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    SI5935CDC Search Results

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    SI5935CDC Price and Stock

    Vishay Siliconix SI5935CDC-T1-GE3

    MOSFET 2P-CH 20V 4A 1206-8
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    DigiKey SI5935CDC-T1-GE3 Digi-Reel 4,070 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
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    SI5935CDC-T1-GE3 Cut Tape 4,070 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
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    SI5935CDC-T1-GE3 Reel 3,000 3,000
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    RS SI5935CDC-T1-GE3 Bulk 20
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    New Advantage Corporation SI5935CDC-T1-GE3 12,000 1
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    Vishay Siliconix SI5935CDC-T1-E3

    MOSFET 2P-CH 20V 4A 1206-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI5935CDC-T1-E3 Digi-Reel 2,817 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
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    SI5935CDC-T1-E3 Cut Tape 2,817 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
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    SI5935CDC-T1-E3 Reel 3,000
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    Vishay Intertechnologies SI5935CDC-T1-GE3

    DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI5935CDC-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI5935CDC-T1-GE3 Reel 3,000 18 Weeks 3,000
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    Mouser Electronics SI5935CDC-T1-GE3 21,294
    • 1 $0.64
    • 10 $0.486
    • 100 $0.322
    • 1000 $0.225
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    Verical SI5935CDC-T1-GE3 3,000 3,000
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    Arrow Electronics SI5935CDC-T1-GE3 3,000 18 Weeks 3,000
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    Newark SI5935CDC-T1-GE3 Reel 3,000
    • 1 $0.212
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    • 1000 $0.212
    • 10000 $0.191
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    SI5935CDC-T1-GE3 Cut Tape 3,000
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    TTI SI5935CDC-T1-GE3 Reel 6,000 3,000
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    TME SI5935CDC-T1-GE3 1
    • 1 $0.442
    • 10 $0.376
    • 100 $0.295
    • 1000 $0.242
    • 10000 $0.233
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    Avnet Asia SI5935CDC-T1-GE3 9,000 23 Weeks 3,000
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    EBV Elektronik SI5935CDC-T1-GE3 22 Weeks 3,000
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    Vishay Intertechnologies SI5935CDC-T1-E3

    DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI5935CDC-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI5935CDC-T1-E3 Reel 18 Weeks 3,000
    • 1 -
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    Mouser Electronics SI5935CDC-T1-E3 2,764
    • 1 $0.53
    • 10 $0.414
    • 100 $0.282
    • 1000 $0.2
    • 10000 $0.151
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    TTI SI5935CDC-T1-E3 Reel 9,000 3,000
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    • 10000 $0.156
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    Vishay Intertechnologies SI5935CDCT1GE3

    DUAL P-CHANNEL 20 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI5935CDCT1GE3 47,750
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    Find more SI5935CDC price and stock on Findchips.com

    SI5935CDC Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI5935CDC-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4A 1206-8 Original PDF
    SI5935CDC-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4A 1206-8 Original PDF

    SI5935CDC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code DK

    Abstract: SI5935CDC
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 Si5935CDC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code DK

    SI5935CDC

    Abstract: No abstract text available
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI5935CDC-T1-E3

    Abstract: Si5935CDC
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 a RDS(on) (Ω) ID (A) 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 Qg (Typ.) 6.2 nC • TrenchFET Power MOSFETs • 100 % Rg Tested


    Original     		PDF Si5935CDC Si5935CDC-T1-E3 18-Jul-08

    4392 mosfet

    Abstract: 4392 MOSfet 4392 Si5935CDC AN609
    Text: Si5935CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si5935CDC AN609, 02-Oct-08 4392 mosfet 4392 MOSfet 4392 AN609

    Si5935CDC

    Abstract: S8288
    Text: SPICE Device Model Si5935CDC Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si5935CDC 18-Jul-08 S8288

    SI5935CDC-T1-E3

    Abstract: SI5935CDC
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 18-Jul-08

    SI5935CDC-T1-E3

    Abstract: SI5935CDC Si5935DC Si5935DC-T1-E3
    Text: Specification Comparison Vishay Siliconix Si5935CDC vs. Si5935DC Description: Package: Pin Out: Dual P-Channel, 20-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5935CDC-T1-E3 replaces Si5935DC-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5935CDC Si5935DC Si5935CDC-T1-E3 Si5935DC-T1-E3 27-Oct-08

    SI5935CDC

    Abstract: No abstract text available
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    MARKING CODE dk

    Abstract: SI5935CDC
    Text: Si5935CDC Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.100 at VGS = - 4.5 V - 4g 0.120 at VGS = - 2.5 V - 4g 0.156 at VGS = - 1.8 V - 3.8 VDS (V) - 20 Qg (Typ.) 6.2 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si5935CDC 2002/95/EC Si5935CDC-T1-E3 Si5935CDC-T1-GE3 11-Mar-11 MARKING CODE dk

    smd transistor m6

    Abstract: N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor
    Text: Active Cell Balancing Methods for Li-Ion Battery Management ICs using the ATA6870 ATA6870 1. Scope This application note describes methods of active battery cell balancing with the ATA6870. Application Note 2. Cell Balancing In a multi-cell battery pack, no two cells are identical. There are always slight differences in the state of charge, capacity, impedance and temperature characteristics —


    Original     		PDF ATA6870 ATA6870. 9184B smd transistor m6 N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477