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Vishay Siliconix SI7456CDP-T1-GE3 MOSFET N-CH 100V 27.5A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI7456CDP-T1-GE3	Cut Tape	2,482		1	1 $2.4 10 $1.542 100 $2.4 1000 $0.77529 10000 $0.77529	Buy Now
	SI7456CDP-T1-GE3	Digi-Reel	2,482		1	1 $2.4 10 $1.542 100 $2.4 1000 $0.77529 10000 $0.77529	Buy Now
	SI7456CDP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.675	Buy Now
Vishay Intertechnologies SI7456CDP-T1-GE3 N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI7456CDP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI7456CDP-T1-GE3	Reel	6,000	27 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.6291	Buy Now
Mouser Electronics	SI7456CDP-T1-GE3		23,457			1 $1.93 10 $1.3 100 $1 1000 $0.735 10000 $0.675	Buy Now
Bristol Electronics	SI7456CDP-T1-GE3		12,700			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI7456CDP-T1-GE3		10,160			1 $2.0252 10 $2.0252 100 $2.0252 1000 $0.8354 10000 $0.7595	Buy Now
Chip One Stop	SI7456CDP-T1-GE3	Cut Tape	3,000			1 $1.56 10 $1 100 $0.81 1000 $0.805 10000 $0.743	Buy Now

EBV Elektronik	SI7456CDP-T1-GE3			28 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI7456CDP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI7456CDP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 27.5A 8-SOIC		Original	PDF

SI7456CDP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SI7456CDP Abstract: No abstract text available Text: SPICE Device Model Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si7456CDP 18-Jul-08	PDF
SI7456CDP Abstract: No abstract text available Text: New Product Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 27.5 0.0245 at VGS = 7.5 V 27 0.0315 at VGS = 4.5 V 24 VDS (V) 100 Qg (Typ.) 7.7 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	Si7456CDP 2002/95/EC Si7456CDP-T1-GE3 18-Jul-08	PDF
Untitled Abstract: No abstract text available Text: New Product Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 27.5 0.0245 at VGS = 7.5 V 27 0.0315 at VGS = 4.5 V 24 VDS (V) 100 Qg (Typ.) 7.7 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	Si7456CDP 2002/95/EC Si7456CDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
AN609 Abstract: No abstract text available Text: Si7456CDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si7456CDP AN609, 17-Mar-10 AN609	PDF
Untitled Abstract: No abstract text available Text: New Product Si7456CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0235 at VGS = 10 V 27.5 0.0245 at VGS = 7.5 V 27 0.0315 at VGS = 4.5 V 24 VDS (V) 100 Qg (Typ.) 7.7 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	Si7456CDP 2002/95/EC Si7456CDP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF