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    SIRA02DP Price and Stock

    Vishay Siliconix SIRA02DP-T1-GE3

    MOSFET N-CH 30V 50A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA02DP-T1-GE3 Digi-Reel 7,498 1
    • 1 $2.5
    • 10 $1.607
    • 100 $2.5
    • 1000 $0.81159
    • 10000 $0.81159
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    SIRA02DP-T1-GE3 Cut Tape 7,498 1
    • 1 $2.5
    • 10 $1.607
    • 100 $2.5
    • 1000 $0.81159
    • 10000 $0.81159
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    SIRA02DP-T1-GE3 Reel 3,000 3,000
    • 1 -
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    • 10000 $0.7125
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    RS SIRA02DP-T1-GE3 Bulk 3,000
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    • 10000 $1.84
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    Vishay Intertechnologies SIRA02DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA02DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIRA02DP-T1-GE3 Reel 17 Weeks 3,000
    • 1 -
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    • 10000 $0.70111
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    Mouser Electronics SIRA02DP-T1-GE3 4,906
    • 1 $1.67
    • 10 $1.2
    • 100 $0.931
    • 1000 $0.777
    • 10000 $0.712
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    Arrow Electronics SIRA02DP-T1-GE3 Cut Strips 4 17 Weeks 1
    • 1 $0.7309
    • 10 $0.7309
    • 100 $0.7309
    • 1000 $0.7309
    • 10000 $0.7309
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    Newark SIRA02DP-T1-GE3 Reel 3,000
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    • 10000 $0.73
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    Bristol Electronics SIRA02DP-T1-GE3 4,002
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    Quest Components SIRA02DP-T1-GE3 3,201
    • 1 $2.28
    • 10 $2.28
    • 100 $2.28
    • 1000 $0.9405
    • 10000 $0.855
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    TTI SIRA02DP-T1-GE3 Reel 3,000
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    • 10000 $0.713
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    TME SIRA02DP-T1-GE3 1
    • 1 $1.45
    • 10 $1.3
    • 100 $1.03
    • 1000 $0.97
    • 10000 $0.97
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    EBV Elektronik SIRA02DP-T1-GE3 21 Weeks 3,000
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    SIRA02DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA02DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A SO-8 Original PDF

    SIRA02DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA02DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiRA02DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00200 at VGS = 10 V 50 0.00270 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA02DP SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA02DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiRA02DP AN609, 1877m 0935u 1831m 4292u 2011m 5941m 6543m 13-Jan-12

    sira

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sira

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8


    Original     		PDF SiRA02DP 2002/95/EC SiRA02DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications Telecommunications Infrastructure Transmitters, Base Stations


    Original     		PDF AEC-Q101 VMN-MS6761-1212

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		PDF VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications テレコミュニケーション・ インフラ


    Original     		PDF AEC-Q101 VMN-MS6792-1304-TETI

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs