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    SIZ342DT Price and Stock

    Vishay Siliconix SIZ342DT-T1-GE3

    MOSFET 2N-CH 30V 15.7A 8PWR33
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIZ342DT-T1-GE3 Digi-Reel 9,104 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
    • 10000 $0.42911
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    SIZ342DT-T1-GE3 Cut Tape 9,104 1
    • 1 $1.44
    • 10 $0.907
    • 100 $1.44
    • 1000 $0.42911
    • 10000 $0.42911
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    SIZ342DT-T1-GE3 Reel 6,000 3,000
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    • 10000 $0.37562
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    New Advantage Corporation SIZ342DT-T1-GE3 6,000 1
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    • 10000 $0.4502
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    Vishay Intertechnologies SIZ342DT-T1-GE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIZ342DT-T1-GE3)
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    Avnet Americas SIZ342DT-T1-GE3 Reel 6,000
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    Newark SIZ342DT-T1-GE3 Cut Tape 5,502 1
    • 1 $0.961
    • 10 $0.796
    • 100 $0.636
    • 1000 $0.636
    • 10000 $0.636
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    SIZ342DT-T1-GE3 Reel 6,000
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    TME SIZ342DT-T1-GE3 3,000
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    Avnet Asia SIZ342DT-T1-GE3 24 Weeks 6,000
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    Chip Stock SIZ342DT-T1-GE3 103,488
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    EBV Elektronik SIZ342DT-T1-GE3 17 Weeks 3,000
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    Vishay Intertechnologies SIZ342DT-T1-GE3-A

    VISSIZ342DT-T1-GE3-A DUAL N-CHANNEL 30-V (Alt: SIZ342DT-T1-GE3-A)
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    Avnet Asia SIZ342DT-T1-GE3-A 22 Weeks 6,000
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    SIZ342DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIZ342DT-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET DL N-CH 30V POWERPAIR3X3 Original PDF

    SIZ342DT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiZ342DT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


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    PDF SiZ342DT AN609, MOD34 03-Nov-14

    Untitled

    Abstract: No abstract text available
    Text: SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0111 at VGS = 10 V 30 a 0.0138 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: For definitions of


    Original
    PDF SiZ342DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    S15018-1

    Abstract: No abstract text available
    Text: SPICE Device Model SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF SiZ342DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 S15018-1

    Untitled

    Abstract: No abstract text available
    Text: SiZ342DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Channel-1 and Channel-2 30 RDS(on) (Ω) MAX. ID (A) 0.0115 at VGS = 10 V 30 a 0.0153 at VGS = 4.5 V 27.5 Qg (Typ.) 4.5 nC • Material categorization: for definitions of


    Original
    PDF SiZ342DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in


    Original
    PDF SiZ340DT SiZ342DT VMN-MS6927-1406