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    SI2367DS Price and Stock

    Vishay Siliconix SI2367DS-T1-GE3

    MOSFET P-CH 20V 3.8A SOT23-3
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    DigiKey SI2367DS-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SI2367DS-T1-GE3 3,000 1
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    Vishay Siliconix SI2367DS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI2367DS-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI2367DS-T1-GE3

    Trans MOSFET P-CH 20V 3.8A 3-Pin SOT-23 T/R
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    Arrow Electronics SI2367DS-T1-GE3 3,000 8 Weeks 3,000
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    Verical SI2367DS-T1-GE3 3,000 3,000
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    Avnet Americas SI2367DS-T1-GE3 Reel 8 Weeks 3,000
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    Newark SI2367DS-T1-GE3 Cut Tape 7,703 5
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    SI2367DS-T1-GE3 Reel 3,000
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    Mouser Electronics SI2367DS-T1-GE3 3,361
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    Quest Components SI2367DS-T1-GE3 113
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    SI2367DS-T1-GE3 113
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    TTI SI2367DS-T1-GE3 Reel 3,000
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    TME SI2367DS-T1-GE3 1
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    Avnet Asia SI2367DS-T1-GE3 10 Weeks 3,000
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    Chip1Stop SI2367DS-T1-GE3 Cut Tape 34
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    EBV Elektronik SI2367DS-T1-GE3 9 Weeks 3,000
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    Vishay Intertechnologies SI2367DS-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI2367DS-T1-BE3)
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    Avnet Americas SI2367DS-T1-BE3 Reel 17 Weeks 3,000
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    Newark SI2367DS-T1-BE3 Bulk 3,000
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    Mouser Electronics SI2367DS-T1-BE3 69,698
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    TTI SI2367DS-T1-BE3 Reel 3,000
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    EBV Elektronik SI2367DS-T1-BE3 18 Weeks 3,000
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    Others SI2367DST1GE3

    AVAILABLE EU
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    ComSIT Distribution SI2367DST1GE3 3,000
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    Find more SI2367DS price and stock on Findchips.com

    SI2367DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2367DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.8A SOT-23 Original PDF

    SI2367DS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2367DS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si2367DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si2367DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		Si2367DS 18-Jul-08 PDF

    SI2367DS

    Abstract: No abstract text available
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		Si2367DS 2002/95/EC O-236 OT-23) Si2367DS-T1-GE3 11-Mar-11 PDF

    Si2367DS

    Abstract: H7 MARKING
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 18-Jul-08 H7 MARKING PDF

    si2367

    Abstract: h7 sot23 diode SI2367DS SI236
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)d 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		Si2367DS 2002/95/EC O-236 OT-23) Si2367DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2367 h7 sot23 diode SI236 PDF

    5506

    Abstract: AN609 Si2367DS
    Text: Si2367DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si2367DS AN609, 21-Jul-09 5506 AN609 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2367DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)d VDS (V) RDS(on) (Ω) 0.066 at VGS = - 4.5 V - 3.8 - 20 0.086 at VGS = - 2.5 V - 3.3 0.130 at VGS = - 1.8 V - 2.7 Qg (Typ.) 9 nC TO-236 (SOT-23) G • Halogen-free According to IEC 61249-2-21


    Original     		Si2367DS O-236 OT-23) 2002/95/EC Si2367DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF