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Vishay Siliconix SI4048DY-T1-GE3 MOSFET N-CH 30V 19.3A 8SO
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	SI4048DY-T1-GE3	Digi-Reel			1	1 $0.5 10 $0.5 100 $0.5 1000 $0.5 10000 $0.5	Buy Now
Vishay Intertechnologies SI4048DYT1GE3 N-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 19.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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ComSIT USA	SI4048DYT1GE3		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4048 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4048DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 19.3A 8SOIC		Original	PDF

SI4048 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Si4048DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0085 at VGS = 10 V 19.3 0.0105 at VGS = 4.5 V 17.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4048DY 2002/95/EC Si4048DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si4048 Abstract: Si4048DY Text: Si4048DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0085 at VGS = 10 V 19.3 0.0105 at VGS = 4.5 V 17.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4048DY 2002/95/EC Si4048DY-T1-GE3 18-Jul-08 si4048	PDF
66822 Abstract: 78303 si4048 Text: Si4048DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si4048DY AN609, 2792m 1989m 4528m 3513u 3370m 1471m 7777m 66822 78303 si4048	PDF
Untitled Abstract: No abstract text available Text: Si4048DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0085 at VGS = 10 V 19.3 0.0105 at VGS = 4.5 V 17.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4048DY 2002/95/EC Si4048DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: Si4048DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0085 at VGS = 10 V 19.3 0.0105 at VGS = 4.5 V 17.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4048DY 2002/95/EC Si4048DY-T1-GE3 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4048DY Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4048DY 18-Jul-08	PDF
si4048 Abstract: No abstract text available Text: Si4048DY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0085 at VGS = 10 V 19.3 0.0105 at VGS = 4.5 V 17.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si4048DY 2002/95/EC Si4048DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4048	PDF
Untitled Abstract: No abstract text available Text: LTC4229 Ideal Diode and Hot Swap Controller Features Description Ideal Diode and Inrush Current Control for Redundant Supplies n Low Loss Replacement for Power Schottky Diode n Protects Output Voltage from Input Brownouts n Allows Safe Hot Swapping from a Live Backplane	Original	LTC4229 24-Lead MSOP-16 DFN-16 LTC4353 LTC4355 SO-16, DFN-14 MSOP-16 LTC4357	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF