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Vishay Siliconix SI5471DC-T1-GE3 MOSFET P-CH 20V 6A 1206-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI5471DC-T1-GE3	Reel	14,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.28279	Buy Now
New Advantage Corporation	SI5471DC-T1-GE3		3,000		1	1 - 10 - 100 - 1000 - 10000 $0.2894	Buy Now
Vishay Intertechnologies SI5471DC-T1-GE3 P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI5471DC-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI5471DC-T1-GE3	Reel		18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.2337	Buy Now
Mouser Electronics	SI5471DC-T1-GE3		69,924			1 $0.59 10 $0.517 100 $0.373 1000 $0.293 10000 $0.237	Buy Now
Verical	SI5471DC-T1-GE3		27,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1304	Buy Now
	SI5471DC-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.4949	Buy Now
	SI5471DC-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.3846	Buy Now
	SI5471DC-T1-GE3		2,400		24	1 - 10 - 100 $0.2671 1000 $0.2551 10000 $0.2551	Buy Now
Arrow Electronics	SI5471DC-T1-GE3		27,000	18 Weeks	3,000	1 $0.2276 10 $0.2276 100 $0.2276 1000 $0.2276 10000 $0.1304	Buy Now
	SI5471DC-T1-GE3		3,000	18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.2692	Buy Now
	SI5471DC-T1-GE3	Cut Strips	2,400	18 Weeks	1	1 $0.3031 10 $0.293 100 $0.2671 1000 $0.2551 10000 $0.2551	Buy Now
Newark	SI5471DC-T1-GE3	Cut Tape	1,939		1	1 $0.662 10 $0.585 100 $0.442 1000 $0.442 10000 $0.442	Buy Now
	SI5471DC-T1-GE3	Reel			3,000	1 $0.335 10 $0.335 100 $0.335 1000 $0.335 10000 $0.303	Buy Now

TTI	SI5471DC-T1-GE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.247	Buy Now
Avnet Asia	SI5471DC-T1-GE3			20 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI5471DC-T1-GE3			19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI5471DC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI5471DC-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A 1206-8		Original	PDF

SI5471DC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5471DC 2002/95/EC Si5471DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
65043 Abstract: 9852 AN609 Text: Si5471DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si5471DC AN609, 02-Jun-09 65043 9852 AN609	PDF
Si5471DC Abstract: No abstract text available Text: SPICE Device Model Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	Si5471DC 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5471DC 2002/95/EC Si5471DC-T1-GE3 11-Mar-11	PDF
DM 0365 R Abstract: DM 0365 SI5471DC-T1-GE3 1206-8 SI5471DC si5471 Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5471DC 2002/95/EC Si5471DC-T1-GE3 18-Jul-08 DM 0365 R DM 0365 1206-8 SI5471DC si5471	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si5471DC www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the	Original	Si5471DC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si5471 Abstract: AN811 Si5471DC Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5471DC 2002/95/EC Si5471DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si5471 AN811	PDF
Untitled Abstract: No abstract text available Text: New Product Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.020 at VGS = - 4.5 V -6 0.028 at VGS = - 2.5 V -6 0.062 at VGS = - 1.8 V -6 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si5471DC 2002/95/EC Si5471DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
Si7141 Abstract: SiA447DJ SI7615A Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF
SI4497 Abstract: No abstract text available Text: V is h ay I n t e rt e c h n olo g y, I n c . Power MOSFETs Key features and Benefits • Lowest on-resistance per area achieved for a p-channel provides on-resistance down to half of previous industry best • Down to sub 2 mΩ in SO-8 footprint area • Variety of package sizes, from PowerPAK SO-8 down to 1.6 mm x 1.6 mm	Original	SC-75 VMN-PT0197-1006 SI4497	PDF

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SI5471DC Search Results

SI5471DC Price and Stock

Vishay Siliconix SI5471DC-T1-GE3

Vishay Intertechnologies SI5471DC-T1-GE3

SI5471DC Datasheets (1)

SI5471DC Datasheets Context Search

Untitled

65043

Si5471DC

Untitled

DM 0365 R

Untitled

si5471

Untitled

Arduino Mega2560

Si7141

si7121

Diode SOT-23 marking 15d

SI4497