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Vishay Intertechnologies SI4427DY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI4427DY		2,153			1 $9.75 10 $9.75 100 $9.75 1000 $4.875 10000 $4.875	Buy Now

SI4427DY Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si4427DY		Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET		Original	PDF
SI4427DY		Vishay Siliconix	P-Channel 30-V (D-S) MOSFET		Original	PDF
Si4427DY SPICE Device Model		Vishay	P-Channel 30-V (D-S) MOSFET		Original	PDF
SI4427DY-T1		Vishay Intertechnology	P-Channel 30-V (D-S) MOSFET		Original	PDF

SI4427DY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Si4427BDY-T1-E3 Abstract: Si4427BDY-E3 Si4427BDY Si4427BDY-T1 Si4427DY Si4427DY-T1 Text: Specification Comparison Vishay Siliconix Si4427BDY vs. Si4427DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4427BDY Replaces Si4427DY Si4427BDY-E3 (Lead (Pb)-free version) Replaces Si4427DY Si4427BDY-T1 Replaces Si4427DY-T1	Original	PDF	Si4427BDY Si4427DY Si4427BDY-E3 Si4427BDY-T1 Si4427DY-T1 Si4427BDY-T1-E3
Si4427DY Abstract: 71488 Text: SPICE Device Model Si4427DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si4427DY 13-Apr-01 71488
Untitled Abstract: No abstract text available Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1	Original	PDF	Si4427DY Si4427DY-T1 08-Apr-05
71488 Abstract: Si4427DY Text: SPICE Device Model Si4427DY P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse	Original	PDF	Si4427DY 71488
71308 Abstract: Si4427DY Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G	Original	PDF	Si4427DY S-01828--Rev. 21-Aug-00 71308
Si4427DY Abstract: Si4427DY-T1 Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 FEATURES rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 D TrenchFETr Power MOSFETs S SO-8 S 1	Original	PDF	Si4427DY Si4427DY-T1 18-Jul-08
Untitled Abstract: No abstract text available Text: Si4427DY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View	Original	PDF	Si4427DY S-01828--Rev. 21-Aug-00
VN10KLS Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated	Original	PDF	Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05