SMD TRANSISTOR F3 65 Search Results

SMD TRANSISTOR F3 65 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SMD TRANSISTOR F3 65 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
716296 Abstract: 6 PIN SMD IC FOR SMPS f3 double diode smd 1812B104K501 Finepower 716296 ICE3A0365 smd diode p80 650V-CoolMOS pin SMD IC FOR SMPS circuits zener diode 6w Text: Application Note, V1.1, Apr 2006 AN-EVALM-ICE3A0365 6W 12.5V SMPS Evaluation Board with CoolSETTM F3 ICE3A0365 CoolBIAS-F3 Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2006-04-11 Published by Infineon Technologies Asia Pacific, 168 Kallang Way,	Original	PDF	AN-EVALM-ICE3A0365 ICE3A0365 herein9102 ICE3A0365 ICE3B0565" 716296 6 PIN SMD IC FOR SMPS f3 double diode smd 1812B104K501 Finepower 716296 smd diode p80 650V-CoolMOS pin SMD IC FOR SMPS circuits zener diode 6w
dynamic ram binary cell Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of	Original	PDF	HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
JST SOT-23 Abstract: smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72 Text: BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W 100PPM PACK. 0805	Original	PDF	STEVAL-ISS001V1 BAS16 100PPM JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR 103 resistor pack diode zener c55 2Y DIODE SMD DIODE SMD J9 transistor c114 diode zener c72
SMD TRANSISTOR L6 Abstract: transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor Text: BOM STEVAL-ISS001V2 PART TYPE QUANT ITY QTY DESIGNATOR D3, D4, D5, D6, D7, D8, D9, D10, D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155	Original	PDF	STEVAL-ISS001V2 BAS16 100PPM 330UH 12X9MM UBB-4R-D10T-1 SMD TRANSISTOR L6 transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 transistor smd R55 transistor smd j6 L6 smd transistor
transistor SMD g 28 Abstract: No abstract text available Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 3 — 3 June 2014 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.	Original	PDF	BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV transistor SMD g 28
bd139 equivalent transistor Abstract: Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS Text: APPLICATION NOTE A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 AN98014 Philips Semiconductors A broadband 150 W amplifier for band IV & V TV transmitters based on the BLV862 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 TRANSISTOR DESCRIPTION	Original	PDF	BLV862 AN98014 SCA57 bd139 equivalent transistor Str W 5754 PHILIPS colour television schematic 14 diode gp 805 CIRCUIT DIAGRAM OF BD139 140 AN98014 BD139 PIN DIAGRAM 222285247104 china tv schematic diagram tv receiver schematic diagram PHILIPS
Untitled Abstract: No abstract text available Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 6 June 2013 Preliminary data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.	Original	PDF	BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV
Untitled Abstract: No abstract text available Text: BLF8G20LS-400PV; BLF8G20LS-400PGV Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.	Original	PDF	BLF8G20LS-400PV; BLF8G20LS-400PGV BLF8G20LS-400PV LS-400PGV
C5750X7R1H106M Abstract: BLF6G20LS-140 C4532X7R1H475M RF35 smd transistor equivalent table Text: BLF6G20LS-140 Power LDMOS transistor Rev. 01 — 27 February 2009 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20LS-140 BLF6G20LS-140 C5750X7R1H106M C4532X7R1H475M RF35 smd transistor equivalent table
BLF6G22LS-100 Abstract: RF35 TRANSISTOR SMD BV Text: BLF6G22LS-100 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	PDF	BLF6G22LS-100 BLF6G22LS-100 RF35 TRANSISTOR SMD BV
transistor 9575 Abstract: BLF6G10-160RN BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 01 — 20 January 2009 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN transistor 9575 BLF6G10LS-160RN RF35 w2 smd transistor smd transistor f3 65 CAPACITOR 330 NF Capacitor 27 p-F 1
BLF6G10LS-160RN Abstract: TRANSISTOR SMD BV BLF6G10-160RN RF35 nxp TRANSISTOR SMD 13 Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN BLF6G10LS-160RN TRANSISTOR SMD BV RF35 nxp TRANSISTOR SMD 13
Untitled Abstract: No abstract text available Text: BLF6G10LS-160 Power LDMOS transistor Rev. 01 — 29 September 2008 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10LS-160 BLF6G10LS-160
D2375 Abstract: BLF6G10S-45 RF35 Text: BLF6G10S-45 UHF power LDMOS transistor Rev. 01 — 23 February 2007 Preliminary data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10S-45 BLF6G10S-45 D2375 RF35

Untitled Abstract: No abstract text available Text: BLF6G10-160RN; BLF6G10LS-160RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	PDF	BLF6G10-160RN; BLF6G10LS-160RN BLF6G10-160RN 10LS-160RN
RF35 Abstract: BLF6G10S-45 TRANSISTOR SMD CODE 6.8 smd transistor f3 65 Text: BLF6G10S-45 Power LDMOS transistor Rev. 02 — 10 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G10S-45 BLF6G10S-45 RF35 TRANSISTOR SMD CODE 6.8 smd transistor f3 65
d2375 Abstract: BLF6G10S-45 RF35 Text: BLF6G10S-45 Power LDMOS transistor Rev. 03 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G10S-45 BLF6G10S-45 d2375 RF35
EF20 TRANSFORMER Abstract: smd transistor rc4 ICE3A1065ELJ 20kv flyback transformer 470uf, 35v electrolytic capacitor AN-EVALSF3-ICE3A1065ELJ 24V 3A SMPS circuit diagram smd schottky diode sg1 smd diode r4a 2x27mH Text: Application Note, V1.0, Sep 2008 AN-EVALSF3-ICE3A1065ELJ 15W 5.0V SMPS Evaluation Board with CoolSET F 3 I C E 3 A 1 0 6 5 E L J Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2008-09-02 Published by Infineon Technologies Asia Pacific,	Original	PDF	AN-EVALSF3-ICE3A1065ELJ ICE3A1065ELJ ICE3Axx65ELJ AN-PS0030" EF20 TRANSFORMER smd transistor rc4 20kv flyback transformer 470uf, 35v electrolytic capacitor AN-EVALSF3-ICE3A1065ELJ 24V 3A SMPS circuit diagram smd schottky diode sg1 smd diode r4a 2x27mH
smd transistor rc4 Abstract: ICE3A1065ELJ smd transistor rc4 file 20kv flyback transformer DSP-301N-S008 surge lightning to smps 24V 3A SMPS circuit diagram connecting diagram for ic 7447 AN-PS0030 MBR745 Text: Application Note, V1.1, Aug 2010 A N - E V A L 3 A 1 0 6 5 EL J 15W 5.0V SMPS Evaluation Board with CoolSET F 3 I C E 3 A 1 0 6 5 E L J Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2010-08-11 Published by Infineon Technologies Asia Pacific,	Original	PDF	ICE3A1065ELJ ICE3Axx65ELJ AN-PS0030" smd transistor rc4 smd transistor rc4 file 20kv flyback transformer DSP-301N-S008 surge lightning to smps 24V 3A SMPS circuit diagram connecting diagram for ic 7447 AN-PS0030 MBR745
TRANSISTOR j412 Abstract: J412 - TRANSISTOR SMD BLF6G38S-25 Text: BLF6G38-25; BLF6G38S-25 WiMAX power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 25 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1.	Original	PDF	BLF6G38-25; BLF6G38S-25 ACPR885k ACPR1980k IS-95 BLF6G38-25 BLF6G38S-25 TRANSISTOR j412 J412 - TRANSISTOR SMD
C4532X7R1E475M Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf Text: BLF6G22LS-130 Power LDMOS transistor Rev. 01 — 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf
transistor K 1352 Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance	Original	PDF	BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor
BLF6G20-110 Abstract: BLF6G20LS-110 RF35 Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	PDF	BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35
RF35 Abstract: Multilayer Ceramic Capacitor 10 uf TDK smd transistor F4 Text: BLF6G10-45 Power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	PDF	BLF6G10-45 BLF6G10-45 RF35 Multilayer Ceramic Capacitor 10 uf TDK smd transistor F4

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SMD TRANSISTOR F3 65 Search Results

SMD TRANSISTOR F3 65 Result Highlights (5)

SMD TRANSISTOR F3 65 Datasheets Context Search

716296

dynamic ram binary cell

JST SOT-23

SMD TRANSISTOR L6

transistor SMD g 28

bd139 equivalent transistor

Untitled

Untitled

C5750X7R1H106M

BLF6G22LS-100

transistor 9575

BLF6G10LS-160RN

Untitled

D2375

Untitled

RF35

d2375

EF20 TRANSFORMER

smd transistor rc4

TRANSISTOR j412

C4532X7R1E475M

transistor K 1352

BLF6G20-110

RF35