310DG
Abstract: FET MARKING QG 117M marking SMG2304A
Text: SMG2304A 2.5A, 30V,RDS ON 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304A utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG2304A is
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Original
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SMG2304A
SC-59
SMG2304A
01-Jun-2002
310DG
FET MARKING QG
117M marking
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PDF
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FET MARKING QG
Abstract: 117M marking 12V 1A MOSFET N-channel SMG2304 27a diode
Text: SMG2304 2.7A, 25V,RDS ON 117mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A L SC-59 Description The SMG2304 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
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Original
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SMG2304
SC-59
SMG2304
01-Jun-2002
FET MARKING QG
117M marking
12V 1A MOSFET N-channel
27a diode
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PDF
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