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Vishay Siliconix SIR644DP-T1-GE3 MOSFET N-CH 40V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIR644DP-T1-GE3	Digi-Reel			1	1 $1.3 10 $1.3 100 $1.3 1000 $1.3 10000 $1.3	Buy Now
	SIR644DP-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SIR644DP-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIR644DP-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIR644DP-T1-GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIR644DP-T1-GE3		2,400			1 $2.2 10 $2.2 100 $2.2 1000 $0.9075 10000 $0.825	Buy Now
	SIR644DP-T1-GE3		2,400			1 $2.2 10 $2.2 100 $2.2 1000 $0.9075 10000 $0.825	Buy Now

SIR644DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIR644DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A SO-8		Original	PDF

SIR644DP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: SiR644DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0027 at VGS = 10 V 60 0.0040 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 21.3 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification • DC/DC Converters	Original	SiR644DP SiR644DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SiR644DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0027 at VGS = 10 V 60 0.0040 at VGS = 4.5 V 60 VDS (V) 40 Qg (Typ.) 21.3 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification • DC/DC Converters	Original	SiR644DP SiR644DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SiR644DP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	SiR644DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs 40 V, 60 V, and 80 V TrenchFET Gen IV Higher Efficiency and Power Density with Low RDS on and Excellent Dynamic Characteristics KEY BENEFITS • Reduce power loss from conduction with 40 % lower RDS(on) than previous-generation device. 60 V MOSFETs	Original	O-263) Si4038DY SiS488DN SUM50020EL SUP50020EL SiR662DP SiR688DP SiR664DP SiJ462DP SiS862DN	PDF
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs	PDF