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Vishay Siliconix SI7454CDP-T1-GE3 MOSFET N-CH 100V 22A PPAK SO-8
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DigiKey	SI7454CDP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI7454CDP-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI7454CDP-T1-GE3	Digi-Reel			1	1 $1.6 10 $1.6 100 $1.6 1000 $1.6 10000 $1.6	Buy Now
Vishay Intertechnologies SI7454CDP-T1-GE3
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Bristol Electronics	SI7454CDP-T1-GE3		2,430			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI7454DDP-T1-GE3 MOSFETs 100V Vds 20V Vgs PowerPAK SO-8
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TTI	SI7454DDP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.563	Buy Now

SI7454CDP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7454CDP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 22A 8-SOIC		Original	PDF

SI7454CDP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SI7454CDP-T1-GE3 Abstract: Si7454CDP Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0305 at VGS = 10 V 22 VDS (V) 100 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21	Original	Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21	Original	Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
AN609 Abstract: Si7454CDP Text: Si7454CDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si7454CDP AN609, 12-Mar-10 AN609	PDF
Si7454CDP Abstract: Si7454CDP spice Text: SPICE Device Model Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7454CDP 18-Jul-08 Si7454CDP spice	PDF
Untitled Abstract: No abstract text available Text: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21	Original	Si7454CDP 2002/95/EC Si7454CDP-T1-GE3 11-Mar-11	PDF