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    SIHB15N60E Price and Stock

    Vishay Siliconix SIHB15N60E-GE3

    MOSFET N-CH 600V 15A D2PAK
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    DigiKey SIHB15N60E-GE3 Bulk 1,347 1
    • 1 $4.1
    • 10 $2.695
    • 100 $4.1
    • 1000 $1.44721
    • 10000 $1.4
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    Vishay Intertechnologies SIHB15N60E-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHB15N60E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHB15N60E-GE3 Reel 19 Weeks 1,000
    • 1 -
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    • 1000 $1.4
    • 10000 $1.31765
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    Mouser Electronics SIHB15N60E-GE3 2,550
    • 1 $3
    • 10 $2.37
    • 100 $1.73
    • 1000 $1.4
    • 10000 $1.4
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    Newark SIHB15N60E-GE3 Bulk 1
    • 1 $3.26
    • 10 $2.78
    • 100 $2.3
    • 1000 $2.07
    • 10000 $2.07
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    TTI SIHB15N60E-GE3 Tube 4,000 1,000
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    • 1000 $1.4
    • 10000 $1.4
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    TME SIHB15N60E-GE3 1
    • 1 $2.85
    • 10 $2.57
    • 100 $2.04
    • 1000 $1.91
    • 10000 $1.91
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    EBV Elektronik SIHB15N60E-GE3 20 Weeks 50
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    Vishay Intertechnologies SIHB15N60EGE3

    POWER MOSFET Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHB15N60EGE3 900
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    SIHB15N60E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB15N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 15A DPAK Original PDF

    SIHB15N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17


    Original     		PDF SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V 0.28 Qg max. (nC)


    Original     		PDF SiHB15N60E 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17


    Original     		PDF SiHB15N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17


    Original     		PDF SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit (FOM) Ron x Qg 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17


    Original     		PDF SiHB15N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Low Figure-of-Merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) 76 Qgs (nC) 11 Qgd (nC) • • • • • 0.28 17


    Original     		PDF SiHB15N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB15N60E AN609, 8840m 5543m 8538m 0989m 19-Mar-15

    Untitled

    Abstract: No abstract text available
    Text: SiHB15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Low figure-of-merit (FOM) Ron x Qg 650 VGS = 10 V Qg max. (nC) • • • • • 0.28 78 Qgs (nC) 9 Qgd (nC) 17 Configuration


    Original     		PDF SiHB15N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer 家庭用電化製品 エアコン 4 IH調理器 5 洗濯機 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF VMN-MS6792-1304-CNCH

    Untitled

    Abstract: No abstract text available
    Text: COMPONENTS FOR THE INTERNET OF THINGS Touching the Human Body In the Home VISHAY and the INTERNET of THINGS IoT Vishay has stepped up to the challenges of the Internet of Things (IoT) with a broad portfolio of unique passive and active solutions. These best-in-class components are optimally suited for the “Things” being


    Original     		PDF VMN-MS6975-1502

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / January 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: [email protected] 500 V High-Voltage MOSFETs Built on Gen II Super Junction Technology Feature Extremely Low Conduction and Switching Losses Product Benefits:


    Original     		PDF O-220, O-252, O-263, O-247AC, O-220 SiHB12N50E SiHA12N50E SiHP15N50E SiHB15N60E SiHA15N50E

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Consumer Home Appliances One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Home Appliances Air Conditioners Induction Cooking Washing Machines 4 5 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF VMN-MS6761-1212