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    Vishay Siliconix SIS472DN-T1-GE3

    MOSFET N-CH 30V 20A PPAK1212-8
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    DigiKey SIS472DN-T1-GE3 Cut Tape 17,600 1
    • 1 $1.09
    • 10 $0.679
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    • 1000 $0.31153
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    SIS472DN-T1-GE3 Digi-Reel 17,600 1
    • 1 $1.09
    • 10 $0.679
    • 100 $1.09
    • 1000 $0.31153
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    SIS472DN-T1-GE3 Reel 15,000 3,000
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    • 10000 $0.225
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    Vishay Intertechnologies SIS472DN-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS472DN-T1-GE3)
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    Avnet Americas SIS472DN-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SIS472DN-T1-GE3 3,000
    • 1 $0.68
    • 10 $0.565
    • 100 $0.389
    • 1000 $0.283
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    Bristol Electronics SIS472DN-T1-GE3 3,986
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    Quest Components SIS472DN-T1-GE3 3,188
    • 1 $0.9
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    • 1000 $0.36
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    TTI SIS472DN-T1-GE3 Reel 3,000
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    TME SIS472DN-T1-GE3 1
    • 1 $0.749
    • 10 $0.542
    • 100 $0.431
    • 1000 $0.388
    • 10000 $0.388
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    SIS472DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS472DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 20A 1212-8 Original PDF

    SIS472DN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SiS472DN

    Abstract: SIS472DN-T1-GE3
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS472DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiS472DN AN609, 9144u 6067m 9348m 1698m 7753m 3781u 5039u PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS472DN 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SIS472DN-T1-GE3

    Abstract: No abstract text available
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiS472DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, g 0.0089 at VGS = 10 V 20 0.0124 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 9.8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		SiS472DN 2002/95/EC SiS472DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Telecommunications Mobile One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications Mobile Smartphones 4 Wireless Modems 5 Wireless Charging 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		VMN-MS6761-1212 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Telecommunications Mobile One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications モバイル コミュニケーション スマートフォン 4 ワイヤレスモデム 5


    Original     		VMN-MS6792-1304-TETM PDF