Untitled
Abstract: No abstract text available
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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IRF840LC,
SiHF840LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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IRF840LC,
SiHF840LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
AN609
Abstract: IRF840LC SiHF840LC
Text: IRF840LC_RC, SiHF840LC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRF840LC
SiHF840LC
AN609,
18-Mar-10
AN609
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PDF
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IRF840LCPBF
Abstract: IRF840LC SiHF840LC SiHF840LC-E3
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating
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Original
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IRF840LC,
SiHF840LC
18-Jul-08
IRF840LCPBF
IRF840LC
SiHF840LC-E3
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PDF
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IRF840LC
Abstract: SiHF840LC SiHF840LC-E3
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
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IRF840LC,
SiHF840LC
11-Mar-11
IRF840LC
SiHF840LC-E3
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PDF
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IRF840LCPBF
Abstract: No abstract text available
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
|
IRF840LC,
SiHF840LC
2002/95/EC
11-Mar-11
IRF840LCPBF
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PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss
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Original
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IRF840LCS,
IRF840LCL,
SiHF840LCS
SiHF840LCL
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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irf84
Abstract: No abstract text available
Text: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements
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Original
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IRF840L,
SiHF840L
2002/95/EC
O-262)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
irf84
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating
|
Original
|
IRF840LC,
SiHF840LC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss
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Original
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IRF840LCS,
IRF840LCL,
SiHF840LCS
SiHF840LCL
2002/95/EC
O-262)
O-263)
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating
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Original
|
IRF840LC,
SiHF840LC
12-Mar-07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements
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Original
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IRF840L,
SiHF840L
2002/95/EC
O-262)
18-Jul-08
|
PDF
|
transistor tip 1050
Abstract: No abstract text available
Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss
|
Original
|
IRF840LCS,
IRF840LCL,
SiHF840LCS
SiHF840LCL
2002/95/EC
O-262)
O-263)
11-Mar-11
transistor tip 1050
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements
|
Original
|
IRF840L,
SiHF840L
2002/95/EC
O-262)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
|
PDF
|
|
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AN609
Abstract: IRF840LCL IRF840LCS SiHF840LCL SiHF840LCS
Text: IRF840LCS_RC, IRF840LCL_RC, SiHF840LCS_RC, SiHF840LCL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
|
Original
|
IRF840LCS
IRF840LCL
SiHF840LCS
SiHF840LCL
AN609,
18-Mar-10
AN609
|
PDF
|
AN609
Abstract: IRF840L SiHF840L
Text: IRF840L_RC, SiHF840L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
|
IRF840L
SiHF840L
AN609,
18-Mar-10
AN609
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
|
Original
|
IRF840LC,
SiHF840LC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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IRF840LCL
Abstract: IRF840 IRF840LCS SiHF840LC SiHF840LCL SiHF840LCL-E3 SiHF840LCS SiHF840LCS-E3
Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
|
IRF840LCS,
IRF840LCL,
SiHF840LCS
SiHF840LCL
18-Jul-08
IRF840LCL
IRF840
IRF840LCS
SiHF840LC
SiHF840LCL-E3
SiHF840LCS-E3
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PDF
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IRF840LC
Abstract: SiHF840LC SiHF840LC-E3
Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V VGS Rating
|
Original
|
IRF840LC,
SiHF840LC
18-Jul-08
IRF840LC
SiHF840LC-E3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.85 RoHS 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling Qgd (nC) 32 • Simple Drive Requirements
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Original
|
IRF840L,
SiHF840L
O-262)
18-Jul-08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements
|
Original
|
IRF840L,
SiHF840L
2002/95/EC
O-262)
11-Mar-11
|
PDF
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IRF840LC
Abstract: IRF840LCL IRF840LCS SiHF840LC SiHF840LCL SiHF840LCL-E3 SiHF840LCS SiHF840LCS-E3 IRF840LCSTRR
Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single G G S RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve
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Original
|
IRF840LCS,
IRF840LCL,
SiHF840LCS
SiHF840LCL
18-Jul-08
IRF840LC
IRF840LCL
IRF840LCS
SiHF840LC
SiHF840LCL-E3
SiHF840LCS-E3
IRF840LCSTRR
|
PDF
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SiHF840L
Abstract: SiHF840L-E3 IRF840L
Text: IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.85 Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling Qgd (nC) 32
|
Original
|
IRF840L,
SiHF840L
O-262)
18-Jul-08
SiHF840L-E3
IRF840L
|
PDF
|
transistor tip 1050
Abstract: No abstract text available
Text: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss
|
Original
|
IRF840LCS,
IRF840LCL,
SiHF840LCS
SiHF840LCL
2002/95/EC
O-262)
O-263)
2011/65/EU
2002/95/EC.
2002/95/EC
transistor tip 1050
|
PDF
|
