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    SI4884 Price and Stock

    Vishay Siliconix SI4884BDY-T1-E3

    MOSFET N-CH 30V 16.5A 8SO
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    DigiKey SI4884BDY-T1-E3 Digi-Reel 1
    • 1 $0.86
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    SI4884BDY-T1-E3 Cut Tape
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    RS SI4884BDY-T1-E3 Bulk 2,500
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    Vishay Siliconix SI4884BDY-T1-GE3

    MOSFET N-CH 30V 16.5A 8SO
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    Vishay Intertechnologies SI4884BDY-T1-E3

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    Bristol Electronics SI4884BDY-T1-E3 7,500
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    SI4884BDY-T1-E3 2,398
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    Quest Components SI4884BDY-T1-E3 6,000
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    SI4884BDY-T1-E3 1,323
    • 1 $2.912
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    SI4884BDY-T1-E3 580
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    Vishay Siliconix SI4884DY-T1

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    Bristol Electronics SI4884DY-T1 2,479
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    Quest Components SI4884DY-T1 1,004
    • 1 $2.66
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    • 1000 $0.8313
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    Vishay Intertechnologies SI4884BDY-T1-GE3

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    Bristol Electronics SI4884BDY-T1-GE3 2,421
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    Find more SI4884 price and stock on Findchips.com

    SI4884 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4884 Philips Semiconductors Logic Level FET Original PDF
    SI4884BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4884BDY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI4884BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF
    SI4884BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 16.5A 8-SOIC Original PDF
    SI4884DY Fairchild Semiconductor Single N-Channel Logic Level PWM Optimized PowerTr Original PDF
    Si4884DY National Semiconductor N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Original PDF
    SI4884DY Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4884DY Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4884DY_NL Fairchild Semiconductor Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET Original PDF
    Si4884DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4884DY-T1 Vishay Intertechnology N-Channel Reduced Qg, Fast Switching MOSFET Original PDF

    SI4884 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S99-041

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original     		PDF Si4884DY S99-041--Rev. 04-Oct-99 S99-041

    Si4884DY

    Abstract: Si4884DY-T1
    Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY


    Original     		PDF Si4884DY Si4884DY-T1 08-Apr-05

    SI4884

    Abstract: MS-012AA
    Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .


    Original     		PDF SI4884 M3D315 SI4884 OT96-1 OT96-1, MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 18-Jul-08

    Si4884BDY-T1-E3

    Abstract: Si4884DY-T1-E3 Si4884BDY Si4884DY Si4884DY-T1 MOSFET 074 73504
    Text: Specification Comparison Vishay Siliconix Si4884BDY vs. Si4884DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4884BDY-T1-E3 Replaces Si4884DY-T1-E3 Si4884BDY-T1-E3 Replaces Si4884DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4884BDY Si4884DY Si4884BDY-T1-E3 Si4884DY-T1-E3 Si4884DY-T1 MOSFET 074 73504

    74648

    Abstract: 49155 SILICONIX* 9953 AN609 Si4884BDY
    Text: Si4884BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4884BDY AN609 01-Jun-07 74648 49155 SILICONIX* 9953

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 25Impedance, S-61089-Rev. 19-Jun-06

    Si4884BDY

    Abstract: Si4884BDY-T1
    Text: Si4884BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0090 @ VGS = 10 V 16.5 0.012 @ VGS = 4.5 V 13.2 VDS (V) 30 Qg (Typ) D TrenchFETr Power MOSFET D PWM Optimized RoHS COMPLIANT 10 5 nC 10.5 SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1--E3 08-Apr-05 Si4884BDY-T1

    Untitled

    Abstract: No abstract text available
    Text: SI4884 TrenchMOS logic level FET Rev. 01 — 15 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI4884 in SOT96-1 SO8 .


    Original     		PDF SI4884 M3D315 SI4884 OT96-1 OT96-1, MBK187 MBB076

    Si4884DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		PDF Si4884DY 18-Jul-08

    74127

    Abstract: Si4884BDY
    Text: SPICE Device Model Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4884BDY 18-Jul-08 74127

    Si4884DY

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS


    Original     		PDF Si4884DY 17-May-04

    Untitled

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original     		PDF Si4884DY S99-041--Rev. 04-Oct-99

    si4884dy

    Abstract: No abstract text available
    Text: Si4884DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V "12 0.0165 @ VGS = 4.5 V "10 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S


    Original     		PDF Si4884DY S-61804--Rev. 21-Jun-99

    SI4884DY

    Abstract: No abstract text available
    Text: SPICE Device Model SI4884DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Sub-circuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range


    Original     		PDF SI4884DY SI4884DY

    Si4884DY

    Abstract: SOIC-16
    Text: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original     		PDF Si4884DY SOIC-16

    Si4884DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4884DY 17-Apr-01

    Si4884DY

    Abstract: Si4884DY-T1
    Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY


    Original     		PDF Si4884DY Si4884DY-T1 18-Jul-08

    F011

    Abstract: F63TNR F852 L86Z Si4884DY SOIC-16 ECT 1C
    Text: January 2001 Si4884DY Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional


    Original     		PDF Si4884DY F011 F63TNR F852 L86Z SOIC-16 ECT 1C

    Si4884BDY

    Abstract: Si4884BDY-T1-E3
    Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • PWM Optimized


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 Si4884BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4884DY

    Abstract: Si4884DY-T1
    Text: Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0105 @ VGS = 10 V 12 0.0165 @ VGS = 4.5 V 10 D D D D SO-8 S S S G 8 D 2 7 D 3 6 D 4 5 D 1 G N-Channel MOSFET Top View Ordering Information: Si4884DY


    Original     		PDF Si4884DY Si4884DY-T1 S-03950--Rev. 26-May-03

    Untitled

    Abstract: No abstract text available
    Text: Si4884BDY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0090 at VGS = 10 V 16.5 0.012 at VGS = 4.5 V 13.2 • TrenchFET Power MOSFET • PWM Optimized Qg (Typ) RoHS COMPLIANT 10.5 nC SO-8


    Original     		PDF Si4884BDY Si4884BDY-T1-E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: _ Si4884DY VISHAY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY Vd s V r DS(on) (£2) I d (A ) 0.0105 @ VGS = 10 V ±12 0.0165 @ VGS = 4.5 V ±10 oS 30 D D D D S O -8 A B S O LU TE M A X IM U M RA TIN G S (TA = 2 5 C U N LE S S O TH E R W IS E NO TED)


    OCR Scan     		PDF Si4884DY S2SM735 DD17flflT