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Catalog Datasheet	MFG & Type	Document Tags	PDF
Si7662 Abstract: No abstract text available Text: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested	Original	Si7662DP Si7662DP-T1-E3 18-Jul-08 Si7662	PDF
Si7662 Abstract: Si7662DP Text: New Product Si7662DP Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) 60 0.0105 at VGS = 10 V 32g 36 nC • Extremely Low Qgd WFET Technology for Reduced dV/dt, Qgd and Shoot-Through • 100 % Rg Tested	Original	Si7662DP Si7662DP-T1-E3 08-Apr-05 Si7662	PDF
Si7662 Abstract: AN609 Text: Si7662DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si7662DP AN609 24-Jul-07 Si7662	PDF
Si7662 Abstract: Si7662DP Text: SPICE Device Model Si7662DP Vishay Siliconix N-Channel 60V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si7662DP 18-Jul-08 Si7662	PDF