT-563
    Text: Si1077X Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.078 at VGS = - 4.5 V - 1.4 0.098 at VGS = - 2.5 V -1 0.130 at VGS = - 1.8 V -1 0.188 at VGS = - 1.5 V - 0.3 TrenchFET Power MOSFET Typical ESD Performance 2500 V


    Original     		Si1077X SC-89 Si1077X-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 si1077 SOT-563 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1077X-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si1077X-GE3 AN609, 2606u 5499m 2910m 27-Nov-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406 PDF